Publisher: Elsevier

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Volume 191, Number 3, 15 July 1998

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Foreign atom thermodynamics in liquid gallium arsenide
pp. 303-312(10)
Authors: Chiu, J.; Robinovitch, S.N.; Oates, W.A.; Wenzl, H.

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Heavily doped p-type AlGaInP grown by metalorganic chemical vapor deposition
pp. 313-318(6)
Authors: Herzog, W.; Diet, S.; Suter, E.; Mayzus, P.; Leonard, T.R.; Muller, C.; Wu, J.Z.; Epstein, M.; Bauhuis, G.J.; Hageman, P.R.; Larsen, P.K.

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Growth mechanisms of III-V compounds by atomic hydrogen-assisted epitaxy
pp. 319-331(13)
Authors: LaPierre, R.R.; Robinson, B.J.; Thompson, D.A.

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Ligand exchange reactions in InGaAs metalorganic vapor-phase epitaxy
pp. 332-340(9)
Authors: Kappers, M.J.; Warddrip, M.L.; Hicks, R.F.

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Surface morphology and growth rate variation of InP on patterned substrates using tertiarybutylphosphine
pp. 341-346(6)
Authors: Xu, X.G.; Giesen, C.; Hovel, R.; Heuken, M.; Heime, K.

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Growth of self-assembled InAs and InAsxP1-x dots on InP by metalorganic vapour phase epitaxy - Methods and Applications
pp. 347-356(10)
Authors: Carlsson, N.; Junno, T.; Montelius, L.; Pistol, M.; Samuelson, L.; Seifert, W.

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Substrate orientation effect on Zn -doping in GaAs grown by metal organic vapour-phase epitaxy
pp. 357-360(4)
Authors: Li, G.; Prince, K.E.; Petravic, M.; Chua, S.J.; Jagadish, C.

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Growth and transport properties of InAs thin films on GaAs
pp. 361-364(4)
Authors: Hongwei, Z.; Yiping, Z.; Hongmei, W.; Jianrong, D.; Zhanping, Z.; Liang, P.; Meiying, K.

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Floating-zone and floating-solution-zone growth of GaSb under microgravity - Growth, Properties and Applications 12
pp. 365-376(12)
Authors: Croll, A.; Kaiser, T.; Schweizer, M.; Danilewsky, A.N.; Lauer, S.; Tegetmeier, A.; Benz, K.W.

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Characterization of semi-insulating CdTe crystals grown by horizontal seeded physical vapor transport
pp. 377-385(9)
Authors: Arampatzis, A.; Bruggemann, G.; Chattopadhyay, K.; Feth, S.; Chen, H.; Burger, A.; Su, C.

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Analysis of thin film polysilicon on graphite substrates deposited in a thermal CVD system
pp. 386-392(7)
Authors: Angermeier, D.; Monna, R.; Slaoui, A.; Muller, J.C.

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Czochralski growth of bulk crystals of Ge1-xSix alloys - II. Si-rich alloys
pp. 393-398(6)
Authors: Taylor, D.; Clive Lee, T.; Yonenaga, I.; Nonaka, M.

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Segregation during the seeding process in the Czochralski growth of GeSi alloys
pp. 399-404(6)
Authors: Yonenaga, I.; Murakami, Y.

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Global analysis of heat transfer in Si CZ furnace with specular and diffuse surfaces
pp. 413-420(8)
Authors: Hahn, S.; Tsukada, T.; Hozawa, M.; Maruyama, S.; Imaishi, N.; Kitagawa, S.

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Hetero-epitaxial growth of CoSi2 thin films on Si(100): - template effects and epitaxial orientations
pp. 430-438(9)
Authors: Buschmann, V.; Rodewald, M.; Fuess, H.; van Tendeloo, G.; Schaffer, C.

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Low-temperature chemical-vapor deposition of 3C-SiC films on Si(100) using SiH4-C2H4-HCl-H2
pp. 439-445(7)
Authors: Gao, Y.; Edgar, J.H.; Chaudhuri, J.; Cheema, S.N.; Sidorov, M.V.; Braski, D.N.

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The role of {100} side faces for lateral growth of tabular silver bromide crystals
pp. 446-454(9)
Authors: Bogels, G.; Meekes, H.; Bennema, P.; Bollen, D.

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Se vapor pressure dependence of the phase diagram of the CuGa1-xInxSe2 system
pp. 455-458(4)
Authors: Matsushita, H.; Takizawa, T.

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X-ray perfection study of Verneuil-grown SrTiO3 crystals
pp. 483-491(9)
Authors: Yoshimura, J.; Sakamoto, T.; Usui, S.; Kimura, S.

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Growth and characterisation of CsLiB6O10 (CLBO) crystals
pp. 492-500(9)
Authors: Ryu, G.; Yoon, C.S.; Han, T.P.J.; Gallagher, H.G.

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Growth and spectrum of a novel birefringent α-BaB2O4 crystal
pp. 517-519(3)
Authors: Guoqing, Z.; Jun, X.; Xingda, C.; Heyu, Z.; Siting, W.; Ke, X.; Peizhen, D.; Fuxi, G.

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Growth of sapphire core-doped fibers
pp. 520-524(5)
Authors: Sung, H.; Hsu, T.; Hsu, C.; Hsu, J.; Kurlov, V.N.; Rossolenko, S.N.; Belenko, S.V.

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Investigation of the unseeded nucleation of gibbsite, Al(OH)3, from synthetic bayer liquors - Basic Principles and Industrial Applications
pp. 525-536(12)
Authors: Hou, F.J.; Lang, S.M.; Hoshaw, S.J.; Reimann, D.A.; Fyhrie, D.P.; Rossiter, D.S.; Fawell, P.D.; Ilievski, D.; Parkinson, G.M.

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Laser seeding for biomolecular crystallization
pp. 537-544(8)
Authors: Bancel, P.A.; Cajipe, V.B.; Rodier, F.; Witz, J.

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Single-crystal growth of the decagonal Al-Ni-Co quasicrystal
pp. 545-552(8)
Authors: Sato, T.J.; Hirano, T.; Tsai, A.P.

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Electron diffraction study on the rise of crystal phase in rare-gas and nitrogen clusters
pp. 553-557(5)
Authors: Kovalenko, S.I.; Solnyshkin, D.D.; Bondarenko, E.A.; Verkhovtseva, E.T.; Eremenko, V.V.

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On the roughening transition of anisotropic and (pseudo) hexagonal lattices - An Introduction
pp. 563-572(10)
Authors: Vogels, L.J.P.; van Hoof, P.J.C.M.; Grimbergen, R.F.P.

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Multiple similarity solutions for solidification and melting
pp. 573-585(13)
Authors: Coriell, S.R.; McFadden, G.B.; Sekerka, R.F.; Boettinger, W.J.

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Etching effect on periodic domain structures of lithium niobate crystals - Appl. Phys.
pp. 589-593(5)
Authors: Bermudez, V.; Caccavale, F.; Sada, C.; Segato, F.; Dieguez, E.

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Characterization of atomic hydrogen-etched HgCdTe surfaces
pp. 594-598(5)
Authors: Ziemer, K.S.; Stinespring, C.D.; Hirsch, L.S.; Myers, T.H.

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