Publisher: Elsevier

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Volume 193, Number 4, 15 October 1998

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In situ RHEED, AFM, and REM investigations of the surface recovery of MBE-grown GaAs(001)-layers during growth interruptions
pp. 451-459(9)
Authors: Franke, T.; Kreutzer, P.; Zacher, T.; Naumann, W.; Anton, R.

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MOVPE growth of C-doped GaAs/AlAs DBRs for wafer fusion
pp. 460-469(10)
Authors: Amano, C.; Tateno, K.; Takenouchi, H.; Ohiso, Y.

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Self-assembled InP islands grown on GaP substrate
pp. 470-477(8)
Authors: Nabetani, Y.; Sawada, K.; Furukawa, Y.; Wakahara, A.; Noda, S.; Sasaki, A.

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Microstructure evolution of GaN buffer layer on MgAl2O4 substrate
pp. 478-483(6)
Authors: Yang, H.; Han P.-D.; Cheng, L.; Zhang, Z.; Duan, S.; Teng, X.

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The growth and characterization of GaN grown on an Al2O3 coated (001) Si substrate by metalorganic vapor phase epitaxy
pp. 484-490(7)
Authors: Wang, L.; Liu, X.; Zan, Y.; Wang, D.; Lu, D.; Wang, Z.; Wang, Y.; Cheng, L.; Zhang, Z.

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Characteristics of Si-doped GaN compensated with Mg
pp. 491-495(5)
Authors: Leem J.-Y.; Lee, C.; Lee, J.; Kyu Noh, S.; Kwon, Y.; Ryu, Y.; Son, S.

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The interfacial layer formation of the Ag/InP heterointerfaces
pp. 496-500(5)
Authors: Kim, T.W.; Lee, D.U.; Yoon, Y.S.

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OMVPE growth of undoped and Si-doped GaAs epitaxial layers on Ge
pp. 501-509(9)
Authors: Modak, P.; Kumar Hudait, M.; Hardikar, S.; Krupanidhi, S.B.

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In0.49Ga0.51P growth on pre-patterned GaAs substrates by chemical beam epitaxy
pp. 510-515(6)
Authors: de Castro, M.P.P.; Frateschi, N.C.; Bettini, J.; de Carvalho, M.M.

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Hillocks formation during the molecular beam epitaxial growth of ZnSe on GaAs substrates
pp. 528-534(7)
Authors: Lopez-Lopez, M.; Guillen-Cervantes, A.; Rivera-Alvarez, Z.; Hernandez-Calderon, I.

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Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy
pp. 535-540(6)
Authors: Liu, J.P.; Kong, M.Y.; Li, J.P.; Liu, X.F.; Huang, D.D.; Sun, D.Z.

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Characterization of a notable historic gem diamond showing the alexandrite effect
pp. 577-584(8)
Authors: Lu, T.; Liu, Y.; Shigley, J.; Moses, T.; Reinitz, I.M.

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Selective edge-growth with controlled ferroelectric-domain structure by liquid-phase epitaxy
pp. 605-609(5)
Authors: Kawaguchi, T.; Imaeda, M.; Fukuda, T.

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Viscosity and density of BaB2O4, BaB2O4-NaF and BaB2O4-Na2O melts
pp. 610-614(5)
Authors: Hong, X.; Lu, K.; Li, L.; Tang, D.

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The growth of potassium lithium niobate (KLN) with low Nb2O5 content
pp. 615-622(8)
Authors: Kang, G.Y.; Yoon, J.K.

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Three-dimensional modeling of Bi12GeO20 using the float zone technique
pp. 623-635(13)
Authors: Saghir, M.Z.; Islam, M.R.; Maffei, N.; Quon, D.H.H.

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Heterogeneous nucleation of n-alcohol crystals from solution assisted by vapor-deposited thin films of fatty acids
pp. 641-647(7)
Authors: Takiguchi, H.; Iida, K.; Ueno, S.; Yano, J.; Sato, K.

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Antibody recognition of specific crystal faces of 1,4-dinitrobenzene
pp. 656-664(9)
Authors: Bromberg, R.; Kessler, N.; Addadi, L.

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Mechanism of ionic strength dependence of crystal growth rates in a subtilisin variant - An Introduction
pp. 665-673(9)
Authors: Travis Gallagher, D.; Pan, Q.; Gilliland, G.L.

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Organic nonlinear optical crystals of benzoyl glycine
pp. 674-678(5)
Authors: Nagaraja, H.S.; Upadhyaya, V.; Mohan Rao, P.; Sreeramana Aithal, P.; Bhat, A.P.

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The growth of extremely thin crystals: a Monte Carlo study and an application to n-paraffins
pp. 679-691(13)
Authors: van Hoof, W.J.P.v.E.; Schoutsen, M.

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Measurement of interfacial undercooling in a dilute Pb-Sn alloy near the regime of morphological instability
pp. 692-700(9)
Authors: Sen, S.; Dhindaw, B.K.; Curreri, P.A.; Peters, P.; Kaukler, W.F.

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Planar to cellular transition in the system succinonitrile-acetone during directional solidification of a bulk sample
pp. 701-711(11)
Authors: Kauerauf, B.; Zimmermann, G.; Murmann, L.; Rex, S.

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Heat diffusion anisotropy in dendritic growth: - phase field simulations and experiments in liquid crystals
pp. 712-719(8)
Authors: Gonzalez-Cinca, R.; Ramrez-Piscina, L.; Casademunt, J.; Hernandez-Machado, A.; Toth-Katona, T.; Borzsonyi, T.; Buka, A.

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Synthesis of pure pentlandite in bulk
pp. 728-731(4)
Authors: Drebushchak, V.A.; Kravchenko, T.A.; Pavlyuchenko, V.S.

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Effect of applied voltage on aggregate structure of microcrystals in vacuum-deposited films of mesogens
pp. 732-737(6)
Authors: Nagai, Y.; Tsuboi, Y.; Miyasaka, H.; Itaya, A.

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