Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy

Authors: Zheng H.Q.1; Radhakrishnan K.; Wang H.; Zhang P.H.; Yoon S.F.; Ng G.I.

Source: Journal of Crystal Growth, Volume 197, Number 4, 1 March 1999 , pp. 762-768(7)

Publisher: Elsevier

Key:
Free Content - Free Content
New Content - New Content
Subscribed Content - Subscribed Content
Free Trial Content - Free Trial Content

Keywords: Beryllium; Doping; AlGaAs; Photoluminescence

Language: English

Document Type: Research article

DOI: 10.1016/S0022-0248(98)01068-9

Affiliations: 1: School of Electrical and Electronics Engineering Block S1, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore

This article is hosted on another website.

You may be required to register, activate a subscription or purchase the article before you can obtain the full text.

Proceed

Back to top

Key:
Free Content - Free Content
New Content - New Content
Subscribed Content - Subscribed Content
Free Trial Content - Free Trial Content
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages.
Page Help Click here for Page Help
Shopping cart
Tools
Sign in






Need to register?
Sign up here
Text size: A | A | A | A