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Publisher: Elsevier

Volume 207, Number 4, 15 December 1999

Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2
pp. 255-265(11)
Authors: Xie, Q.; van Nostrand, J.E.; Jones, R.L.; Sizelove, J.; Look, D.C.

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The polarity of AlN films grown on Si(111)
pp. 266-272(7)
Authors: Lebedev, V.; Schroter, B.; Kipshidze, G.; Richter, W.

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Defect chemistry in CdTe crystals
pp. 273-277(5)
Authors: Fochuk, P.; Korovyanko, O.; Turkevych, I.; Panchuk, O.; Siffert, P.

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A numerical investigation of the effect of thermoelectromagnetic convection (TEMC) on the Bridgman growth of Ge1-xSix
pp. 278-291(14)
Authors: Yesilyurt, S.; Vujisic, L.; Motakef, S.; Szofran, F.R.; Volz, M.P.

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Growth mode of decagonal quasicrystal phase in laser resolidified Al72Ni12Co16 alloy
pp. 292-297(6)
Authors: Liu, Y.C.; Yang, G.C.; Zhou, Y.H.; Wang, T.; Xu, D.S.; Xu, Q.Y.

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Growth of apatite-type neodymium silicate single crystals by the floating-zone method
pp. 298-302(5)
Authors: Higuchi, M.; Kodaira, K.; Nakayama, S.

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Morphological and growth rate distributions of small self-nucleated paracetamol crystals grown from pure aqueous solutions
pp. 308-318(11)
Authors: Finnie, S.D.; Ristic, R.I.; Sherwood, J.N.; Zikic, A.M.

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Habit modification of potassium acid phthalate (KAP) single crystals by impurities
pp. 325-329(5)
Authors: Murugakoothan, P.; Mohan Kumar, R.; Ushasree, P.M.; Jayavel, R.; Dhanasekaran, R.; Ramasamy, P.

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