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Publisher: Elsevier

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Volume 191, Number 1, 7 January 1998

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Pyrolysis of tertiarybutylamine alone and with trimethylgallium for GaN growth - Theory and Practice
pp. 1-7(7)
Authors: MacWilliams, B.A.; desJardins, J.D.; Wilson, D.R.; Romero, J.; Chao, E.Y.S.; Liu, Z.; Lee, R.T.; Stringfellow, G.B.

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Wavelength dependence of UV laser selective AlxGa1-xAs growth via adlayer stimulation in OMVPE
pp. 8-17(10)
Authors: Zavras, T.D.; Amis, A.A.; Wankerl, A.; Emerson, D.T.; Cook, M.J.; Shealy, J.R.

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High-resolution X-ray diffraction studies on growth interrupted heterointerfaces grown by metalorganic vapor-phase epitaxy
pp. 18-23(6)
Authors: Ulrich, D.; van Rietbergen, B.; Weinans, H.; Ruegsegger, P.; Takemi, M.; Mihashi, Y.; Shiba, T.; Aiga, M.

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The effects of arsenic pressure on the properties of In1-x-yGaxAlyAs layers grown by molecular beam epitaxy
pp. 24-30(7)
Authors: Yoon, S.F.; Zhang, P.H.; Zheng, H.Q.; Radhakrishnan, K.

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GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method
pp. 31-33(3)
Authors: Li, X.; Sun, D.; Zhang, J.; Kong, M.

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Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy
pp. 34-38(5)
Authors: Voor, M.J.; Khalily, C.; Li, X.; Sun, D.; Zhang, J.; Zhu, S.; Kong, M.

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Growth and characterization of InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
pp. 39-43(5)
Authors: Ning, Y.; Zhou, T.; Zhang, B.; Jiang, H.; Li, S.; Yuan, G.; Tian, Y.; Jin, Y.

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Equilibrium shape and nucleation on InP(001) surfaces: effect of surface steps
pp. 44-50(7)
Authors: Soares, L.S.M.; Cotta, M.A.; Mendonca, C.A.C.; Ito-Landers, K.M.; de Carvalho, M.M.G.

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Formation of CuPt-type ordered (Cd, Zn)Te at CdTe/ZnTe interface
pp. 51-58(8)
Authors: Seok Kwon, M.; Yong Lee, J.

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Growth of zinc selenide single crystal by the modified Piper and Polich sublimation method
pp. 59-64(6)
Authors: Lee, H.; Kim, T.S.; Jeong, T.S.; An, H.G.; Kim, J.Y.; Youn, C.J.; Yu, P.Y.; Hong, K.J.; Lee, H.J.; Shin, Y.J.

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Metalorganic chemical vapor deposition of ZnSe films on glass and GaAs(111) substrates
pp. 65-71(7)
Authors: Prilutsky, B.I.; Isaka, T.; Albrecht, A.M.; Gregor, R.J.; Hahn, B.; Pschorr-Schoberer, E.; Griebl, E.; Kastner, M.; Gebhardt, W.

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Strain relaxation in graded SiGe grown by ultra-high vacuum chemical vapor deposition (UHVCVD)
pp. 72-78(7)
Authors: Wu, H.Z.; Huang, J.Y.; Ye, Z.Z.; Jiang, X.B.; Shou, X.; Que, D.L.

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High quality YBa2Cu3O7 films grown on LaAlO3 by single source pulsed metalorganic chemical vapor deposition
pp. 79-83(5)
Authors: Luo, Z.; An, K.; Abrutis, A.; Senateur, J.P.; Weiss, F.; Bigelyte, V.; Teiserskis, A.; Kubilius, V.; Galindo, V.; Balevicius, S.

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Step structures and dislocations of SiC single crystals grown by modified Lely method - Appl. Phys.
pp. 84-91(8)
Authors: Pai, Y.; Rogers, M.W.; Patton, J.; Cain, T.D.; Hanke, T.A.; Sugiyama, N.; Okamoto, A.; Okumura, K.; Tani, T.; Kamiya, N.

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Chemical synthesis and magnetic properties of nanocrystalline FeMoN2
pp. 92-96(5)
Authors: Lundstrom, R.; Holmlund, P.; Lindberg, L.; Panda, R.N.; Gajbhiye, N.S.

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Effect of nonstoichiometry on conductivity type in Bridgman-grown CuInSe2
pp. 97-107(11)
Authors: Cerveri, P.; Borghese, N.A.; Pedotti, A.; Shukri, Z.A.; Champness, C.H.

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Imperfect low-angle boundaries and fracture in hydrothermally grown berlinite crystals
pp. 108-112(5)
Authors: Riley, P.O.; Kerrigan, D.C.; Morris, R.C.; Chai, B.H.T.

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The growth and phase transitions of epitaxial Pb(Zr0.95Ti0.05)O3 thin films prepared by sputter deposition combined with post-annealing on SrTiO3(100)
pp. 113-118(6)
Authors: Wilson, D.R.; Feikes, J.D.; O'Connor, J.J.; Lu, C.J.; Shen, H.M.; Wang, Y.N.

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Crystal structure of LPE-grown LiNb1-xTaxO3 epitaxial films
pp. 119-124(6)
Authors: Shipkowitz, T.; Rodgers, V.G.J.; Frazin, L.J.; Chandran, K.B.; Kaigawa, K.; Kawaguchi, T.; Imaeda, M.; Sakai, H.; Fukuda, T.

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Fabrication of thin-film waveguide QPM-SHG devices by domain-inverted liquid-phase epitaxy
pp. 125-129(5)
Authors: Kawaguchi, T.; Mizuuchi, K.; Yamamoto, K.; Yoshino, T.; Imaeda, M.; Fukuda, T.

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A study of the optical and mechanical properties of PbWO4 single crystals
pp. 130-134(5)
Authors: Senguttuvan, N.; Mohan, P.; Moorthy Babu, S.; Ramasamy, P.

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Crystal growth of solid solutions based on the YAl3(BO3)4, NdAl3(BO3)4 and GdAl3(BO3)4 borates
pp. 135-142(8)
Authors: Ladd, A.J.C.; Kinney, J.H.; Leonyuk, N.I.; Koporulina, E.V.; Barilo, S.N.; Kurnevich, L.A.; Bychkov, G.L.

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Effect of electrode-materials for electrocrystallization of organic charge-transfer complex (TMTSF)2ClO4
pp. 148-152(5)
Authors: Lerner, A.L.; Kuhn, J.L.; Hollister, S.J.; Anzai, H.; Maki, S.; Takasaki, S.; Tanaka, S.; Nakatsuji, S.i.; Yamada, J.; Nozaki, K.; Negishi, A.; Harusawa, M.

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Crystallization of an unstable molecular compound using a tailor-made additive
pp. 166-168(3)
Authors: Domopoulou, A.; Michaelides, A.; Skoulika, S.; Kovala-demertzi, D.

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Growth of ?-caprolactam crystals from the melt: The influence of cyclohexanone on the {111} and {110} forms
pp. 169-177(9)
Authors: Parlitz, D.; Peschel, T.; Altenmuller, E.; van den Berg, E.P.G.; Bogels, G.; Arkenbout, G.J.

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Seeded supercooled melt growth and polar morphology of organic nonlinear optical crystal, meta-nitroaniline (mNA)
pp. 190-198(9)
Authors: Burr, D.B.; Turner, C.H.; Naick, P.; Forwood, M.R.; Ambrosius, W.; Sayeed Hasan, M.; Pidaparti, R.; Ryu, G.; Yoon, C.S.

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Quantitative study of crystallization kinetics of hen egg-white lysozyme using magnetic orientation
pp. 199-205(7)
Authors: Zhang, X.; Kuo, A.D.; Chaffin, D.B.; Wakayama, N.I.

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Three-dimensional computations of solution hydrodynamics during the growth of potassium dihydrogen phosphate - II. Spin down
pp. 206-224(19)
Authors: Zioupos, P.; Casinos, A.; Yeckel, A.; Zhou, Y.; dennis, M.; derby, J.J.

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Effects of gravity on a free dendrite of NH4Cl grown by dynamic pressure control
pp. 225-233(9)
Authors: Malaviya, P.; Butler, D.L.; Korvick, D.L.; Proch, F.S.; Sawada, T.; Takemura, K.; Shigematsu, K.; Yoda, S.; Kawasaki, K.

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Physical chemistry of the organic analog of metal-metal eutectic and monotectic alloys
pp. 234-242(9)
Authors: Soltz, M.A.; Ateshian, G.A.; Rai, U.S.; Rai, R.N.

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Directional solidification in an aerogel furnace with high resolution optical temperature measurements
pp. 252-260(9)
Authors: Jacobs, C.R.; Yellowley, C.E.; Davis, B.R.; Zhou, Z.; Cimbala, J.M.; Donahue, H.J.; Alkemper, J.; Sous, S.; Stocker, C.; Ratke, L.

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Numerical modelling of the solidification of ductile iron
pp. 261-267(7)
Authors: Liu, J.; Elliott, R.

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Temperature coefficient of surface tension for pure liquid metals
pp. 268-274(7)
Authors: Eustathopoulos, N.; Drevet, B.; Ricci, E.

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Evaluation of nanopipes in MOCVD grown (0001) GaN/Al2O3 by wet chemical etching
pp. 275-278(4)
Authors: Hong, S.K.; Kim, B.J.; Park, H.S.; Park, Y.; Yoon, S.Y.; Kim, T.I.

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High quality GaN grown by a gas-source molecular-beam epitaxy and its electrical property
pp. 279-281(3)
Authors: Stein, M.S.; Thomas, C.D.L.; Feik, S.A.; Wark, J.D.; Clement, J.G.; Yoshida, S.; Suzuki, J.

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The effect of orientation deviation on pattern distortion in epitaxial buried layer on p-type <100> silicon substrate
pp. 282-284(3)
Authors: Li, Y.X.; Ju, Y.L.; Wang, H.M.; Niu, P.J.; Tang, C.C.; Du, J.; Wu, G.H.

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Growth of samarium monosulfide thin films by co-sputtering deposition
pp. 285-289(5)
Authors: Jin, P.; Tazawa, M.; Huang, J.F.; Tanemura, S.

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Floating-zone crystal growth of perovskite manganites with colossal magnetoresistance
pp. 294-297(4)
Authors: Guccioneu, J.M.; Motabarzadeh, I.; Zahalak, G.I.; Kloc, C.; Cheong, S.; Matl, P.

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