Publisher: Elsevier

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Volume 210, Number 4, March 2000

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Formation and dissolution of InAs quantum dots on GaAs
pp. 421-428(8)
Authors: Heyn, C.C.; Endler, D.; Zhang, K.; Hansen, W.

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RHEED monitoring of AlN epitaxial growth by plasma-assisted molecular beam epitaxy
pp. 429-434(6)
Authors: Ferro, G.; Okumura, H.; Ide, T.; Yoshida, S.

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Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation
pp. 435-443(9)
Authors: Zauner, A.R.A.; Weyher, J.L.; Plomp, M.; Kirilyuk, V.; Grzegory, I.; van Enckevort, W.J.P.; Schermer, J.J.; Hageman, P.R.; Larsen, P.K.

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Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
pp. 451-457(7)
Authors: Liu, H.Y.; Xu, B.; Gong, Q.; Ding, D.; Liu, F.Q.; Chen, Y.H.; Jiang, W.H.; Ye, X.L.; Li, Y.F.; Sun, Z.Z.; Zhang, J.F.; Liang, J.B.; Wang, Z.G.

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Effects of phosphorous beam equivalent pressure on GaInAsP/GaAs grown by solid source molecular beam epitaxy with a valve phosphorous cracker cell
pp. 458-462(5)
Authors: Wang, X.Z.; Zhang, D.H.; Zheng, H.Q.; Yoon, S.F.; Kam, C.H.; Shi, W.; Raman, A.

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Directional solidification of InxGa1-xAs
pp. 471-477(7)
Authors: Hashio, K.; Tatsumi, M.; Kato, H.; Kinoshita, K.

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Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge
pp. 478-486(9)
Authors: Kim, J.; Byun, D.; Kim, J.; Kum, D.

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Formation mechanism of InxGa1-xAs bridge layers on patterned GaAs substrates
pp. 496-504(9)
Authors: Iida, S.; Hayakawa, Y.; Koyama, T.; Kumagawa, M.

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Comparative analysis of characteristics of Si, Mg, and undoped GaN
pp. 505-510(6)
Authors: Kim, K.S.; Oh, C.S.; Lee, W.; Lee, K.J.; Yang, G.M.; Hong, C.; Suh, E.; Lim, K.Y.; Lee, H.J.; Byun, D.J.

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Effect of gallium incorporation on the physical properties of ZnO films grown by spray pyrolysis
pp. 516-520(5)
Authors: Ramakrishna Reddy, K.T.; Gopalaswamy, H.; Reddy, P.J.; Miles, R.W.

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Characterization and growth of ZnSTe epilayers by hot-wall epitaxy
pp. 521-526(6)
Authors: Yu, Y.; Nam, S.; Rhee, J.; O, B.; Lee, K.; Choi, Y.D.

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High-density silicon and silicon nitride cones
pp. 527-531(5)
Authors: Chen, Y.; Guo, L.; Shaw, D.T.

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Radial segregation due to weak convection in a floating zone
pp. 573-586(14)
Authors: Winkler, C.; Amberg, G.; Carlberg, T.T.

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Growth of BiSrCaCuO thin films by MOCVD
pp. 587-594(8)
Authors: Stejskal, J.; Leitner, J.J.; Sedmidubsky, D.; Nevriva, M.; Beran, P.; Strejc, A.

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Growth of SiC nanorods prepared by carbon nanotubes-confined reaction
pp. 595-599(5)
Authors: Tang, C.C.; Fan, S.S.; Dang, H.Y.; Zhao, J.H.; Zhang, C.; Li, P.; Gu, Q.

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In situ mesa etching and immediate regrowth in a HVPE reactor for buried heterostructure device fabrication
pp. 600-612(13)
Authors: Messmer, E.R.; Lindstrom, T.; Lourdudoss, S.

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Step bunching behaviour on the {0001} surface of hexagonal SiC
pp. 613-622(10)
Authors: Ohtani, N.; Katsuno, M.; Aigo, T.; Fujimoto, T.; Tsuge, H.; Yashiro, H.; Kanaya, M.

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Homoepitaxial growth of 6H-SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilylmethane precursor
pp. 629-636(8)
Authors: Jeong, J.K.J.K.; Na, H.J.; Choi, J.; Hwang, C.S.; Kim, H.J.; Bahng, W.

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Periodic structure during unidirectional solidification for peritectic Cd-Sn alloys
pp. 637-645(9)
Authors: Yasuda, H.; Notake, N.; Tokieda, K.; Ohnaka, I.

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Crystal growth of Na(V,Ti)2O5
pp. 646-650(5)
Authors: Colonescu, L.; Ammerahl, U.; Gross, R.; Kierspel, H.; Buchner, B.

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Epitaxial growth of MgO films on Si(111) by metal organic chemical vapor deposition
pp. 651-654(4)
Authors: Sung, M.M.; Kim, C.; G. Kim, C.; Kim, Y.

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Effect of Yb3+ content on purity and crystal growth of Ba2NaNb5O15
pp. 655-662(8)
Authors: Lebbou, K.; Itagaki, H.; Yoshikawa, A.; Fukuda, T.; Carillo-Romo, F.; Boulon, G.; Brenier, A.; Cohen-Adad, M.T.

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Growth of Tb3Ga5O12 fiber and bulk crystals using micro-pulling-down apparatus
pp. 663-669(7)
Authors: Chani, V.I.V.I.; Yoshikawa, A.; Machida, H.; Satoh, T.; Fukuda, T.

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Determination of the Li/Nb ratio in LiNbO3 crystals grown by Czochralski method with K2O added to the melt
pp. 670-676(7)
Authors: Serrano, M.D.; Bermudez, V.; Arizmendi, L.; Dieguez, E.

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Growth of Cr:LiCaAlF6 and Cr:LiSrAlF6 by the Czochralski method
pp. 683-693(11)
Authors: Klimm, D.; Lacayo, G.; Reiche, P.

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Growth of pure and RE3+-doped Y2O3 single crystals by LHPG technique
pp. 693-698(6)
Authors: Goutaudier, C.; Ermeneux, F.S.; Cohen-Adad, M.T.; Moncorge, R.

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Growth and luminescence mechanisms of Ba2ErCl7: a new laser up-conversion crystal
pp. 699-703(5)
Authors: Zhou, G.; Han, J.; Zhang, S.; Cheng, Z.; Chen, H.

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An analysis of flow and mass transfer during the solution growth of potassium titanyl phosphate
pp. 704-718(15)
Authors: Vartak, B.; Kwon, Y.; Yeckel, A.; derby, J.J.

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Influence of solution conditions on deposition of calcium phosphate on titanium by NaOH-treatment
pp. 735-740(6)
Authors: Feng, Q.L.; Cui, F.Z.; Wang, H.; Kim, T.N.; Kim, J.O.

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Metastable zonewidth, induction period and interfacial energy of zinc tris(thiourea) sulfate
pp. 741-745(5)
Authors: Ushasree, P.M.; Muralidharan, R.; Jayavel, R.; Ramasamy, P.

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Pressure and concentration dependence of nucleation kinetics for crystallization of subtilisin
pp. 746-752(7)
Authors: Waghmare, R.Y.; Pan, X.J.; Glatz, C.E.

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Crystallization of the E. coli polyamine-induced protein: a novel procedure based on the concept of ionic strength reducers
pp. 761-766(6)
Authors: Papanikolau, Y.; Gessmann, R.; Petratos, K.; Igarashi, K.; Kokkinidis, M.

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Numerical investigation of natural and forced solutal convection above the surface of a growing crystal
pp. 767-771(5)
Authors: Brailovskaya, V.A.; Zilberberg, V.V.; Feoktistova, L.V.

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Single-crystal growth of sulphospinel CuIr2S4 from Bi solution
pp. 772-776(5)
Authors: Matsumoto, N.; Nagata, S.

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Growth of pyroxene-type MnGeO3 and (Mn,Mg)GeO3 crystals by the floating-zone method
pp. 783-787(5)
Authors: Matsumura, H.; Mamiya, M.; Takei, H.

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Effects of system parameters on MHD flows in rotating magnetic fields
pp. 788-796(9)
Authors: Gelfgat, Y.; Krumins, J.; Li, B.Q.

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Controllable cubic and hexagonal GaN growth on GaAs(001) substrates by molecular beam epitaxy
pp. 811-814(4)
Authors: Chen, H.; Li, Z.Q.; Liu, H.F.; Wan, L.; Zhang, M.H.; Huang, Q.; Zhou, J.M.; Luo, Y.; Han, Y.J.; Tao, K.; Yang, N.

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Utilization of microgravity to improve the crystal quality of biologically important proteins: chaperonin-60, GrpE, B-subunit of V-type ATPase, and MIF
pp. 819-823(5)
Authors: Kitano, K.; Sasaki, R.; Nogi, T.; Fukami, T.A.; Nakagawa, A.; Miki, K.; Tanaka, I.

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Growth and characterization of a promising nonlinear optical organic crystal
pp. 824-827(4)
Authors: Prabhu, S.G.; Mohan Rao, P.

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