Publisher: Elsevier

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Volume 193, Number 1, 15 September 1998

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Effect of P precursor on surface structure and ordering in GaInP
pp. 1-8(8)
Authors: Hsu, T.C.; Hsu, Y.; Stringfellow, G.B.

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Atmospheric pressure MOCVD growth of crystalline InP in opals
pp. 9-15(7)
Authors: Yates, H.M.; Pemble, M.E.; Mguez, H.; Blanco, A.; Lopez, C.; Meseguer, F.; Vazquez, L.

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Ammonium sulfide combined etching (ACE): an effective treatment for reducing impurities prior to MOVPE InP regrowth in a process using hydrocarbon gas reactive ion etching (RIE)
pp. 16-22(7)
Authors: Yamamoto, N.; Kishi, K.; Kondo, Y.; Matsumoto, S.; Iga, R.; Kadota, Y.; Okamoto, H.; Mawatari, H.

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The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy
pp. 23-27(5)
Authors: Liu, X.; Lu, D.; Wang, L.; Wang, X.; Wang, D.; Lin, L.

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Novel In0.49Ga0.51P/(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy
pp. 28-32(5)
Authors: Chen, J.X.; Li, A.Z.; Yang, Q.K.; Lin, C.; Ren, Y.C.; Jin, S.R.; Li, C.C.; Qi, M.

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Lattice parameter of ZnSe crystals grown from melt under Zn partial pressure
pp. 39-42(4)
Authors: Udono, H.; Kikuma, I.; Okada, Y.

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Study of the growth mechanism of ZnCdSe by MBE using the mass spectrometer
pp. 43-49(7)
Authors: Okuyama, H.; Kijima, S.; Sanaka, Y.; Ishibashi, A.

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Calculation of lateral distribution of lattice constant for horizontal MOVPE grown quaternary alloys
pp. 50-54(5)
Authors: Xu, J.; Cheng, X.J.; Behres, A.; Heime, K.

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Crystal growth and characterization of the spin-ladder compound (Sr,Ca)14Cu24O41
pp. 55-60(6)
Authors: Ammerahl, U.; Dhalenne, G.; Revcolevschi, A.; Berthon, J.; Moudden, H.

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In situ observation of melting/dissolution, nucleation and growth of NdBa2Cu3Ox by high temperature optical microscopy
pp. 61-70(10)
Authors: Aswal, D.K.; Shinmura, M.; Hayakawa, Y.; Kumagawa, M.

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Kinetics of physical vapor transport at low pressure under microgravity conditions - I. DCMF flight hardware and experimental conditions
pp. 80-89(10)
Authors: Piechotka, M.; Kaldis, E.; Wetzel, G.; Schneider, H.; Buff, W.; Tardy, M.; Stanna, H.

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Investigation of domain evolution in sublimation epitaxy of SiC
pp. 101-108(8)
Authors: Tuominen, M.; Yakimova, R.; Kakanakova-Georgieva, A.; MacMillan, M.F.; Syvajarvi, M.; Janzen, E.

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In situ TEM observation of nickel promoted WS2 thin-film crystallization
pp. 109-113(5)
Authors: Regula, M.; Ballif, C.; Levy, F.

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Aqueous solution epitaxy of CdS layers on CuInSe2
pp. 114-122(9)
Authors: Furlong, M.J.; Froment, M.; Bernard, M.C.; Cortes, R.; Tiwari, A.N.; Krejci, M.; Zogg, H.; Lincot, D.

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Growth of large-sized sapphire boules by temperature gradient technique (TGT)
pp. 123-126(4)
Authors: Jianwei, X.; Yongzong, Z.; Guoqing, Z.; Xu; Peizhen, D.; Xu

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-LiAlO2 single crystal: a novel substrate for GaN epitaxy
pp. 127-132(6)
Authors: Ke, X.; Jun, X.; Peizhen, D.; Yongzong, Z.; Guoqing, Z.; Rongsheng, Q.; Zujie, F.

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Thermal chemical vapor deposition of copper from hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane: kinetic studies
pp. 133-147(15)
Authors: Naik, M.B.; Lakshmanan, S.K.; Wentorf, R.H.; Reeves, R.R.; Gill, W.N.

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Liquid phase epitaxial growth of GaP layers on textured GaP (111)B substrates
pp. 148-155(8)
Authors: Mei, X.; Ruda, H.E.; Berdiskihk, T.; Buchanan, M.

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Kinetics of calcium sulfate formation in aqueous media: effect of organophosphorus compounds
pp. 156-163(8)
Authors: Klepetsanis, P.G.; Koutsoukos, P.G.

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Growth promoting effect of organic impurities on growth kinetics of KAP and KDP crystals
pp. 164-173(10)
Authors: Kuznetsov, V.A.; Okhrimenko, T.M.; Rak, M.

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Dendritic growth in viscous solutions containing organic molecules
pp. 174-181(8)
Authors: Kubnek, R.; Hozman, J.; Varenka, J.

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Effects of Ca addition on the formation of octacalcium phosphate and apatite in solution at pH 7.4 and at 37oC
pp. 182-188(7)
Authors: Iijima, M.; Kamemizu, H.; Wakamatsu, N.; Goto, T.; Doi, Y.; Moriwaki, Y.

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Post-nucleation conversion of an air bubble to clathrate air-hydrate crystal in ice
pp. 197-218(22)
Authors: Salamatin, A.N.; Hondoh, T.; Uchida, T.; Lipenkov, V.Y.

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Visualization of convection in a simulated gradient freeze cell during centrifugation
pp. 219-229(11)
Authors: Skudarnov, P.V.; Regel, L.L.; Wilcox, W.R.

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Continuous solidification of photovoltaic multicrystalline silicon from an inductive cold crucible
pp. 230-240(11)
Authors: Dour, G.; Ehret, E.; Laugier, A.; Sarti, D.; Marcel; Durand, F.

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Epitaxial growth simulations of CdTe(111)B on Si(001)
pp. 241-251(11)
Authors: Oh, J.; Grein, C.H.

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Equilibrium shape of epitaxially strained crystals (Volmer-Weber case)
pp. 257-270(14)
Authors: Muller, P.; Kern, R.

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