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Publisher: Elsevier

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Volume 194, Number 1, 1 November 1998

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Structural and optical characterization of strained and strain-compensated InGaAsP/InP quantum well laser structures
pp. 8-15(8)
Authors: Henderson, R.; Walters, F.; Reynolds, C.L.; Swaminathan, V.; Luther, L.C.; Salviati, G.; Ferrari, C.

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Mechanism of atomic layer epitaxy of AlAs
pp. 16-24(9)
Authors: Hirose, S.; Yamaura, M.; Yoshida, A.; Ibuka, H.; Hara, K.; Munekata, H.

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Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth
pp. 25-30(6)
Authors: Lu, L.; Zhang, Y.; Yang, G.; Wang, J.; Ge, W.

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Photoluminescence study of InGaAs/InAlAs single and multiple quantum wells
pp. 31-36(6)
Authors: Yang, Q.; Chen, J.; Li, A.

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Preparation and properties of free-standing HVPE grown GaN substrates
pp. 37-42(6)
Authors: Kim, S.T.; Lee, Y.J.; Moon, D.C.; Hong, C.H.; Yoo, T.K.

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Experimental determination and numerical modelling of solid-liquid interface shapes for vertical Bridgman grown GaSb crystals
pp. 43-52(10)
Authors: Boiton, P.; Giacometti, N.; Santailler, J.L.; Duffar, T.; Nabot, J.P.

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Optimum growth and properties of ZnS/GaAs(100) epilayers by hot-wall epitaxy
pp. 61-69(9)
Authors: Nam, S.; O, B.; Lee, K.; Choi, Y.D.

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Morphology variations on inner surface of silica crucibles depending on oxygen concentration in silicon melts
pp. 70-75(6)
Authors: Maeda, S.; Takeuchi, K.; Kato, M.; Abe, K.; Nakanishi, H.; Hoshikawa, K.; Terashima, K.

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Vacancy-type microdefect formation in Czochralski silicon
pp. 76-88(13)
Authors: Voronkov, V.V.; Falster, R.

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Preparation and characterization of Pt/MgO/Si multilayer thin films
pp. 89-93(5)
Authors: Cheng, J.; Meng, X.; Yang, P.; Chu, J.

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Structural characterisation of vapour Zn-diffused waveguides in lithium niobate
pp. 94-100(7)
Authors: Fedorov, V.A.; Korkishko, Y.N.; Vereda, F.; Lifante, G.; Cusso, F.

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Solid-liquid surface energy of pivalic acid
pp. 119-124(6)
Authors: Bayender, B.; Marasli, N.; Cadirli, E.; Sisman, H.; Gunduz, M.

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The Clapeyron effect in succinonitrile: applications to crystal growth
pp. 143-148(6)
Authors: LaCombe, J.C.; Koss, M.B.; Tennenhouse, L.A.; Winsa, E.A.; Glicksman, M.E.

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Estimation of the curvature of the solid-liquid interface during Bridgman crystal growth
pp. 149-155(7)
Authors: Barat, C.; Duffar, T.; Garandet, J.

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On the calculation of specific free energy of step edges in ionic crystals
pp. 156-159(4)
Authors: Rubbo, M.; Aquilano, D.

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