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Publisher: Elsevier

Volume 211, Number 1, April 2000

Historical aspects of crystal growth technology
pp. 1-12(12)
Author: Scheel, H.J.

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Monte Carlo modeling of silicon crystal growth
pp. 13-17(5)
Authors: Beatty, K.M.; Jackson, K.A.K.A.

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Modeling grain boundaries using a phase-field technique
pp. 18-20(3)
Authors: Warren, J.A.J.A.; Kobayashi, R.; Craig Carter, W.

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Investigation of vibrational control of convective flows in Bridgman melt growth configurations
pp. 34-42(9)
Authors: Fedoseyev, A.I.; Alexander, J.I.D.J.I.D.

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Dynamic simulations of interface morphologies in free dendritic growth
pp. 43-48(6)
Authors: Emmerich, H.; Kassner, K.; Ihle, T.; Weiss, A.

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Crystal growth and liquid-phase epitaxy of gallium nitride
pp. 62-67(6)
Authors: Klemenz, C.; Scheel, H.J.

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On mechanisms of sublimation growth of AlN bulk crystals
pp. 68-72(5)
Authors: Segal, A.S.; Karpov, S.Y.; Makarov, Y.N.Y.N.; Mokhov, E.N.; Roenkov, A.D.; Ramm, M.G.; Vodakov, Y.A.

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Vapor-phase epitaxial lateral overgrowth of ZnSe on GaAs
pp. 73-77(5)
Authors: Mauk, M.G.; Feyock, B.W.

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Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates
pp. 78-81(4)
Authors: Schowalter, L.J.; Rojo, J.C.; Slack, G.A.; Shusterman, Y.; Wang, R.; Bhat, I.; Arunmozhi, G.

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Preparation and characterization of sol-gel derived potassium lithium niobate films
pp. 82-85(4)
Authors: Zhang, H.; Zhou, Y.; Kam, C.H.; Cheng, S.; Han, X.; Lam, Y.L.; Chan, Y.C.

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H-dependent magnetic domain structures in La0.67Sr0.33MnO3 thin films
pp. 86-92(7)
Authors: Hawley, M.E.; Brown, G.W.; Yashar, P.C.; Kwon, C.

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Studying of transparent conductive ZnO:Al thin films by RF reactive magnetron sputtering
pp. 93-97(5)
Authors: Chang, J.F.; Wang, H.L.; Hon, M.H.

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Epitaxial growth of oxides with pulsed laser interval deposition
pp. 98-105(8)
Authors: Blank, D.H.A.; Koster, G.; Rijnders, G.A.J.H.M.; Eelco; Slycke, P.; Rogalla, H.

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Pressure effects in ZnO films using off-axis sputtering deposition
pp. 106-110(5)
Authors: Zhu, S.; Su, C.; Lehoczky, S.L.; Peters, P.; George, M.A.

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Synthesis of a new hydroxyapatite-silica composite material
pp. 111-115(5)
Authors: Villacampa, A.I.; Garca-Ruiz, J.M.

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Discerning nature's mechanism for making complex biocomposite crystals
pp. 116-121(6)
Authors: Smith, B.L.; Paloczi, G.T.; Hansma, P.K.; Paul Levine, R.

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Biomineralization mechanisms: a kinetics and interfacial energy approach
pp. 137-142(6)
Authors: Nancollas, G.H.; Wu, W.

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Patterned crystallization of calcite in vivo and in vitro
pp. 143-148(6)
Author: Aizenberg, J.

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Distribution coefficients of protein impurities in ferritin and lysozyme crystals Self-purification in microgravity
pp. 149-156(8)
Authors: Thomas, B.R.; Chernov, A.A.; Vekilov, P.G.; Carter, D.C.

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Growth of 3'' and 4'' gallium arsenide crystals by the vertical gradient freeze (VGF) method
pp. 157-162(6)
Authors: Birkmann, B.; Rasp, M.; Stenzenberger, J.; Muller, G.

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H-vacancy complex VInH4 abundance and its influences in n-type LEC InP
pp. 174-178(5)
Authors: Fung, S.; Zhao, Y.; Sun, N.; Beling, C.D.; Chen, X.; Bi, K.; Wu, X.; Zhang, J.; Sun, T.

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Carrier mobility distribution in annealed undoped LEC InP material
pp. 179-183(5)
Authors: Zhao, Y.W.; Fung, S.; Beling, C.D.; Sun, N.F.; Chen, X.D.; Sun, T.N.; Zhang, J.; Bi, K.; Wu, X.

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Structural studies on synthesised gallium nitride
pp. 184-188(5)
Authors: Senthil Kumar, M.; Ramasamy, P.; Kumar, J.

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Liquid-phase epitaxy of low-bandgap III-V antimonides for thermophotovoltaic devices
pp. 189-193(5)
Authors: Mauk, M.G.; Shellenbarger, Z.A.; Cox, J.A.; Sulima, O.V.; Bett, A.W.; Mueller, R.L.; Sims, P.E.; McNeely, J.B.; DiNetta, L.C.

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Bulk growth of quasi-binary quaternary alloys
pp. 194-201(8)
Authors: Marn, C.; Ostrogorsky, A.G.

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Process modeling of the industrial VGF growth process using the software package CrysVUN++
pp. 202-206(5)
Authors: Backofen, R.; Kurz, M.; Muller, G.

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Growth of inclusion-free InSb crystals by vertical Bridgman method
pp. 207-210(4)
Authors: Mohan, P.; Senguttuvan, N.; Moorthy Babu, S.; Ramasamy, P.

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Growth and characterisation of l-tyrosine-doped TGS crystals
pp. 220-224(5)
Authors: Meera, K.; Aravazhi, S.; Santhana Raghavan, P.; Ramasamy, P.

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Influence of Ce and Co doping ions on photorefractive effect of SBN:61 crystals
pp. 225-229(5)
Authors: Li, M.; Xu, X.; Qiu, D.; Chong, T.; Kumagai, H.; Hirano, M.

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The correlation of MgO-doped near-stoichiometric LiNbO3 composition to the defect structure
pp. 230-236(7)
Authors: Furukawa, Y.; Kitamura, K.; Takekawa, S.; Niwa, K.; Yajima, Y.; Iyi, N.; Mnushkina, I.; Guggenheim, P.; Martin, J.M.

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YVO4 single-crystal fiber growth by the LHPG method
pp. 237-241(5)
Authors: Huang C.-H.C.-H.; Chen, J.; Hu, C.

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Crystal growth and properties of AgGaTe2
pp. 242-246(5)
Authors: Schunemann, P.G.; Setzler, S.D.; Pollak, T.M.; Ohmer, M.C.; Goldstein, J.T.; Zelmon, D.E.

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Growth and light yield performance of dense Ce3+-doped (Lu,Y)AlO3 solid solution crystals
pp. 252-256(5)
Authors: Petrosyan, A.G.; Ovanesyan, K.L.; Shirinyan, G.O.; Butaeva, T.I.; Pedrini, C.; Dujardin, C.; Belsky, A.

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Phase-matched crystal growth of AgGaSe2 and AgGa1-xInxSe2
pp. 257-264(8)
Authors: Schunemann, P.G.; Setzler, S.D.; Pollak, T.M.

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Morphology of TSSG grown potassium lithium niobate (KLN) crystal in relation to its structure and growth conditions
pp. 265-270(6)
Authors: Xu, X.W.; Chong, T.C.; Zhang, G.Y.; Li, L.; Hu, P.F.; Kumagai, H.; Hirano, M.

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Growth of large size LBO (Li2B4O7) single crystals by modified Bridgman technique
pp. 271-275(5)
Authors: Tsutsui, N.; Ino, Y.; Imai, K.; Senguttuvan, N.; Ishii, M.

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Growth of paratellurite crystals: effect of axial temperature gradient on the quality of the crystals
pp. 276-280(5)
Authors: Kumaragurubaran, S.; Krishnamurthy, D.; Subramanian, C.; Ramasamy, P.

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Growth of potassium lithium niobate (KLN) single crystals for second harmonic generation (SHG) application
pp. 281-285(5)
Authors: Li, L.; Chong, T.C.; Xu, X.W.; Kumagai, H.; Hirano, M.

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High-temperature solution growth of Cr2+:CdSe for tunable mid-IR laser application
pp. 290-294(5)
Authors: Ndap J.-O.; Adetunji, O.O.; Chattopadhyay, K.; Rablau, C.I.; Egarievwe, S.U.; Ma, X.; Morgan, S.; Burger, A.

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Flux growth and characterization of Cr4+:Ca2GeO4 crystals as a new near infrared tunable laser material
pp. 295-301(7)
Authors: Bykov, A.B.; Petricevic, V.; Steiner, J.; Yao, D.; Isaacs, L.L.; Kokta, M.R.; Alfano, R.R.

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Growth of Ce-doped LiCaAlF6 and LiSrAlF6 single crystals by the Czochralski technique under CF4 atmosphere
pp. 302-307(6)
Authors: Shimamura, K.; Baldochi, S.L.; Mujilatu, N.; Nakano, K.; Liu, Z.; Sarukura, N.; Fukuda, T.

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Structure and morphology of phthalocyanine films grown in electrical fields by vapor deposition
pp. 308-312(5)
Authors: Zhu, S.; Banks, C.E.; Frazier, D.O.; Penn, B.; Abdeldayem, H.; Hicks, R.; Burns, H.D.; Thompson, G.W.

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Preparation, microstructural and electrical characterization of SrVO3 single crystal fiber
pp. 313-317(5)
Authors: Reyes Ardila, D.; Andreeta, J.P.; Basso, H.C.

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Growth of a 3'' langasite crystal with clear faceting
pp. 318-324(7)
Authors: Uda, S.; Buzanov, O.

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The status of SiC bulk growth from an industrial point of view
pp. 325-332(8)
Authors: Muller, S.G.S.G.; Glass, R.C.; Hobgood, H.M.; Tsvetkov, V.F.; Brady, M.; Henshall, D.; Jenny, J.R.; Malta, D.; Carter, C.H.

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Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
pp. 333-338(6)
Authors: Selder, M.; Kadinski, L.; Makarov, Y.; Durst, F.; Wellmann, P.; Straubinger, T.; Hofmann, D.; Karpov, S.; Ramm, M.

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Growth and characterization of high-purity SiC single crystals
pp. 339-342(4)
Authors: Augustine, G.; Balakrishna, V.; Brandt, C.D.

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Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide
pp. 343-346(4)
Authors: Vorob'ev, A.N.; Karpov, S.Y.; Zhmakin, A.I.; Lovtsus, A.A.; Makarov, Y.N.; Krishnan, A.

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Analysis of sublimation growth of bulk SiC crystals in tantalum container
pp. 347-351(5)
Authors: Karpov, S.Y.; Kulik, A.V.; Zhmakin, I.A.; Makarov, Y.N.; Mokhov, E.N.; Ramm, M.G.; Ramm, M.S.; Roenkov, A.D.; Vodakov, Y.A.

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Modeling of silicon carbide crystal growth by physical vapor transport method
pp. 352-359(8)
Authors: Ma, R.; Chen, Q.; Zhang, H.; Prasad, V.; Balkas, C.M.; Yushin, N.K.

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The influence of thermoelectromagnetic convection (TEMC) on the Bridgman growth of semiconductors
pp. 360-364(5)
Authors: Yesilyurt, S.; Vjusic, L.; Motakef, S.; Szofran, F.R.; Croell, A.

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A numerical model for inductively heated cylindrical silicon tube growth system
pp. 365-371(7)
Authors: Roy, A.; Mackintosh, B.; Kalejs, J.P.; Chen, Q.; Zhang, H.; Prasad, V.

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Economic feeder for recharging and ''topping off''
pp. 372-377(6)
Authors: Fickett, B.; Mihalik, G.

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Growth of Ga-doped Ge0.98Si0.02 by vertical Bridgman with a baffle
pp. 378-383(6)
Authors: Marn, C.; Ostrogorsky, A.G.

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Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell
pp. 384-388(5)
Authors: Zhang, D.H.; Shi, W.; Zheng, H.Q.; Yoon, S.F.; Kam, C.H.; Wang, X.Z.

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Fabrication of submicrometer structures by PSE/MBE
pp. 389-394(6)
Authors: Bacchin, G.; Nishinaga, T.

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Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source
pp. 395-399(5)
Authors: Naritsuka, S.; Nishinaga, T.; Tachikawa, M.; Mori, H.

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InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition
pp. 400-404(5)
Authors: Biefeld, R.M.; Phillips, J.D.; Kurtz, S.R.

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Arsenic pressure dependence of Ga desorption from MBE high index GaAs substrates
pp. 405-410(6)
Authors: Ohachi, T.; Feng, J.M.; Asai, K.

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Development of a modular, large-scale, high-throughput semicontinuous-mode liquid-phase epitaxy system
pp. 411-415(5)
Authors: Mauk, M.G.; Shellenbarger, Z.A.; Sims, P.E.; Bloothoofd, W.; McNeely, J.B.; Collins, S.R.; Rabinowitz, P.I.; Hall, R.B.; DiNetta, L.C.; Barnett, A.M.

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Design of ceramic springs for use in semiconductor crystal growth in microgravity
pp. 421-427(7)
Authors: Kaforey, M.L.; deeb, C.W.; Matthiesen, D.H.

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Ground and space processing of single-crystalline organic thin films
pp. 428-433(6)
Authors: Carswell, W.E.; Ittu Zugrav, M.; Wessling, F.C.; Haulenbeek, G.

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Bridgman growth without crucible contact using the dewetting phenomenon
pp. 434-440(7)
Authors: Duffar, T.; Dusserre, P.; Picca, F.; Lacroix, S.; Giacometti, N.

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Distribution of Te in GaSb grown by Bridgman technique under microgravity
pp. 441-445(5)
Authors: Nakamura, T.; Nishinaga, T.; Ge, P.; Huo, C.

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Growth of single crystals belonging to a family of one-dimensional oxides: commensurate and incommensurate structures
pp. 452-457(6)
Authors: zur Loye, H.; Layland, R.C.; Smith, M.D.; Claridge, J.B.

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Hydrothermal growth and morphology of calcite single crystals
pp. 458-460(3)
Authors: Nefyodova, I.V.; Lyutin, V.I.; Borodin, V.L.; Chvanski, P.P.; Leonyuk, N.I.

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Melt growth of non-isoaxial bicrystals of an Fe-3%Si alloy
pp. 461-465(5)
Authors: Adamek, J.; Lejcek, P.

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Directional growth of Al-Nb-X eutectic alloys
pp. 466-470(5)
Authors: Rios, C.T.; Milenkovic, S.; Caram, R.

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Electrochemical growth near the Ba1-xKxBiO3 (x>0.5)-Ba1.7K1.3Bi2O7 boundary and the crystals properties
pp. 471-475(5)
Authors: Shiryaev, S.V.; Barilo, S.N.; Ustinovich, S.N.; Fedotova, V.V.; Gatalskaya, V.I.; Szymczak, H.; Szymczak, R.; Baran, M.

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Crystal growth and photoluminescence of CuInXGa1-XSe2 alloys
pp. 476-479(4)
Authors: Yoshino, K.; Yokoyama, H.; Maeda, K.; Ikari, T.

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Directional solidification processing of eutectic alloys in the Ni-Al-V system
pp. 485-490(6)
Authors: Milenkovic, S.; Coelho, A.A.; Caram, R.

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Flux growth of (Y,RE)Al3(BO3)4 solid solutions (RE=Nd, Gd, Ho, Yb, Lu)
pp. 491-496(6)
Authors: Koporulina, E.V.; Leonyuk, N.I.; Mokhov, A.V.; Pilipenko, O.V.; Bocelli, G.; Righi, L.

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Hydrothermal synthesis of lead titanate from complexed precursor solutions
pp. 497-500(4)
Authors: Gelabert, M.C.; Gersten, B.L.; Riman, R.E.

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Growth of superconducting (M2Cu2O3)m(CuO2)n crystals
pp. 501-505(5)
Authors: Maltsev, V.; Leonyuk, L.; Babonas, G.; Szymczak, R.; Reza, A.

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Synthesis and solubility of GaPO4 crystals in acid solutions under hydrothermal conditions
pp. 506-508(3)
Authors: Motchany, A.I.; Chvanski, P.P.; Leonyuk, N.I.

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