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Publisher: Elsevier

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Volume 200, Number 3, April 1999

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Effect of bismuth on liquid-phase epitaxy (LPE) grown GaAs layer using Ga-As-Bi melt
pp. 341-347(7)
Authors: Jeganathan, K.; Saravanan, S.; Ramasamy, P.; Kumar, J.

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Surface morphology studies on sublimation grown GaN by atomic force microscopy
pp. 348-352(5)
Authors: Qhalid Fareed, R.S.; Tottori, S.; Nishino, K.; Sakai, S.

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Molecular beam epitaxy (MBE) growth and structural properties of GaN and AlN on 3C-SiC(001) substrates
pp. 353-361(9)
Authors: Gerthsen, D.; Neubauer, B.; Dieker, C.; Lantier, R.; Rizzi, A.; Luth, H.

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Optical and structural properties of epitaxial GaN films grown by pulsed laser deposition
pp. 362-367(6)
Authors: Huang, T.F.; Marshall, A.; Spruytte, S.; Harris Jr., J.S.

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Effect of trench structure on the quality of InGaAs layers grown on patterned GaAs (111) A substrates
pp. 368-374(7)
Authors: Iida, S.; Hayakawa, Y.; Koyama, T.; Kumagawa, M.

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Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures
pp. 375-381(7)
Authors: Zhuang, Q.D.; Li, J.M.; Zeng, Y.P.; Pan, L.; Li, H.X.; Kong, M.Y.; Lin, L.Y.

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Growth of CdS/ZnS strained layer superlattices on GaAs(001) by molecular-beam epitaxy with special reference to their structural properties and lattice dynamics
pp. 391-398(8)
Authors: Dinger, A.; Hetterich, M.; Goppert, M.; Grun, M.; Klingshirn, C.; Weise, B.; Liang, J.; Wagner, V.; Geurts, J.

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Growth and annealing effect of high-quality ZnSe:N/ZnSe by MOCVD
pp. 399-406(8)
Authors: Miki, T.; Wang, J.F.; Omino, A.; Isshiki, M.

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Strain dependent growth of silicon on Ge/Si-C heterostructures
pp. 407-413(7)
Authors: Butz, R.; Luth, H.

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The strain relaxation in a lattice-mismatched heterostructure
pp. 421-426(6)
Authors: Lim, Y.S.; Lee, J.Y.; Kim, T.W.

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Solubility of YBa2Cu3O7- and Nd1+xBa2-xCu3O7+/- in the BaO/CuO flux
pp. 435-440(6)
Authors: Klemenz, C.; Scheel, H.J.

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Optical microscopic, synchrotron X-ray topographic and reticulographic study of homoepitaxial CVD diamond
pp. 446-457(12)
Authors: Lang, A.R.; Makepeace, A.P.W.; Alexander, W.B.; McCormick, T.; Pehrsson, P.E.; Butler, J.E.

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SiC epitaxial layer growth in a novel multi-wafer vapor-phase epitaxial (VPE) reactor
pp. 458-466(9)
Authors: Burk, A.A.; O'Loughlin, M.J.; Nordby, H.D.

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The lattice constants of ternary and quaternary alloys in the PbTe-SnTe-MnTe system
pp. 483-489(7)
Authors: Miotkowska, S.; Dynowska, E.; Miotkowski, I.; Szczerbakow, A.; Witkowska, B.; Kachniarz, J.; Paszkowicz, W.

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Epitaxial variations of Ni films grown on MgO(001) - Condens. Matter
pp. 498-504(7)
Authors: McCaffrey, J.P.; Svedberg, E.B.; Phillips, J.R.; Madsen, L.D.

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Fabrication and characteristics of CeO2 films on Si(100) substrates by pulsed laser deposition
pp. 505-509(5)
Authors: Wang, R.; Pan, S.; Zhou, Y.; Zhou, G.; Liu, N.; Xie, K.; Lu, H.

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Growth and optical characteristics of Ce-doped and Ce:Na-codoped BaLiF3 single crystals
pp. 521-526(6)
Authors: Baldochi, S.L.; Shimamura, K.; Nakano, K.; Mujilatu, N.; Fukuda, T.

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Modeling particle growth and deposition in a tubular CVD reactor
pp. 527-542(16)
Authors: Lu, S.; Lin, H.; Lin, C.

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Controlled crystal growth of calcium phosphate on titanium surface by NaOH-treatment
pp. 550-557(8)
Authors: Feng, Q.L.; Wang, H.; Cui, F.Z.; Kim, T.N.

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Experimental investigation of calcium silicate hydrate (C-S-H) nucleation
pp. 565-574(10)
Authors: Garrault-Gauffinet, S.; Nonat, A.

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Crystallization of proteins under an external electric field
pp. 575-582(8)
Authors: Taleb, M.; Didierjean, C.; Jelsch, C.; Mangeot, J.P.; Capelle, B.; Aubry, A.

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Pressure-dependence of the interfacial tension of a critical nucleus in the binary-ideal solution
pp. 592-598(7)
Authors: Nishioka, K.; Mori, A.; Takano, K.J.; Kaishita, Y.; Narimatsu, S.

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Si doping effect on self-organized InAs/GaAs quantum dots
pp. 603-607(5)
Authors: Qian, Z.; Songlin, F.; Dong, N.; Haijun, Z.; Zhiming, W.; Yuanming, D.

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Substrate surface atomic structure influence on the growth of InAlAs quantum dots
pp. 608-612(5)
Authors: Zhou, W.; Zhu, Z.M.; Liu, F.Q.; Xu, B.; Xu, H.Z.; Wang, Z.G.

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High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)
pp. 613-616(4)
Authors: Liu, J.P.; Huang, D.D.; Li, J.P.; Sun, D.Z.; Kong, M.Y.

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Evolution of height distribution of Ge islands on Si(100)
pp. 617-620(4)
Authors: Liu, J.P.; Gong, Q.; Huang, D.D.; Li, J.P.; Sun, D.Z.; Kong, M.Y.

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Laser heated pedestal growth of orthorhombic SrHfO3 single crystal fiber
pp. 621-624(4)
Authors: Andreeta, M.R.B.; Hernandes, A.C.; Cuffini, S.L.; Guevara, J.A.; Mascarenhas, Y.P.

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