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Publisher: Elsevier

Volume 191, Number 4, 1 August 1998

Optical and structural properties of GaInAs/InP single quantum wells grown by solid-source MBE with a GaP decomposition source
pp. 607-612(6)
Authors: Hofling, E.; Reithmaier, J.P.; Baars, T.; Bayer, M.; Forchel, A.

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OMVPE growth of GaInAsSb in the 2-2.4m range
pp. 631-640(10)
Author: Wang, C.A.

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Gallium diffusion through cubic GaN films grown on GaAs(100) at high-temperature using low-pressure MOVPE
pp. 646-650(5)
Authors: Peng Xu, D.; Yang, H.; Xi Zheng, L.; Jun Wang, X.; Hong Duan, L.; Han Wu, R.

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Morphological instability in InAs/GaSb heterostructures
pp. 651-662(12)
Authors: Twigg, M.E.; Bennett, B.R.; Magno, R.

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Optimization of pre-epitaxial processes to obtain high-quality ZnSe/GaAs heterointerfaces grown in a low-pressure metalorganic vapour-phase epitaxy system
pp. 663-672(10)
Authors: Taudt, W.; Xu, J.; Hardt, A.; Korfer, H.; Liu, Q.; Hamadeh, H.; Lakner, H.; Woitok, J.; Heuken, M.

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Structural defects and compositional uniformity in CdTe and Cd1-xZnxTe crystals grown by a vapour transport technique
pp. 673-678(6)
Authors: Szczerbakow, A.; Domagala, J.; Rose, D.; Durose, K.; Ivanov, V.Y.; Omeltchouk, A.R.

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Optical characteristics of ZnCdSe/ZnSSe single quantum wells
pp. 679-684(6)
Authors: Tsukamoto, H.; Tamamura, K.; Nagai, F.H.; Ikeda, M.

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Photoluminescence study of radiative transitions in ZnTe bulk crystals
pp. 685-691(7)
Authors: Garcia, J.A.; Remon, A.; Munoz, V.; Triboulet, R.

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Mn-doped nanometer-size ZnS clusters in chitosan film matrix prepared by ion-coordination reaction
pp. 692-696(5)
Authors: Xue-yin, J.; Yan, J.; Zhi-lin, Z.; Shao-hong, X.

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Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1-xGex morphologies: a RHEED and TEM study
pp. 697-710(14)
Authors: dentel, D.; Bischoff, J.L.; Kubler, L.; Werckmann, J.; Romeo, M.

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Temperature dependence of density of molten germanium measured by a newly developed Archimedian technique
pp. 711-717(7)
Authors: Nakanishi, H.; Nakazato, K.; Asaba, S.; Abe, K.; Maeda, S.; Terashima, K.

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Czochralski growth of RE3Ga5SiO14 (RE=La, Pr, Nd) single crystals for the analysis of the influence of rare earth substitution on piezoelectricity
pp. 746-753(8)
Authors: Sato, J.; Takeda, H.; Morikoshi, H.; Shimamura, K.; Rudolph, P.; Fukuda, T.

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Flux growth and luminescence of Ho:YAl3(BO3)4 and PrAl3(BO3)4 crystals - Condens. Matter
pp. 767-773(7)
Authors: Koporulina, E.V.; Leonyuk, N.I.; Hansen, D.; Bray, K.L.

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Growth of sapphire shaped crystals with continuously modulated dopants
pp. 779-782(4)
Authors: Kurlov, V.N.; Belenko, S.V.

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Prediction of the growth morphology of aminoacid crystals in solution - Appl. Phys.
pp. 791-802(12)
Authors: Reese, J.M.; Thompson, D.S.; Lin, C.H.; Gabas, N.; Canselier, J.P.; Pepe, G.

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Temperature-dependent solubility of selected proteins
pp. 820-826(7)
Authors: Christopher, G.K.; Phipps, A.G.; Gray, R.J.

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Crystal growth rates of tricaprin and trilaurin under high pressures
pp. 827-833(7)
Authors: Yokoyama, C.; Tamura, Y.; Nishiyama, Y.

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Solid state structures in spin-coated assemblies of oligo(cyclohexylidene) oxime derivatives and (partly) saturated analogues: an atomic force microscopy study - Crystal Growth
pp. 834-845(12)
Authors: ten Grotenhuis, E.; Marsman, A.W.; Hoogesteger, F.J.; Cornelis van Miltenburg, J.; van der Eerden, J.P.; Jenneskens, L.W.; Smeets, W.J.J.; Spek, A.L.

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Morphology of orthorhombic n-paraffin crystals: the influence of multiple connected nets
pp. 846-860(15)
Authors: Grimbergen, R.F.P.; van Hoof, P.J.C.M.; Meekes, H.; Bennema, P.

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Morphology of orthorhombic n-paraffin crystals: a comparison between theory and experiments
pp. 861-872(12)
Authors: van Hoof, P.J.C.M.; Grimbergen, R.F.P.; Meekes, H.; van Enckevort, W.J.P.; Bennema, P.

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Characterization of LaB6-ZrB2 eutectic composite grown by the floating zone method
pp. 873-878(6)
Authors: Chen C.-M.; Zhang, L.T.; Zhou, W.C.

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Three-dimensional simulations of freckles in binary alloys
pp. 879-888(10)
Authors: Felicelli, S.D.; Heinrich, J.C.; Poirier, D.R.

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Nearly diffusion controlled segregation of tellurium in GaSb
pp. 904-908(5)
Authors: Dutta, P.S.; Ostrogorsky, A.G.

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