InGaAs single crystal using a GaAs seed grown with the vertical gradient freeze technique

Authors: Nishijima Y.¹; Nakajima K.; Otsubo K.; Ishikawa H.

Source: Journal of Crystal Growth, Volume 197, Number 4, 1 March 1999 , pp. 769-776(8)

Publisher: Elsevier

Keywords: [Physical Astronomy Classification Scheme] 81.10.F; InGaAs; Ternary substrate; VGF growth

Language: English

Document Type: Research article

DOI: 10.1016/S0022-0248(98)00925-7

Affiliations: 1: Fujitsu Laboratories Ltd., 10-1 Morinosato-wakamiya, Atsugi, Japan

Links for this article

http://www.ingentaconnect.com/els/00220248/1999/00000197/00000004/art00925
http://openurl.ingenta.com/content?genre=article&issn=0022-0248&volume=197&issue=4&spage=769&epage=776
http://dx.doi.org/10.1016/S0022-0248(98)00925-7