InGaAs single crystal using a GaAs seed grown with the vertical gradient freeze technique

Authors: Nishijima Y.1; Nakajima K.; Otsubo K.; Ishikawa H.

Source: Journal of Crystal Growth, Volume 197, Number 4, 1 March 1999 , pp. 769-776(8)

Publisher: Elsevier

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Keywords: [Physical Astronomy Classification Scheme] 81.10.F; InGaAs; Ternary substrate; VGF growth

Language: English

Document Type: Research article

DOI: 10.1016/S0022-0248(98)00925-7

Affiliations: 1: Fujitsu Laboratories Ltd., 10-1 Morinosato-wakamiya, Atsugi, Japan

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