Publisher: Elsevier

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Volume 212, Number 3, May 2000

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(111)B growth elimination in GaAs MBE of (001)-(111)B mesa structure by suppressing 2D-nucleation
pp. 373-378(6)
Authors: Kishimoto, D.; Nishinaga, T.; Naritsuka, S.; Noda, T.; Nakamura, Y.; Sakaki, H.

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Nitridation effects of GaP(111)B substrate on MOCVD growth of InN
pp. 379-384(6)
Authors: Bhuiyan, A.G.; Hashimoto, A.; Yamamoto, A.; Ishigami, R.

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The viscosity of liquid cadmium telluride
pp. 385-390(6)
Authors: Shcherbak, L.; Kopach, O.; Plevachuk, Y.; Sklyarchuk, V.; Dong, C.; Siffert, P.

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Growth and properties of hexagonal GaN on GaAs(001) substrate by RF-molecular beam epitaxy using an AlAs nucleation layer
pp. 391-396(6)
Authors: Liu, H.; Chen, H.; Li, Z.; Wan, L.; Huang, Q.; Jiunming; Yang, N.; Tao, K.; Han, Y.J.; Luo, Y.

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Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates
pp. 397-401(5)
Authors: Sun, X.L.; Yang, H.; Wang, Y.T.; Zheng, L.X.; Xu, D.P.; Zhao, D.G.; Li, S.F.; Wang, Z.G.

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GaAs substrate thermal preheating effect exerted on ZnTe epilayer
pp. 416-422(7)
Authors: Nam, S.; Yu, Y.; Rhee, J.; O, B.; Lee, K.; Choi, Y.D.; Lee, J.W.; Sakakibara, S.

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Highly conductive Nb doped SrTiO3 epitaxial thin films grown by laser molecular beam epitaxy
pp. 451-455(5)
Authors: Zhao, T.; Lu, H.; Chen, F.; Dai, S.; Yang, G.; Chen, Z.

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Influence of atomic layer deposition parameters on the phase content of Ta2O5 films
pp. 459-468(10)
Authors: Kukli, K.; Ritala, M.; Matero, R.; Leskela, M.

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Melt growth of (Tb,Lu)3Al5O12 mixed garnet fiber crystals
pp. 469-475(7)
Authors: Chani, V.I.; Yoshikawa, A.; Machida, H.; Fukuda, T.

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Growth and second-harmonic-generation of Bi3+- or Li+-doped GdCa4O(BO3)3 crystals
pp. 476-479(4)
Authors: Zhang, S.; Cheng, Z.; Liu, J.; Han, J.; Shao, Z.; Chen, H.

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The combined influence of supersaturation and impurity concentration on crystal growth
pp. 480-488(9)
Authors: Kubota, N.; Yokota, M.; Mullin, J.W.

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Estimation of crystal growth kinetics using differential scanning calorimetry
pp. 489-499(11)
Authors: Mohan, R.; Boateng, K.A.; Myerson, A.S.

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Growth and precipitation of a monoclinic calcium pyrophosphate tetrahydrate indicating auto-inhibition at pH7
pp. 500-506(7)
Authors: Christoffersen, M.R.; Balic-Zunic, T.; Pehrson, S.; Christoffersen, J.

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Pressure-induced faceting in an NH4Cl crystal
pp. 512-515(4)
Authors: Sawada, T.; Takemura, K.

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Role of competitive interactions in growth rate trends of subtilisin s88 crystals
pp. 543-554(12)
Authors: Asthagiri, D.; Lenhoff, A.M.; Gallagher, D.T.

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Non-equilibrium interface of a two-dimensional low-temperature crystal
pp. 564-573(10)
Authors: Shneidman, V.A.; Jackson, K.A.; Beatty, K.M.

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One-dimensional phase-field model for binary alloys
pp. 574-583(10)
Authors: Popov, D.I.; Regel, L.L.; Wilcox, W.R.

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Thermoelectric magnetohydrodynamic flow during crystal growth with a moderate or weak magnetic field
pp. 584-596(13)
Authors: Khine, Y.Y.; Walker, J.S.; Szofran, F.R.

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Role of lateral growth fronts in the formation of InxGa1-xAs bridge layer on trench substrates
pp. 597-600(4)
Authors: Iida, S.; Hayakawa, Y.; Minami, S.; Koyama, T.; Kumagawa, M.

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Growth of InxGa1-xAs layers with pyramidal morphology on (100)GaAs patterned substrates by liquid-phase epitaxy
pp. 601-604(4)
Authors: Iida, S.; Balakrishnan, K.; Koyama, T.; Hayakawa, Y.; Kumagawa, M.

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Study on a new IR nonlinear optics crystal CsGeCl3
pp. 605-607(3)
Authors: Gu, Q.; Pan, Q.; Wu, X.; Shi, W.; Fang, C.

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