Publisher: Elsevier

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Volume 217, Number 1, 11 July 2000

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Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)
pp. 13-25(13)
Authors: Lahreche, H.; Vennegues, P.; Tottereau, O.; Laugt, M.; Lorenzini, P.; Leroux, M.; Beaumont, B.; Gibart, P.

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X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures
pp. 26-32(7)
Authors: Pan, Z.; Wang, Y.T.; Li, L.H.; Zhang, W.; Lin, Y.W.; Zhou, Z.Q.; Wu, R.H.

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Growth of InSb(1-x)Bix crystals by rotatory Bridgman method and their characterization
pp. 40-46(7)
Authors: Dixit, V.K.; Rodrigues, B.V.; Bhat, H.L.

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Pyrolysis of dimethylhydrazine and its co-pyrolysis with triethylgallium
pp. 47-54(8)
Authors: Bourret-Courchesne, E.; Ye, Q.; Peters, D.W.; Arnold, J.; Ahmed, M.; Irvine, S.J.C.; Kanjolia, R.; Smith, L.M.; Rushworth, S.A.

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Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy
pp. 65-81(17)
Authors: Theodoropoulos1, C.; Mountziaris, T.J.; Moffat, H.K.; Han, J.

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Verification of singular plane formation in CdTe homoepitaxy
pp. 102-108(7)
Authors: Yoshioka, Y.; Shimizu, K.; Takagaki, K.; Kasuga, M.

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Thermodynamic analysis of GaxB1-xN grown by MOVPE
pp. 109-114(6)
Authors: Wei, C.H.; Edgar, J.H.

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Gaseous etching of 6H-SiC at relatively low temperatures
pp. 115-124(10)
Authors: Xie, Z.Y.; Wei, C.H.; Li, L.Y.; Yu, Q.M.; Edgar, J.H.

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Low-temperature epitaxy of ZnO films on Si(001) and silica by reactive e-beam evaporation
pp. 131-137(7)
Authors: Wu, H.Z.; He, K.M.; Qiu, D.J.; Huang, D.M.

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Specific features of seeding and growth of bulk polar crystals
pp. 138-144(7)
Authors: Tsvetkov, E.G.; Tyurikov, V.I.

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Growth and characterization of LiGd1-x-yYxNdyF4 single crystals
pp. 145-150(6)
Authors: Ranieri, I.M.; Shimamura, K.; Nakano, K.; Fujita, T.; Courrol, L.C.; Morato, S.P.; Fukuda, T.

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Crystal growth of Ce:LiLuF4 for optical applications
pp. 151-156(6)
Authors: Ranieri, I.M.; Shimamura, K.; Nakano, K.; Fujita, T.; Liu, Z.; Sarukura, N.; Fukuda, T.

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Room temperature growth of nanocrystalline tin (II) selenide from aqueous solution
pp. 157-160(4)
Authors: Zhang, W.; Yang, Z.; Liu, J.; Zhang, L.; Hui, Z.; Yu, W.; Qian, Y.; Chen, L.; Liu, X.

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Observations of CO2-hydrate decomposition and reformation processes
pp. 189-200(12)
Authors: Uchida, T.; Ebinuma, T.; Narita, H.

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Direct observation of phase transformation layers in the undercooled hypoperitectic Ti47Al53 alloy
pp. 211-216(6)
Authors: Liu, Y.C.; Lin, X.; Guo, X.F.; Yang, G.C.; Zhou, Y.H.

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Growth of a decagonal Al70Ni15Co15 single quasicrystal by the Czochralski method
pp. 217-221(5)
Authors: Jeong, H.T.; Kim, S.H.; Kim, W.T.; Kim, D.H.; Inkson, B.J.

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