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Publisher: Elsevier

Volume 218, Number 2, 15 September 2000

Growth of M-plane GaN(1100) on -LiAlO2(100)
pp. 143-147(5)
Authors: Waltereit, P.; Brandt, O.; Ramsteiner, M.; Uecker, R.; Reiche, P.; Ploog, K.H.

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Growth of GaN layer by metal-organic chemical vapor deposition system with a novel three-flow reactor
pp. 148-154(7)
Authors: Wang, H.X.; Wang, T.; Mahanty, S.; Komatsu, F.; Inaoka, T.; Nishino, K.; Sakai, S.

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Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy
pp. 155-160(6)
Authors: Shen1, X.Q.; Ide, T.; Cho, S.H.; Shimizu, M.; Hara, S.; Okumura, H.; Sonoda, S.; Shimizu, S.

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Infrared studies on GaN single crystals and homoepitaxial layers
pp. 161-166(6)
Authors: Frayssinet, E.; Knap, W.; Prystawko, P.; Leszczynski, M.; Grzegory, I.; Suski, T.; Beaumont, B.; Gibart, P.

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Impurity incorporation during epitaxial growth of GaAs by chemical reaction
pp. 167-172(6)
Authors: Gandouzi1, M.; Bourgoin, J.C.; Mimila-Arroyo, J.; Grattepain, C.; Grattepain, C.

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Orientation of aluminum nitride films grown with hyperthermal molecular beams
pp. 173-180(8)
Authors: Ballarotto, V.W.; Little, M.E.; Kordesch, M.E.

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The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD
pp. 181-190(10)
Authors: Zamir, S.; Meyler, B.; Zolotoyabko, E.; Salzman, J.

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MBE growth and Raman studies of cubic and hexagonal GaN films on (001)-oriented GaAs substrates
pp. 191-196(6)
Authors: Liu, H.F.; Chen, H.; Li, Z.Q.; Wan, L.; Huang, Q.; Zhou, J.M.; Yang, N.; Tao, K.; Han, Y.J.; Luo, Y.

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Growth and structure of Cr thin films on GaAs(001)
pp. 197-202(6)
Authors: Qian, D.; Liu, G.L.; Loison, D.; Dong, G.S.; Jin, X.F.

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The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B (n=1-5) InP substrates
pp. 203-208(6)
Authors: Sun, Z.; Wu, J.; Chen, Y.; Liu, F.; Ding, D.; Li, Y.; Xu, B.; Wang, Z.

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Formation of InAs quantum dots on low-temperature GaAs epi-layer
pp. 209-213(5)
Authors: Wang, X.D.; Niu, Z.C.; Wang, H.; Feng, S.L.

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The effect of N+-implanted Si(111) substrate and buffer layer on GaN films
pp. 214-220(7)
Authors: Koh, E.K.; Ju Park, Y.; Kyu Kim, E.; Park, C.S.; Hun Lee, S.; Hee Lee, J.; Ho Choh, S.

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A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/GeH4
pp. 245-249(5)
Authors: Zhuo, Y.; Daizong, L.; Buwen, C.; Changjun, H.; Zhenlin, L.; Jinzhong, Y.; Qiming, W.; Junwu, L.

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Mechanisms of spiral growth in Bi2Te3 thin films grown by the hot-wall-epitaxy technique
pp. 250-258(9)
Authors: Ferhat, M.; Tedenac, J.C.; Nagao, J.

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Topotactical growth of indium sulfide by evaporation of metal onto molybdenite
pp. 259-264(6)
Authors: Kaito, C.; Ito, A.; Kimura, S.; Kimura, Y.; Saito, Y.; Nakada, T.

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Growth and structural analysis of nano-diamond films deposited on Si substrates pretreated by various methods
pp. 265-271(7)
Authors: Jiang, N.; Kujime, S.; Ota, I.; Inaoka, T.; Shintani, Y.; Makita, H.; Hatta, A.; Hiraki, A.

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Growth and recrystallization of CeO2 thin films deposited on R-plane sapphire by off-axis RF sputtering
pp. 287-293(7)
Authors: Spankova, M.; Vavra, I.; Gazi, S.; Machajdk, D.; Chromik, S.; Frohlich, K.; Hellemans, L.; Benacka, S.

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Growth and characterization of LiInS2 single crystals
pp. 313-322(10)
Authors: Isaenko, L.; Vasilyeva, I.; Yelisseyev, A.; Lobanov, S.; Malakhov, V.; Dovlitova, L.; Zondy, J.; Kavun, I.

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Growth, thermal and microhardness studies of single crystals of potassium penta borate (KB5)
pp. 323-326(4)
Authors: Thamizharasan, K.; Xavier Jesu Raja, S.; Xavier, F.P.; Sagayaraj, P.

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Structural defects in flux-grown stoichiometric LiNbO3 single crystals
pp. 327-333(7)
Authors: Polgar, K.; Peter, A.; Foldvari, I.; Szaller, Z.

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Effect of ferricenium salts on the crystal growth of hydroxyapatite in aqueous solution
pp. 353-358(6)
Authors: Koutsopoulos, S.; Pierri, E.; Dalas, E.; Tzavellas, N.; Klouras, N.

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Growth of bis(thiourea) cadmium chloride single crystals - a potential NLO material of organometallic complex
pp. 365-371(7)
Authors: Ushasree, P.M.; Muralidharan, R.; Jayavel, R.; Ramasamy, P.

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Measurements of clathrate-hydrate film thickness using laser interferometry
pp. 372-380(9)
Authors: Ohmura, R.; Kashiwazaki, S.; Mori, Y.H.

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Improved protein crystallization by vapor diffusion from drops in contact with transparent, self-assembled monolayers on gold-coated glass coverslips
pp. 390-398(9)
Authors: Ji, D.; Arnold, C.M.; Graupe, M.; Beadle, E.; Dunn, R.V.; Phan, M.N.; Villazana, R.J.; Benson, R.; Colorado Jr., R.; Randall Lee, T.; Friedman, J.M.

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Thin molecular films of neutral tetrathiafulvalene-derivatives
pp. 399-409(11)
Authors: Molas, S.; Caro, J.; Santiso, J.; Figueras, A.; Fraxedas, J.; Meziere, C.; Fourmigue, M.; Batail, P.

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Epitaxial growth of Fe/Pd-multilayers onto sapphire
pp. 410-418(9)
Authors: Muller, C.; Muhlbauer, H.; Steffl, T.; Rellinghaus, B.; Dumpich, G.

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Solidification of aluminium-lithium alloys near the cell/dendrite transition-influence of solutal convection
pp. 419-433(15)
Authors: Drevet, B.; Nguyen Thi, H.; Camel, D.; Billia, B.; Dupouy, M.D.

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The effect of oscillatory shear flow on step bunching
pp. 434-446(13)
Authors: Murray, B.T.; Coriell, S.R.; Chernov, A.A.; McFadden, G.B.

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Study of high quality GaN grown by OMVPE using an intermediate layer
pp. 447-450(4)
Authors: Benamara, M.; Liliental-Weber, Z.; Kellermann, S.; Swider, W.; Washburn, J.; Mazur, J.; Bourret-Courchesne, E.D.

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Room temperature 1.55m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy
pp. 451-454(4)
Authors: Li, Y.F.; Ye, X.L.; Xu, B.; Liu, F.Q.; Ding, D.; Jiang, W.H.; Sun, Z.Z.; Zhang, Y.C.; Liu, H.Y.; Wang, Z.G.

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Some inclusions and defects in a synthetic diamond single crystal
pp. 455-458(4)
Authors: Yin L.-W.; Zou, Z.; Li, M.; Liu, Y.; Hao, Z.; Cui, J.

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Containerless processing using floating zone technique on the ground
pp. 459-462(4)
Authors: Jia, X.; Miyazaki, A.; Kimura, H.

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