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Publisher: Elsevier

Volume 216, Number 1, 15 June 2000

2D-nucleation on (111)B micro-facet studied by microprobe-RHEED in GaAs MBE for mesa-structure fabrication
pp. 1-5(5)
Authors: Kishimoto, D.; Ogura, T.; Yamashiki, A.; Nishinaga, T.; Naritsuka, S.; Sakaki, H.

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Development of dislocation density analysis code for annealing process of single-crystal ingot
pp. 6-14(9)
Authors: Miyazaki, N.; Yamamoto, S.; Kutsukake, H.

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High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy
pp. 15-20(6)
Authors: Stemmer, J.; Fedler, F.; Klausing, H.; Mistele, D.; Rotter, T.; Semchinova, O.; Aderhold, J.; Sanchez1, A.M.; Pacheco, F.J.; Molina, S.I.; Fehrer, M.; Hommel, D.; Graul, J.

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LEC growth of In-doped GaAs with bottom solid feeding
pp. 21-25(5)
Authors: He, J.; Kou, S.

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Planar ordering of InP quantum dots on (100)In0.48Ga0.52P
pp. 26-32(7)
Authors: Hatami, F.; Muller, U.; Kissel, H.; Braune, K.; Blum, R.; Rogaschewski, S.; Niehus, H.; Kirmse, H.; Neumann, W.; Schmidbauer, M.; Kohler, R.; Masselink, W.T.

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Gas chromatography-mass spectroscopy study of tert-butylarsine stability and purification
pp. 33-36(4)
Authors: Bartram, M.E.; Breiland, W.G.; Bruskas, L.A.; Killeen, K.P.

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Growth of homogeneous In1-xGaxSb crystals by the graded solute concentration method
pp. 37-43(7)
Authors: Kinoshita, K.; Kato, H.; Matsumoto, S.; Yoda, S.

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Growth of high-quality cubic GaN on Si (001) coated with ultra-thin flat SiC by plasma-assisted molecular-beam epitaxy
pp. 44-50(7)
Authors: Wang, D.; Hiroyama1, Y.; Tamura, M.; Ichikawa, M.; Yoshida, S.

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Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy
pp. 57-61(5)
Authors: Zhuang, Q.D.; Yoon, S.F.; Zheng, H.Q.; Yuan, K.H.

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The annealing effects of Mg-doped GaN epilayers capped with SiO2 layers
pp. 62-68(7)
Authors: Lee C.-R.; Leem, J.; Ahn, B.

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Preparation and characterization of AlN powders in the AlCl3-NH3-N2 system
pp. 69-79(11)
Authors: Wang M.-C.; Wu, N.; Tasi, M.; Liu, H.

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Chemical beam epitaxy of AlAs using novel group-V precursors
pp. 80-86(7)
Authors: Shi, B.Q.; Kondow1, M.; Tu, C.W.

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Novel approach to the calculation of instability regions in GaInAsSb alloys
pp. 97-103(7)
Authors: Sorokin, V.S.; Sorokin, S.V.; Semenov, A.N.; Meltser, B.Y.; Ivanov, S.V.

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Vapor growth and characterization of ZnSeTe solid solutions
pp. 104-112(9)
Authors: Su C.-H.; Sha1, Y.; Volz, M.P.; Carpenter2, P.; Lehoczky, S.L.

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ZnSe horizontal traveling solvent growth using selenium solution
pp. 113-118(6)
Authors: Maruyama, K.; Suto, K.; Nishizawa, J.

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A detailed surface phase diagram for ZnSe MBE growth and ZnSe/GaAs(001) interface studies
pp. 119-126(8)
Authors: Wolfframm, D.; Evans, D.A.; Westwood, D.I.; Riley, J.

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Stoichiometry control of ZnTe single crystals by the vapor pressure-controlled wafer-annealing method
pp. 134-140(7)
Authors: Uchida, M.; Matsuda, Y.; Asahi, T.; Sato, K.; Oda, O.

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DX-like centers in n-type Al-doped ZnS1-xTex grown by molecular-beam epitaxy
pp. 141-146(6)
Authors: Lu, L.; Mak, K.K.; Ma, Z.H.; Wang, J.; Sou, I.K.; Ge, W.

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Study of crystallization and spectral properties of PbS nanocrystals doped in SiO2 aerogel matrix
pp. 147-151(5)
Authors: Yao, L.Z.; Ye, C.H.; Mo, C.M.; Cai, W.L.; Zhang, L.D.

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Chemical vapor deposition of silicon-germanium heterostructures
pp. 171-184(14)
Authors: Bozzo, S.; Lazzari, J.; Coudreau, C.; Ronda, A.; Arnaud d'Avitaya, F.; derrien, J.; Mesters, S.; Hollaender, B.; Gergaud, P.; Thomas, O.

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Influence of the three dimensionality of the HF electromagnetic field on resistivity variations in Si single crystals during FZ growth
pp. 204-219(16)
Authors: Ratnieks, G.; Muiznieks, A.; Buligins, L.; Raming, G.; Muhlbauer, A.; Ludge, A.; Riemann, H.

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Growth of large Bi2Sr2CaCu2Oy single crystals by a vertical Bridgman method
pp. 220-224(5)
Authors: Kishida, S.; Nakamura, M.; Liang, W.Y.

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Diamond growth on polycrystalline nickel silicides
pp. 225-234(10)
Authors: Rey, S.; Hommet, J.; Schmerber, G.; Le Normand, F.

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Crack formation in Zn3As2 epilayers grown by MOVPE
pp. 235-244(10)
Authors: Engelbrecht, J.A.A.; Scriven, G.J.; Neethling, J.H.; Wagener, M.C.

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Temperature dependence of characteristics of SrS:Cu(Ag) thin-film electroluminescent devices beyond room temperature
pp. 245-248(4)
Authors: Vlasenko, N.A.; Kononets, Y.F.; Kopytko, Y.V.; Soininen, E.; Sun, S.

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On nature of centers responsible for inherent memory in ZnS:Mn thin-film electroluminescent devices
pp. 249-255(7)
Authors: Vlasenko, N.A.; Chumachkova, M.M.; denisova, Z.L.; Veligura, L.I.

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Structural properties of subgrain boundaries in bulk SiC crystals
pp. 256-262(7)
Authors: Katsuno, M.; Ohtani, N.; Aigo, T.; Fujimoto, T.; Tsuge, H.; Yashiro, H.; Kanaya1, M.

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In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging
pp. 263-272(10)
Authors: Wellmann, P.J.; Bickermann, M.; Hofmann, D.; Kadinski, L.; Selder, M.; Straubinger, T.L.; Winnacker, A.

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Physical vapor transport of lead telluride
pp. 273-282(10)
Author: Palosz1, W.

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Thermochemical model and experimental studies on physical vapor transport of lead telluride-selenide
pp. 283-292(10)
Authors: Palosz1, W.; Alexander2, H.A.; Grasza, K.

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Flux synthesis of alkaline earth palladates
pp. 299-303(5)
Authors: Smallwood, P.L.; Smith, M.D.; zur Loye H.-C.

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Galvanostatic deposition and characterization of cuprous oxide thin films
pp. 304-310(7)
Authors: Mahalingam, T.; Chitra, J.S.P.; Rajendran, S.; Jayachandran, M.; Chockalingam, M.J.

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Morphological aspects of flux grown 0.91PZN-0.09PT crystals
pp. 311-316(6)
Authors: Kumar, F.J.; Lim, L.C.; Chilong, C.; Tan, M.J.

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Nonstoichiometry in apatite-type neodymium silicate single crystals
pp. 317-321(5)
Authors: Higuchi, M.; Kodaira, K.; Nakayama, S.

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Growth of II-Li3VO4 single crystals by the heater-in-zone zone-melting method using a traveling solvent of LiVO3
pp. 322-325(4)
Authors: Higuchi, M.; Chuman, Y.; Kitagawa, T.; Kodaira, K.

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Comparative study of textured and epitaxial ZnO films
pp. 326-329(4)
Authors: Ryu, Y.R.; Zhu1, S.; Wrobel2, J.M.; Jeong2, H.M.; Miceli, P.F.; White, H.W.

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Synthesis of p-type ZnO films
pp. 330-334(5)
Authors: Ryu, Y.R.; Zhu1, S.; Look, D.C.; Wrobel, J.M.; Jeong, H.M.; White, H.W.

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X-ray characterization of LiNbO3 films grown by pulsed laser deposition on SrTiO3(100), NdGaO3(110) and MgO(111) substrates
pp. 335-342(8)
Authors: Tagliente, M.A.; de Caro, L.; Sacchetti, A.; Tapfer, L.; Balestrino, G.; Medaglia, P.G.; Tebano, A.; Tucciarone, A.

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Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy
pp. 343-347(5)
Authors: Xu, K.; deng, P.; Xu, J.; Zhou, G.; Liu, W.; Tian, Y.

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Growth of high-quality single crystal of 30at% Yb:YAG and its laser performance
pp. 348-351(4)
Authors: Yang, P.; deng, P.; Xu, J.; Yin, Z.

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An azimuthal pattern of heat field in -BaB2O4 crystal growth
pp. 359-362(4)
Authors: Kokh, A.E.; Kononova, N.G.; Mokruchnikov, P.W.

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Crystal growth of La2(WO4)3
pp. 363-366(4)
Authors: Qi, X.; Luo, Z.; Liang, J.

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Growth of lowly Nd doped GdVO4 single crystal and its laser properties
pp. 367-371(5)
Authors: Zhang, H.; Meng, X.; Liu, J.; Zhu, L.; Wang, C.; Shao, Z.; Wang, J.; Liu, Y.

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Three-dimensional numerical simulation of oxide melt flow in Czochralski configuration
pp. 372-388(17)
Authors: Jing, C.J.; Imaishi, N.; Sato, T.; Miyazawa, Y.

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The influence of magnetism on precipitation of calcium phosphate
pp. 399-406(8)
Authors: Skytte Sorensen, J.; Lundager Madsen, H.E.

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Etching and surface termination of K2Cr2O7 {001} faces observed using in situ atomic force microscopy
pp. 413-427(15)
Authors: Plomp, M.; van Enckevort, W.J.P.; Vlieg, E.

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Determination of supercooling in the presence of macrosteps on the growing facet of BGO
pp. 428-436(9)
Authors: Golyshev, V.D.; Gonik, M.A.; Tsvetovsky, V.B.; Vasilev, Y.V.; Shlegel, V.N.

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Correlation between the crystal size and crystal growth rate of KDP and Rochelle salt crystals
pp. 437-442(6)
Authors: Mitrovic, M.M.; Zekic, A.A.; Napijalo, M.M.

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The calcification of fibrin in vitro
pp. 450-458(9)
Authors: Koutsopoulos, S.; Dalas, E.

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Polymorph and morphology of calcium carbonate crystals induced by proteins extracted from mollusk shell
pp. 459-465(7)
Authors: Feng, Q.L.; Pu, G.; Pei, Y.; Cui, F.Z.; Li, H.D.; Kim, T.N.

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A cell to study in situ electrocrystallization of calcium carbonate
pp. 466-474(9)
Authors: Euvrard, M.; Filiatre, C.; Crausaz, E.

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Application of genetic algorithm for determination of mass transfer coefficients
pp. 475-482(8)
Authors: Sahin, O.; Sayan, P.; Nusret Bulutcu, A.

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Microsegregation in Peltier interface demarcation
pp. 483-494(12)
Authors: Dabo, Y.; Nguyen Thi, H.; Coriell, S.R.; McFadden, G.B.; Li1, Q.; Billia, B.

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Electrical pulsing during directional solidification: analysis of transients by Laplace transform
pp. 495-500(6)
Authors: Coriell, S.R.; McFadden, G.B.; Billia, B.; Nguyen Thi, H.; Dabo, Y.

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Photoluminescence properties of dense InAs/AlInAs quantum wire arrays
pp. 527-531(5)
Authors: Li, H.; Daniels-Race, T.; Hasan, M.

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Sphalerite-type (Cd,Zn)S films by atomic layer epitaxy in the gas flow
pp. 532-534(3)
Authors: Szczerbakow, A.; Bak-Misiuk, J.; Dynowska, E.; Ghali, M.; Godlewski, M.; Ivanov, V.Y.; Swiatek, K.

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Investigations on cracking in CdWO4 crystals
pp. 535-537(3)
Authors: Sabharwal, S.C.; Sangeeta

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Stereo-open spherulites in high-pressure crystallized poly (ethylene terephthalate)
pp. 538-541(4)
Authors: Li, L.; Rui, H.; Lu, A.; Fan, W.; Hong, S.; Fu, Q.

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