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Publisher: Elsevier

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Volume 197, Number 4, 1 March 1999

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Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates
pp. 755-761(7)
Authors: Dumont H.; Auvray L.; Dazord J.; Souliere V.; Monteil Y.; Bouix J.; Ougazzaden A.

Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy
pp. 762-768(7)
Authors: Zheng H.Q.; Radhakrishnan K.; Wang H.; Zhang P.H.; Yoon S.F.; Ng G.I.

InGaAs single crystal using a GaAs seed grown with the vertical gradient freeze technique
pp. 769-776(8)
Authors: Nishijima Y.; Nakajima K.; Otsubo K.; Ishikawa H.

Influence of different V-grooved GaAs substrates on the geometrical shape of InGaAs/GaAs quantum wires
pp. 777-782(6)
Authors: Passaseo A.; Longo M.; Rinaldi R.; Cingolani R.; Catalano M.; Taurino A.; Vasanelli L.

Structural study of metastable (GaAs)1-X(Ge2)X thin films grown by RF magnetron sputtering
pp. 783-788(6)
Authors: Salazar-Hernandez B.; Vidal M.A.; Constantino M.E.; Navarro-Contreras H.; Asomoza R.; Merkulov A.

Size quantization effects in InAs self-assembled islands on InP(001) at the onset of 2D-to-3D transition
pp. 789-793(5)
Authors: Liu F.-Q.; Wang Z.-G.; Wu J.; Xu B.; Zhou W.; Qian J.-J.

Effect of plastic deformation on photoluminescence of ZnTe bulk monocrystals
pp. 794-798(5)
Authors: Garcia J.A.; Remon A.; Munoz V.; Triboulet R.

MOVPE growth of ZnS on (100)GaAs using dimethylzinc and ditertiarybutyl sulphide precursors
pp. 805-810(6)
Authors: Thiandoume C.; Ka O.; Lusson A.; Gorochov O.

Thermal and solutal Marangoni convection in In-Ga-Sb system
pp. 811-817(7)
Authors: Arafune K.; Hirata A.

Optimum crucible material for growth of Pr2-xCexCuO4 crystal
pp. 818-824(7)
Authors: Kaneko N.; Hidaka Y.; Hosoya S.; Yamada K.; Endoh Y.; Takekawa S.; Kitamura K.

Effect of intercalating indium in WSe2 single crystals
pp. 833-840(8)
Authors: Deshpande M.P.; Patel P.D.; Vashi M.N.; Agarwal M.K.

Growth and characterization of antimony doped tin oxide thin films
pp. 858-864(7)
Authors: Shanthi S.; Subramanian C.; Ramasamy P.

Growth and characterization of large-size bismuth germanate single crystals by low thermal gradient Czochralski method
pp. 865-873(9)
Authors: Anantha Murthy R.V.; Ravikumar M.; Choubey A.; Lal K.; Lyudmila Kharachenko; Shleguel V.; Guerasimov V.

Crystal growth of aluminum tungstate Al2(WO4)3 by the Czochralski method from nonstoichiometric melt
pp. 879-882(4)
Authors: Dabkowski A.; Dabkowska H.A.; Greedan J.E.; Adachi G.; Kobayashi Y.; Tamura S.; Hiaraiwa M.; Imanaka N.

Growth and characterization of Ce-doped LiCaAlF6 single crystals
pp. 896-900(5)
Authors: Shimamura K.; Mujilatu N.; Nakano K.; Baldochi S.L.; Liu Z.; Ohtake H.; Sarukura N.; Fukuda T.

Czochralski growth of rare-earth orthosilicates-Y2SiO5 single crystals
pp. 901-904(4)
Authors: Shoudu Z.; Siting W.; Xingda S.; Haobing W.; Heyu Z.; Shunxing Z.; Jun X.

Self-organized growth of complex oxide Ce:BaTiO3 nano-islands on (100)MgO by pulsed laser ablation
pp. 905-910(6)
Authors: Shi W.; Chen Z.; Liu N.; Zhou Y.; Pan S.

Design and benefits of continuous filtration in rapid growth of large KDP and DKDP crystals
pp. 911-920(10)
Authors: Zaitseva N.; Atherton J.; Rozsa R.; Carman L.; Smolsky I.; Runkel M.; Ryon R.; James L.

Heterogeneous nucleation of calcium phosphate salts at a solid/liquid interface examined by scanning angle reflectometry
pp. 927-938(12)
Authors: Ngankam P.A.; Schaaf P.; Voegel J.C.; Cuisinier F.J.G.

Solid-liquid interface in the growth of a decagonal Al-72Co-16Ni-12 quasicrystal
pp. 963-966(4)
Authors: Guo J.Q.; Sato T.J.; Hirano T.; Tsai A.P.

Growth, etching, polarization and second harmonic generation of potassium lithium tantalate niobate crystals
pp. 1012-1014(3)
Authors: Guan Q.; Hu X.; Wei J.; Wang J.; Tian L.; Cui W.; Liu Y.

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