Publisher: Elsevier

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Volume 209, Number 1, 15 January 2000

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Two-dimensional numerical calculation of solute diffusion in microchannel epitaxy of InP
pp. 1-7(7)
Authors: Yan, Z.; Naritsuka, S.; Nishinaga, T.

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Growth and characterization of high-quality GaInAs/AlInAs triple wells
pp. 8-14(7)
Authors: Yang, Q.K.; Chen, J.X.; Li, A.Z.

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Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3-2.7m laser structures
pp. 15-20(6)
Authors: Simanowski, S.; Herres, N.; Mermelstein, C.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.; Weimann, G.

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Growth of highly strained GaInAs/GaAs quantum wells for 1.2m wavelength lasers
pp. 27-36(10)
Authors: Schlenker, D.; Miyamoto, T.; Chen, Z.; Koyama, F.; Iga, K.

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Photoluminescence characterization of Si-doped low-temperature grown GaAs and GaAs/AlGaAs multiple quantum wells
pp. 37-42(6)
Authors: Zhang, M.H.; Zhang, Y.F.; Huang, Q.; Bao, J.M.S.; Zhou, J.M.

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Quantitative study of carbon doping of GaAs grown by metalorganic vapor-phase epitaxy
pp. 43-49(7)
Authors: Gong, Y.; Mo, J.; Yu, H.; Wang, L.; Xia, G.

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Poly-crystalline silicon with large grains deposited from Al-Si melt
pp. 50-54(5)
Authors: Yamada, T.; Tachikawa, M.; Nishioka, T.; Yamada, T.

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Defect structure of monocrystalline (001)-oriented Zn0.62Cu0.19In0.19S films grown on GaP by pulsed laser deposition (PLD)
pp. 68-74(7)
Authors: Wagner, G.; Lange, U.; Bente, K.; Lenzner, J.; Lorenz, M.

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Czochralski growth and structural investigations of La1-xNdxGaO3 solid solution single crystals
pp. 75-80(6)
Authors: Berkowski, M.; Fink-Finowicki, J.; Piekarczyk, W.; Perchuc, L.; Byszewski, P.; Vasylechko, L.O.; Savytskij, D.I.; Mazur, K.; Sass, J.; Kowalska, E.; Kapusniak, J.

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Assessment of MgO(100) and (111) substrate quality by X-ray diffraction - Appl. Phys.
pp. 91-101(11)
Authors: Madsen, L.D.; Charavel, R.; Birch, J.; Svedberg, E.B.

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Revised form of Jackson-Hunt theory: application to directional solidification of MnBi/Bi eutectics
pp. 110-121(12)
Authors: Zheng, L.L.; Larson Jr., D.J.; Zhang, H.

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Dendritic ice morphology in unidirectionally solidified collagen suspensions
pp. 122-129(8)
Authors: Schoof, H.; Bruns, L.; Fischer, A.; Heschel, I.; Rau, G.

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Growth kinetics and morphological change of polymorphs of L-glutamic acid
pp. 138-145(8)
Authors: Kitamura, M.; Ishizu, T.

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Atomistic modelling of gibbsite: surface structure and morphology
pp. 159-166(8)
Authors: Fleming, S.; Rohl, A.; Lee, M.; Gale, J.; Parkinson, G.

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Nucleation on active sites: evolution of size distribution
pp. 198-202(5)
Authors: Kozsek, Z.; demo, P.; Sato, K.

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Pulsed excimer laser annealing of Mg-doped cubic GaN
pp. 203-207(5)
Authors: Xu, D.; Yang, H.; Li, S.F.; Zhao, D.G.; Ge, H.; Wu, R.H.

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Synthesis and structure of nanocrystal-assembled bulk GaN
pp. 208-212(5)
Authors: Chen, X.L.; Cao, Y.G.; Lan, Y.C.; Xu, X.P.; Li, J.Q.; Lu, K.Q.; Jiang, P.Z.; Xu, T.; Bai, Z.G.; Yu, Y.D.; Liang, J.K.

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A hydrothermal method for low-temperature growth of nanocrystalline pyrite nickel diselenide
pp. 213-216(4)
Authors: Zhang, W.; Hui, Z.; Cheng, Y.; Zhang, L.; Xie, Y.; Qian, Y.

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Single-crystal growth of aluminum tungstate-lutetium tungstate solid solution
pp. 217-219(3)
Authors: Imanaka, N.; Hiraiwa, M.; Tamura, S.; Adachi, G.Y.; Dabkowska, H.; Dabkowski, A.

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A new pyroelectric crystal l-lysine-doped TGS (LLTGS)
pp. 220-222(3)
Authors: Su, G.; He, Y.; Yao, H.; Shi, Z.; Wu, Q.

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