Journal of Crystal Growth

A new way to achieve both selective and lateral growth by molecular beam epitaxy: low angle incidence microchannel epitaxy
pp. 1-10(10)
Authors: Bacchin G.; Nishinaga T.

Comparison of hydrazine, dimethylhydrazine, and t-butylamine nitrogen sources for MOVPE growth of GaInNAs for solar cells
pp. 11-17(7)
Authors: Friedman D.J.; Norman A.G.; Geisz J.F.; Kurtz S.R.

Influence of growth rate on the structure of thick GaN layers grown by HVPE
pp. 18-26(9)
Authors: Paskova T.; Goldys E.M.; Yakimova R.; Svedberg E.B.; Henry A.; Monemar B.

High purity GaSb grown by LPE in a sapphire boat
pp. 27-32(6)
Authors: Olvera-Hernandez J.; de Anda F.; Navarro-Contreras H.; Mishurnyi V.A.

Direct observation of LPE heterogrowth of GaAs on a GaP substrate
pp. 33-36(4)
Authors: Tanaka A.; Izumi N.; Kimura M.; Sukegawa T.

Structural properties of Al_xGa_1-xN grown on sapphire by molecular beam epitaxy
pp. 37-41(5)
Authors: Kim J.W.W.; Son C.-S.; Choi I.-H.; Park Y.K.; Kim Y.T.; Ambacher O.; Stutzmann M.

A new double crucible technique for LEC growth of In-doped GaAs crystals
pp. 42-48(7)
Authors: He J.; Kou S.

Lattice contraction and electrical conduction of heavily carbon doped AlAs layers grown by atomic layer epitaxy
pp. 49-56(8)
Authors: Hirose S.; Ibuka H.; Yoshida A.; Kano N.; Hara K.; Munekata H.; Kukimoto H.

Polytypism in epitaxially grown gallium nitride
pp. 57-64(8)
Authors: Selke H.; Kirchner V.; Heinke H.; Einfeldt S.; Ryder P.L.; Hommel D.

Analysis of Be doping of InGaP lattice matched to GaAs
pp. 65-72(8)
Authors: Bettini J.; de Carvalho M.M.G.; Cotta M.A.; Pudenzi M.A.A.; Frateschi N.C.; Silva Filho A.; Cardoso L.P.; Landers R.

Quasi-thermodynamic analysis of MOVPE of AlGaN - Theory and Practice
pp. 73-78(6)
Authors: Lu D.-C.D.-C.; Duan S.

Effect of Sb pre-deposition on the compositional profiles in MOVPE-grown InAsSb/InAs(111) multi-quantum wells
pp. 79-84(6)
Authors: Pillai M.R.; Theiring S.C.; Barnett S.A.; Wessels B.W.; Desikan A.; P. Kvam E.

Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga_1-xIn_xP in the Planetary Reactor
pp. 85-92(8)
Authors: Dauelsberg M.; Kadinski L.; Makarov Y.N.; Bergunde T.; Strauch G.; Weyers M.

Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3m
pp. 93-99(7)
Authors: Nakata Y.; Mukai K.; Sugawara M.; Ohtsubo K.; Ishikawa H.; Yokoyama N.

Growth and characterization of GaN single crystals
pp. 100-106(7)
Authors: Balkas C.M.; Sitar Z.; Bergman L.; Shmagin I.K.; Muth J.F.; Kolbas R.; Nemanich R.J.; Davis R.F.

Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy
pp. 107-112(6)
Authors: Wang H.L.; Ning D.; Zhu H.J.; Chen F.; Wang H.; Wang X.D.; Feng S.L.

Accurate control of Sb composition in AlGaAsSb alloys on InP substrates by molecular beam epitaxy
pp. 113-116(4)
Authors: Almuneau G.; Hall E.; Mathis S.; Coldren L.A.

GaAs film deposited on SrTiO₃ substrate by molecular beam epitaxy
pp. 117-122(6)
Authors: Zhao Q.X.; Zsebok O.; Sodervall U.; Karlsteen M.; Willander M.; Liu X.Q.; Chen Y.D.; Lu W.; Shen S.C.

Diffusion of acceptors in n-type and semi-insulating InP
pp. 123-129(7)
Author: Tuck B.

Surface migration effect and lateral vapor-phase diffusion effect for InGaAsP/InP narrow-stripe selective metal-organic vapor-phase epitaxy
pp. 130-136(7)
Authors: Sakata Y.; Inomoto Y.; Komatsu K.

Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition
pp. 137-144(8)
Authors: Lee C.-Y.C.-Y.; Wu M.-C.M.-C.; Shiao H.-P.; Ho W.-J.

Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells
pp. 145-152(8)
Authors: Xin H.P.; Kavanagh K.L.; Tu C.W.

Gallium nitride thin layers via a liquid precursor route - GaN based Light Emitters and Lasers
pp. 153-159(7)
Authors: Puchinger M.; Wagner T.; Rodewald D.; Bill J.; Aldinger F.; Lange F.F.

Observation of two independent sources for arsenic carryover
pp. 160-164(5)
Authors: Moon Y.; Lee T.-W.; Yoon S.; Yoo K.; Yoon E.

Single crystalline bulk growth of In_0.3Ga_0.7As on GaAs seed using the multi-component zone melting method
pp. 165-170(6)
Authors: Kodama S.; Furumura Y.; Kinoshita K.; Kato H.; Yoda S.

InGaAs single crystal with a uniform composition in the growth direction grown on an InGaAs seed using the multicomponent zone growth method
pp. 171-178(8)
Authors: Nishijima Y.; Nakajima K.; Otsubo K.; Ishikawa H.

Unstable composition region in the wurtzite B_1-x-yGa_xAl_yN system
pp. 179-182(4)
Authors: Wei C.H.; Edgar J.H.

Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer
pp. 183-188(6)
Authors: Cheng X.-C.; McGill T.C.

The morphology and formation mechanism of aluminum nitride nanocrystals synthesized by chemical vapor deposition
pp. 189-196(8)
Authors: Wu N.-C.; Tsai M.-S.; Wang M.-C.; Liu H.-S.

Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga_0.52In_0.48P grown on GaAs substrates
pp. 197-204(8)
Authors: Yoon S.F.; Mah K.W.; Zheng H.Q.; Zhang P.H.

High crystalline quality ZnBeSe grown by molecular beam epitaxy with Be-Zn co-irradiation
pp. 205-210(6)
Authors: Guo S.P.; Luo Y.; Lin W.; Maksimov O.; Tamargo M.C.; Kuskovsky I.; Tian C.; Neumark G.F.

A novel ''multi-tube'' vapour growth system and its application to the growth of bulk crystals of cadmium telluride
pp. 211-218(8)
Authors: Mullins J.T.; Carles J.; Aitken N.M.; Brinkman A.W.

In situ studies of Cd_1-xZn_xTe nucleation and crystal growth
pp. 219-230(12)
Authors: Choi B.W.; Wadley H.N.G.

Luminescent studies of alloy Zn_xCd_1-xSe quantum dots grown on ZnSe by metalorganic chemical vapor-phase deposition
pp. 231-236(6)
Authors: Zhang X.B.; Hark S.K.

Characterizations of ZnSe single crystals grown by physical vapor transport
pp. 237-247(11)
Authors: Su C.-H.C.-H.; Dudley M.; Matyi R.; Feth S.; Lehoczky S.L.

Formation of InSb by annealing Sb₂S₃-In thin films
pp. 248-252(5)
Authors: Nair M.T.S.; Rodrguez-Lazcano Y.; Nair P.K.

Surface reconstruction and crystal structure of MgSe films grown on ZnTe substrates by MBE
pp. 253-258(6)
Authors: Wang H.-M.H.-M.; Chang J.-H.; Hanada T.; Arai K.; Yao T.

Growth of ZnS:Tm thin films by MOCVD
pp. 259-263(5)
Author: Hsu C.-T.C.-T.

Modified growth of Cd_1-xZn_xTe single crystals
pp. 264-268(5)
Authors: Zhu S.-f.S.-f.; Zhao B.-j.; Li Q.-f.; Yu F.-l.; Shao S.-y.; Zhu X.-h.

Modeling studies of PVT growth of ZnSe: current status and future course
pp. 269-281(13)
Authors: Ramachandran N.; Su C.-H.; Lehoczky S.L.

Study on defects in EMCZ-Si crystal by infrared light scattering tomography
pp. 282-288(7)
Authors: Ma M.; Nango N.; Ogawa T.; Watanabe M.; Eguchi M.

Structural and electrical properties of silicon epitaxial layers grown by LPE on highly resistive monocrystalline substrates
pp. 289-296(8)
Authors: Kopecek R.; Peter K.; Hotzel J.; Bucher E.

Phase modifications in polysilicon films with fibrous and dendritic structure
pp. 297-302(6)
Authors: Nakhodkin N.G.; Kulish N.P.; Rodionova T.V.; Strutinsky A.M.

Dislocation effect on crystal-melt interface: an in situ observation of the melting of silicon - Growth Mechanisms and Dynamics
pp. 303-312(10)
Authors: Wang Y.Y.; Kakimoto K.

Thermophysical properties measurement of molten silicon by high-temperature electrostatic levitator: density, volume expansion, specific heat capacity, emissivity, surface tension and viscosity
pp. 313-321(9)
Authors: Rhim W.-K.W.-K.; Ohsaka K.

Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy
pp. 322-326(5)
Authors: Liu J.P.; Huang D.D.; Li J.P.; Lin Y.X.; Sun D.Z.; Kong M.Y.

Three-dimensional simulation of vertical zone-melting crystal growth: symmetry breaking to multiple states - Growth Mechanisms and Dynamics
pp. 327-340(14)
Authors: Lan C.W.; Liang M.C.

Control of thermal conditions during crystal growth by inverse modeling
pp. 341-349(9)
Authors: Kurz M.; Muller G.

Growth of Y_1-zNd_zBa₂Cu₃O_x single crystals
pp. 350-356(7)
Authors: Aswal D.K.; Mori T.; Hayakawa Y.; Kumagawa M.

High quality YBa₂Cu₃O_7-/PrBa₂Cu₃O_7- multilayers grown by pulsed injection MOCVD
pp. 357-364(8)
Authors: Galindo V.; Senateur J.P.; Abrutis A.; Teiserskis A.; Weiss F.

Growing high-quality C₆₀ films by using Sb buffer layer
pp. 365-369(5)
Authors: Xu W.; Hou J.G.

Float-zone crystal growth of CdGeAs₂ in microgravity: numerical simulation and experiment
pp. 370-378(9)
Authors: Saghir M.Z.; Labrie D.; Ginovker A.; Paton B.E.; George A.E.; Olson K.; Simpson A.M.

Characterization of CdGeAs₂ grown by the float zone technique under microgravity
pp. 379-388(10)
Authors: Labrie D.; George A.E.; Simpson A.M.; Paton B.E.; Ginovker A.; Saghir M.Z.

Effects of a low-temperature buffer layer on structural properties of ZnO epilayers grown on (111)CaF₂ by two-step MBE
pp. 389-394(6)
Authors: Ko H.J.; Chen Y.F.; Zhu Z.; Hanada T.; Yao T.

Epitaxial growth of MnAs on single-crystalline Mn-Zn ferrite substrates
pp. 395-400(6)
Authors: Ikeda T.; Fujioka H.; Hayakawa S.; Ono K.; Oshima M.; Yoshimoto M.; Maruta H.; Koinuma H.; Inaba K.; Matsuo R.

Growth of fcc Co in sputter-deposited Co/Au multilayers with (111) texture
pp. 401-408(8)
Authors: Kehagias T.T.; Komninou P.P.; Christides C.; Nouet G.; Stavroyiannis S.; Karakostas T.

Cross-sectional cleavages of SiC for evaluation of epitaxial layers
pp. 409-415(7)
Authors: Syvajarvi M.; Yakimova R.; Janzen E.

Thermal analysis and synthesis from the melts of Cu-based quaternary compounds Cu-III-IV-VI₄ and Cu₂-II-IV-VI₄ (II=Zn,Cd; III=Ga,In; IV=Ge,Sn; VI=Se)
pp. 416-422(7)
Authors: Matsushita H.; Maeda T.; Katsui A.; Takizawa T.

Strain relaxation in PbSnSe and PbSe/PbSnSe layers grown by liquid-phase epitaxy on (100)-oriented silicon
pp. 423-430(8)
Authors: Li C.P.; McCann P.J.; Fang X.M.

Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas
pp. 431-441(11)
Authors: Segal A.S.; Vorob'ev A.N.; Karpov S.Y.; Mokhov E.N.; Ramm M.G.; Ramm M.S.; Roenkov A.D.; Vodakov Y.A.; Makarov Y.N.

Growth temperatures and microstructure selection during Bridgman solidification of hypereutectic Al-La and Al-Ce alloys
pp. 442-448(7)
Authors: Juarez-Hernandez A.; Jones H.

Initial growth of 3,4,9,10-perylenetetracarboxylic-dianhydride (PTCDA) on Au(111): a scanning tunneling microscopy study
pp. 449-458(10)
Authors: Chizhov I.; Kahn A.; Scoles G.

Effect of internal radiative heat transfer on transition of flow modes in CZ oxide melt
pp. 459-465(7)
Authors: Kobayashi M.; Tsukada T.; Hozawa M.

Solid solution single crystal growth of the aluminum tungstate-scandium tungstate system by a modified CZ method
pp. 466-470(5)
Authors: Imanaka N.; Hiraiwa M.; Tamura S.; Adachi G.; Dabkowska H.; Dabkowski A.

Vanadium transition metal oxide films obtained by annealing under room atmosphere of metal layers sequentially deposited
pp. 471-481(11)
Authors: Baba Ali E.; Bernede J.C.; Le Ray P.

Crystal growth, thermal and optical properties of SmCa₄O(BO₃)₃ crystal
pp. 482-486(5)
Authors: Shujun Z.; Hua Y.; Zhenxiang C.; Xuesong L.; Huanchu C.

The study of a self-frequency-doubling laser crystal Nd³⁺:GdAl₃(BO₃)₄
pp. 487-492(6)
Authors: Tu C.; Qiu M.; Huang Y.; Chen X.; Aidong Jiang; Luo Z.

Growth and characterization of MgO doped near stoichiometric LiNbO₃ crystals as a new nonlinear optical material
pp. 493-500(8)
Authors: Niwa K.; Furukawa Y.; Takekawa S.; Kitamura K.

Floating-zone growth of rutile single crystals inclined at 48^o to the c-axis
pp. 501-507(7)
Authors: Higuchi M.; Hatta K.; Takahashi J.; Kodaira K.; Kaneda H.; Saito J.

The influence of temperature distribution upon the structure of LiNbO₃ crystal rods grown using the LHPG method
pp. 508-512(5)
Authors: Chen J.-C.J.-C.; Lee Y.-C.

Alignment mechanisms between particles in crystalline aggregates
pp. 513-519(7)
Authors: Collier A.P.; Hetherington C.J.D.; Hounslow M.J.

The role of dislocations, integral strain, and supersaturation on the growth rates of sodium nitrate
pp. 520-524(5)
Authors: Jones C.M.; Larson M.A.; Ristic R.I.; Sherwood J.N.

Monitoring crystal dissolution at nanometer resolution using laser reflectometry
pp. 525-532(8)
Authors: Eggington P.J.; Taylor A.G.

Crystallization kinetics of ammonium perchlorate in MSMPR crystallizer
pp. 533-540(8)
Authors: Tanrikulu S.U.S.U.; Eroglu I.; Bulutcu A.N.; Ozkar S.

Low-temperature preparation of highly (111) oriented PZT thin films by a modified sol-gel technique
pp. 541-545(5)
Authors: Meng X.J.; Cheng J.G.; Li B.; Guo S.L.; Ye H.J.; Chu J.H.

Growth habit of rutile and -Al₂O₃ crystals
pp. 546-554(9)
Authors: Li W.-J.W.-J.; Shi E.-W.; Yin Z.-W.

Study of ammonium chloride crystallization in a mixed vessel
pp. 555-568(14)
Authors: Sessiecq P.; Gruy F.; Cournil M.

Spherulitic crystallization of 3-nitro-1,2,4-triazol-5-one in water+N-methyl-2-pyrrolidone
pp. 569-578(10)
Author: Kim K.-J.K.-J.

Crystallization of some heavy-metal phosphates alone and in the presence of calcium ion
pp. 579-591(13)
Authors: Ayati M.; Lundager Madsen H.E.

New method for the production of silver halide tabular crystals
pp. 592-598(7)
Author: Millan A.

Growth of potassium sulfate crystals in the presence of organic dyes: in situ characterization by atomic force microscopy
pp. 599-614(16)
Authors: Mauri A.; Moret M.

Theoretical morphology of adipic acid crystals - Struct. Funct. Genet.
pp. 615-622(8)
Authors: Pfefer G.; Boistelle R.

The evolution of growth modes and activity of growth sources on canavalin investigated by in situ atomic force microscopy
pp. 623-637(15)
Authors: Land T.A.; De Yoreo J.J.

Effects of pressure on growth kinetics of tetragonal lysozyme crystals
pp. 638-644(7)
Authors: Suzuki Y.; Miyashita S.; Sazaki G.; Nakada T.; Sawada T.; Komatsu H.

Effects of a magnetic field on the growth rate of tetragonal lysozyme crystals
pp. 645-650(6)
Authors: Yanagiya S.-i.; Sazaki G.; Durbin S.D.; Satoru Miyashita; Nakajima K.; Komatsu H.; Watanabe K.; Motokawa M.

Cessation of growth in crystals
pp. 651-656(6)
Authors: Falcon Rodrguez C.; Aguilera Morales S.; Falcon Rodrguez F.

Crystallization of proteinase K complexed with substrate analogue peptides on US space missions STS-91 and STS-95
pp. 657-664(8)
Authors: Eschenburg S.; Degenhardt M.; Moore K.; DeLucas L.J.; Peters K.; Fittkau S.; Weber W.; Betzel C.

Growth kinetics and motion of thaumatin crystals during USML-2 and LMS microgravity missions and comparison with earth controls
pp. 665-677(13)
Authors: Lorber B.; Ng J.D.; Lautenschlager P.; Giege R.

Pressure dependence of subtilisin crystallization kinetics
pp. 678-686(9)
Authors: Waghmare R.Y.; Webb J.N.; Randolph T.W.; Larson M.A.; Glatz C.E.

Nucleation-limited aggregation of crystallites in fractal growth
pp. 687-695(9)
Authors: Liu X.-Y.X.-Y.; Wang M.; Li D.-W.; Strom C.S.; Piet Bennema; Ming N.-B.

Growth characteristics of boehmite-derived ultrafine theta and alpha-alumina particles during phase transformation
pp. 696-708(13)
Authors: Wen H.-L.H.-L.; Yen F.-S.F.-S.

Morphological instability of the austenite growth front in a laser remelted iron-carbon-silicon alloy
pp. 709-716(8)
Authors: Lima M.S.F.; Goldenstein H.

A visualization and computational study of horizontal Bridgman crystal growth
pp. 717-725(9)
Authors: Lan C.W.; Su M.C.; Liang M.C.

Analytic solution for a non-axisymmetric isothermal dendrite - Transport and Stability
pp. 726-745(20)
Authors: McFadden G.B.; Coriell S.R.; Sekerka R.F.

Similarity solutions describing the melting of a mushy layer
pp. 746-756(11)
Authors: Feltham D.L.; Worster M.G.M.G.

A parametric study of segregation effects during vertical Bridgman crystal growth with an axial magnetic field
pp. 757-771(15)
Authors: Ma N.; Walker J.S.

Spacing in solidification of dendritic arrays
pp. 772-778(7)
Author: Makkonen L.

Limits of constitutional undercooling and interfacial liquid compositions during steady-state directional solidification of binary alloys at various interface velocities
pp. 779-785(7)
Authors: Srikanth S.; Ramachandrarao P.; Chvoj Z.

MBE growth and X-ray study of high-quality cubic-GaN on GaAs(001)
pp. 786-790(5)
Authors: Li Z.Q.; Chen H.; Liu H.F.; Li J.H.; Wan L.; Liu S.; Huang Q.; Zhou J.M.

Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
pp. 791-794(4)
Authors: Zhuang Q.D.; Li J.M.; Wang X.X.; Zeng Y.P.; Wang Y.T.; Wang B.Q.; Pan L.; Wu J.; Kong M.Y.; Lin L.Y.

Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer
pp. 795-798(4)
Authors: Chen H.; Cai L.C.; Bao C.L.; Li J.H.; Huang Q.; Zhou J.M.

Surfactant effect of Mn on the formation of self-organized InAs nanostructures
pp. 799-803(5)
Authors: Guo S.P.; Shen A.; Yasuda H.; Ohno Y.; Matsukura F.; Ohno H.

Relaxation of anisotropic domain tilting along vertical growth direction in selectively lateral overgrown GaN by hydride vapor phase epitaxy
pp. 804-808(5)
Authors: Kim C.; Yi J.; Kim S.; Hong Kim M.; Yang M.; Choi Y.; Yoo T.-K.; Tai Kim S.

Discontinuous growth
pp. 809-812(4)
Authors: Suk M.-J.-J.; Leonartz K.