Publisher: Elsevier

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Volume 206, Number 3, October 1999

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Bridgman crystal growth and defect formation in GaSb
pp. 159-165(7)
Authors: Boiton, P.; Giacometti, N.; Duffar, T.; Santailler, J.L.; Dusserre, P.; Nabot, J.P.

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Optimization of OMVPE-grown GaInP/GaAs quantum well interfaces
pp. 166-170(5)
Authors: Chiou, S.W.; Lee, C.P.; Hong, J.M.; Chen, C.W.; Tsou, Y.

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p-Type doping of GaAs(001) layers grown by MBE using silicon as a dopant
pp. 171-176(6)
Authors: Quivy, A.A.; Sperandio, A.L.; da Silva, E.C.F.; Leite, J.R.

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Structuring of LiYF4 for 1-D waveguide laser investigations by chemical wet etching techniques
pp. 187-196(10)
Authors: Burkhalter, R.; Rogin, P.; Eckau, A.; Buchal, C.; Hulliger, J.

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Growth and investigation of efficient self-frequency-doubling NdxGd1-xCa4O(BO3)3 crystal
pp. 197-202(6)
Authors: Zhang, S.; Cheng, Z.; Han, J.; Zhou, G.; Shao, Z.; Wang, C.; Chow, Y.T.; Chen, H.

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Pulsation processes at hydrothermal crystal growth (beryl as example)
pp. 203-214(12)
Authors: Thomas, V.G.; demin, S.P.; Foursenko, D.A.; Bekker, T.B.

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Cell tip undercooling in directional solidification
pp. 215-229(15)
Authors: Pocheau, A.; Georgelin, M.

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Growth of a GaN layer on a glass substrate by metal organic chemical vapor deposition
pp. 241-244(4)
Authors: Wang, H.X.; Wang, T.; Lachab, M.; Ishikawa, Y.; Hao, M.S.; Oyama, K.; Nishino, K.; Sakai, S.; Tominaga, K.

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Preparation of KSnOAsO4 crystals from flux
pp. 245-248(4)
Authors: Chani, V.I.; Fukuda, T.

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The growth of Nd3+:GdxY1-xAl3(BO3) 4 crystals - Nonlinear Opt.
pp. 249-251(3)
Authors: Tu, C.; Huang, Y.; Qiu, M.; Luo, Z.

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Atomic force microscopy of KH2PO4 crystallization in moist media
pp. 252-254(3)
Authors: Rashkovich, L.N.; Shustin, O.A.; Chernevich, T.G.

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