Single crystalline bulk growth of In_0.3Ga_0.7As on GaAs seed using the multi-component zone melting method

Authors: Kodama S.¹; Furumura Y.; Kinoshita K.; Kato H.; Yoda S.

Source: Journal of Crystal Growth, Volume 208, Number 1, 1 January 2000 , pp. 165-170(6)

Publisher: Elsevier

Keywords: [Physical Astronomy Classification Scheme] 81.05.E; [Physical Astronomy Classification Scheme] 81.10.F; Zone melting; InGaAs; Ternary compound semiconductor; Lattice constant; Homogeneity

Language: English

Document Type: Research article

DOI: 10.1016/S0022-0248(99)00413-3

Affiliations: 1: aFujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Kanagawa, Japan

Links for this article

http://www.ingentaconnect.com/els/00220248/2000/00000208/00000001/art00413
http://openurl.ingenta.com/content?genre=article&issn=0022-0248&volume=208&issue=1&spage=165&epage=170
http://dx.doi.org/10.1016/S0022-0248(99)00413-3

Single crystalline bulk growth of In0.3Ga0.7As on GaAs seed using the multi-component zone melting method