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Publisher: Elsevier

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Volume 196, Number 1, 1 January 1999

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The growth of epitaxial aluminium on As containing compound semiconductors
pp. 1-12(12)
Authors: Pilkington, S.J.; Missous, M.

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Insensitivity of self-formed quantum dots to substrate surface roughness
pp. 23-25(3)
Authors: Pan, D.; Xu, J.; Towe, E.

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Metal organic vapour phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursors
pp. 33-40(8)
Authors: Pietzonka, I.; Franzheld, R.; Sasz, T.; Benndorf, G.; Schwabe, R.; Handschuh, M.; Gottschalch, V.

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Relation between GaAs surface morphology and incorporation of hexagonal GaN into cubic GaN
pp. 41-46(6)
Authors: Tachibana, H.; Ishido, T.; Ogawa, M.; Funato, M.; Fujita, S.; Fujita, S.

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Synthesis of gallium nitride by ammonia injection into gallium melt
pp. 47-52(6)
Authors: Shibata, M.; Furuya, T.; Sakaguchi, H.; Kuma, S.

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A study of the vacancy-defect distribution in a GaAs/AlxGa1-xAs multi-layer structure grown at low temperature
pp. 53-61(9)
Authors: Fleischer, S.; Surya, C.; Hu, Y.F.; Beling, C.D.; Fung, S.; Smith, T.L.; Moulding, K.M.; Missous, M.

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Miscibility gap calculation for Ga1-xInxNyAs1-y including strain effects
pp. 67-70(4)
Authors: Schlenker, D.; Miyamoto, T.; Pan, Z.; Koyama, F.; Iga, K.

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Synthesis and growth of PbTe crystals at low temperature and their characterization
pp. 71-76(6)
Authors: Munoz, V.; Lasbley, A.; Klotz, S.; Triboulet, R.

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The growth of ZnSe by photo-assisted metalorganic chemical vapor deposition (MOCVD)
pp. 77-82(6)
Authors: Yu, G.; Fan, X.W.; Zhang, J.Y.; Yang, B.J.; Zhao, X.; dezhen; Lu, Y.M.

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Growth of ZnSe single crystal by CVT method with self-moving convection shield
pp. 83-87(5)
Authors: Fujiwara, S.; Namikawa, Y.; Hirota, Y.; Irikura, M.; Matsumoto, K.; Kotani, T.

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Er doping of Si and Si0.88Ge0.12 using Er2O3 and ErF3 evaporation during molecular beam epitaxy A transmission electron microscopy study
pp. 97-110(14)
Authors: Joelsson, K.B.; Hultman, L.; Ni, W.; Cardenas, J.; Svensson, B.G.; Olsson, E.; Hansson, G.V.

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Study on the oxygen concentration reduction in heavily Sb-doped silicon
pp. 111-114(4)
Authors: Liu, C.; Wang, H.; Li, Y.; Wang, Q.; Ren, B.; Xu, Y.; Que, D.

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High temperature superconducting thin films on CaGdAlO4 substrates
pp. 122-125(4)
Authors: Kleptsyn, V.; Guenrikhson, V.; Lisauskas, V.; Butkute, R.; Vengalis, B.; Samojlenkov, S.; Gorbenko, O.; Kaul, A.

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Optical determination of the size distribution of CuCl nanocrystals in NaCl - The Early Stages
pp. 135-140(6)
Authors: Haselhoff, M.; Reimann, K.; Weber, H.

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Structural evolution of lithium niobate deposited on sapphire (0001): from early islands to continuous films
pp. 141-150(10)
Authors: Veignant, F.; Gandais, M.; Aubert, P.; Garry, G.

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Impurity effect of iron(III) on the growth of potassium sulfate crystal in aqueous solution
pp. 156-163(8)
Authors: Kubota, N.; Katagiri, K.; Yokota, M.; Sato, A.; Yashiro, H.; Itai, K.

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The influence of additives on the crystal habit of gibbsite
pp. 174-180(7)
Authors: Seyssiecq, I.; Veesler, S.; Pepe, G.; Boistelle, R.

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Study of some K2W2O7-KGd1-xLnx(WO4 )2 systems to be used for flux growth of doped KGd(WO4)2 single crystals
pp. 181-184(4)
Authors: Manuilov, N.; Nikolov, V.; Gentscheva, G.; Peshev, P.

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