Publisher: Elsevier

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Volume 188, Number 1, 1 June 1998

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Fundamentals of surface step and island formation mechanisms
pp. 1-10(10)
Authors: Levenston, M.E.; Carter, D.R.; Swartzentruber, B.S.

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A modified BCF model to quantitatively describe the (100)InP growth rate in chemical beam epitaxy - Theory and Practice
pp. 11-16(6)
Authors: Kingma, I.; van Dieen, J.H.; Looze, M.d.; Toussaint, H.M.; Dolan, P.; Baten, C.T.M.; Verschuren, C.A.; Leys, M.R.; Marschner, T.; vonk, H.; Wolter, J.H.

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MOMBE growth of InGaP on (100) and (411)A GaAs substrates using tertiarybutylphosphine (TBP)
pp. 17-20(4)
Authors: Nussbaum, M.A.; Chaffin, D.B.; Hatatani, S.; Yuasa, K.; Konagai, M.

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A comparison of the transitory periods in GaAs and AlGaAs CBE growth
pp. 21-25(5)
Authors: Hof, A.L.; Hill, D.; Farrell, T.; Joyce, T.B.; Bullough, T.J.

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Striation development in CBE-grown vicinal plane InGaAs layers
pp. 26-31(6)
Authors: Pioletti, D.P.; Rakotomanana, L.R.; Benvenuti, J.; Leyvraz, P.; Giannakopoulos, K.P.; Goodhew, P.J.

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MOMBE and characterization of InAs and (Al,Ga)Sb
pp. 32-38(7)
Authors: Valero-Cuevas, F.J.; Zajac, F.E.; Burgar, C.G.; Ungermanns, C.; Hardtdegen, H.; Matt, M.; Forster, A.; Ahe, M.v.d.; Carius, R.; Schmidt, R.; Luth, H.

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Low-temperature laser assisted CBE-growth of AlGaAs
pp. 39-44(6)
Authors: Cenk Guler, H.; Berme, N.; Simon, S.R.; Jothilingam, R.; Farrell, T.; Joyce, T.B.; Goodhew, P.J.

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Low-resistance polycrystalline GaAs grown by gas-source molecular beam epitaxy using CBr4
pp. 45-49(5)
Authors: Dolan, P.; Adams, M.A.; Li, N.Y.; Tu, C.W.

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Doping of InSb and InAs using CBr4 during growth by gas source molecular beam epitaxy
pp. 50-55(6)
Authors: Jamsa, T.; Tuukkanen, J.; Jalovaara, P.; Schoenfeld, W.; Antonell, M.J.; Abernathy, C.R.

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Highly carbon-doped Ga0.47In0.53As contact layers grown by using carbontetrabromide in MBE on MOVPE 1.55m GaInAsP/InP MQW laser structures
pp. 56-62(7)
Authors: Atkinson, P.J.; Newberry, W.N.; Atkinson, T.S.; Haut, R.C.; Schneider, J.M.; Bitzer, K.; Rieger, J.; Heinecke, H.

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Flux monitoring and control in epitaxy by chemical vapor deposition
pp. 63-68(6)
Authors: Laursen, B.; Jensen, B.R.; Nemeth, G.; Sjogaard, G.; Pearsall, T.P.; Brown, N.; Ricker, N.L.; Johnson, M.

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A thermodynamic analysis of the growth of III-V compounds with two volatile group V elements by molecular-beam epitaxy
pp. 69-74(6)
Authors: Paul Smutz, W.; Kongsayreepong, A.; Hughes, R.E.; Niebur, G.; Cooney, W.P.; An, K.; Egorov, A.Y.; Kovsh, A.R.; Ustinov, V.M.; Zhukov, A.E.; Kop'ev, P.S.; Tu, C.W.

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Nitridation of InxGa1-xAs by dimethyl-hydrazine (DMHy)
pp. 75-80(6)
Authors: Zheng, N.; Fleisig, G.S.; Escamilla, R.F.; Barrentine, S.W.; Hashimoto, A.; Aiba, Y.; Kurumi, Y.; Yamamoto, A.

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Comparison between monomethyl hydrazine and ECR plasma activated nitrogen as a nitrogen source for CBE growth of GaN
pp. 81-85(5)
Authors: Cowin, S.C.; Yonemura, S.; Yaguchi, T.; Tsuchiya, H.; Shimoyama, N.; Suemasu, T.; Hasegawa, F.

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Chemical beam epitaxy of GaN using triethylgallium and ammonia
pp. 86-91(6)
Authors: Kopperdahl, D.L.; Keaveny, T.M.; Shen, X.Q.; Tanaka, S.; Iwai, S.; Aoyagi, Y.

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GaN growth on sapphire and 6H-SiC by metalorganic molecular beam epitaxy
pp. 92-97(6)
Authors: Hart, J.D.; Cacciola, G.; Schreurs, P.J.G.; Peters, G.W.M.; Yoshimoto, M.; Hatanaka, A.; Itoh, H.; Matsunami, H.

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Strong photoluminescence emission from GaN grown on amorphous silica substrates by gas source MBE
pp. 98-102(5)
Authors: Serina, E.R.; Mockensturm, E.; Mote, C.D.; Rempel, D.; Iwata, K.; Asahi, H.; Asami, K.; Kuroiwa, R.; Gonda, S.

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Band gap energy of GaNAs grown on GaAs(001) substrates by metalorganic molecular-beam epitaxy
pp. 103-106(4)
Authors: Peham, C.; Licka, T.; Mayr, A.; Scheidl, M.; Girtler, D.; Uesugi, K.; Suemune, I.

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Photoconductance measurement on TlInGaP grown by gas source MBE
pp. 107-112(6)
Authors: Uchiyama, T.; Bessho, T.; Akazawa, K.; Koh, H.; Asahi, H.; Fushida, M.; Yamamoto, K.; Takenaka, K.; Asami, K.; Gonda, S.; Oe, K.

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Growth of Tl-containing III-V materials by gas-source molecular beam epitaxy
pp. 113-118(6)
Authors: Antonell, M.J.; Abernathy, C.R.; Sher, A.; Berding, M.; van Schilfgaarde, M.; Sanjuro, A.; Wong, K.

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Nucleation and growth of Ge on Si(111) by MBE with additional atomic hydrogen irradiation studied by scanning tunneling microscopy
pp. 119-124(6)
Authors: Suter, E.; Herzog, W.; Leonard, T.R.; Nguyen, H.; Okada, M.; Muto, A.; Ikeda, H.; Zaima, S.; Yasuda, Y.

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Low temperature epitaxial growth by LEPECVD
pp. 125-130(6)
Authors: Vail, T.P.; Glisson, R.R.; Koukoubis, T.D.; Guilak, F.; Rosenblad, C.; deller, H.R.; Graf, T.; Muller, E.; von Kanel, H.

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Low-temperature reaction of CH4 on Si(100)
pp. 131-136(6)
Authors: Medynsky, A.O.; Holdsworth, D.W.; Sherebrin, M.H.; Rankin, R.N.; Roach, M.R.; Izena, A.; Sakuraba, M.; Matsuura, T.; Murota, J.

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Dynamical approach to the surface reaction of triisobutylgallium (TIBGa) on GaAs(001) by using molecular beam scattering
pp. 137-143(7)
Authors: Tam, A.S.M.; Catherine Sapp, M.; Roach, M.R.; Cui, J.; Ozeki, M.; Ohashi, M.

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Reactivity patterns of stibine and trisdimethylaminoantimony precursors for chemical beam epitaxial growth and etching
pp. 144-151(8)
Authors: Lucchetti, L.; Cappozzo, A.; Cappello, A.; Croce, U.D.; Foord, J.S.; Howard, F.P.; McGrady, G.S.; Davies, G.J.

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Growth of InP using TBP and DTBP in metalorganic molecular beam epitaxy
pp. 152-158(7)
Authors: Reihsner, R.; Menzel, E.J.; Ritter, D.; Keidler, M.; Heinecke, H.

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Reaction models for the homoepitaxial and selected area growth of GaSb by MOMBE
pp. 159-167(9)
Authors: Day, J.S.; Dumas, G.A.; Murdoch, D.J.; Foord, J.S.; Howard, F.P.; Davies, G.J.

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Planar selective area growth of DH laser structures using hydrides, tertiarybutyl and ditertiarybutyl group V precursors in MOMBE
pp. 168-175(8)
Authors: Keidler, M.; Ritter, D.; Baumeister, H.; Druminski, M.; Heinecke, H.

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Beam geometrical modelling of CBE on nonplanar substrate
pp. 176-182(7)
Authors: Kim, K.; Jurnalov, C.D.; Lightner, D.J.; Webb, M.J.; Lee, R.A.; An, K.; Jahan, D.; Alexandre, F.; Benchimol, J.L.

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Dopant incorporation behaviour during MOMBE growth of InP on (100), {111} and nonplanar surfaces
pp. 183-190(8)
Authors: MacWilliams, B.A.; Hoffman, A.H.; Savilonis, B.J.; Marheineke, B.; Veuhoff, E.; Heinecke, H.

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Vertical stacking of strained InGaAs/GaAs quantum wires by chemical beam epitaxy
pp. 191-196(6)
Authors: Meijer, K.; Grootenboer, H.J.; Koopman, H.F.J.M.; van der Linden, B.J.J.J.; Huijing, P.A.; Kim S.-B.; Ro, J.; Lee, E.

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Nanoscale Si selective homoepitaxial growth observed by scanning tunneling microscopy
pp. 197-204(8)
Authors: Bouilland, S.; Loslever, P.; Fujita, K.; Watanabe, H.; Ichikawa, M.

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Surface-roughening processes in GaAs MBE studied by in situ scanning electron microscopy
pp. 205-210(6)
Authors: Turvey, M.T.; Tanahashi, K.; Kawamura, Y.; Inoue, N.; Homma, Y.; Osaka, J.

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Reflectance anisotropy spectroscopy studies of the growth of carbon-doped GaAs by chemical beam epitaxy
pp. 211-219(9)
Authors: Leijnse, J.N.A.L.; Joyce, T.B.; Farrell, T.; Davidson, B.R.

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Mapping of Bragg-surface diffraction of InP/GaAs(100) structure
pp. 220-224(5)
Authors: Lespessailles, E.; Jullien, A.; Eynard, E.; Harba, R.; Jacquet, G.; Ildefonse, J.P.; Ohley, W.; Benhamou, C.L.; Avanci, L.H.; Hayashi, M.A.; Cardoso, L.P.; Morelhao, S.L.; Riesz, F.; Rakennus, K.; Hakkarainen, T.

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Spatially resolved characterization of material composition and free carrier concentration by micro-Raman spectroscopy at surface selectively grown layers
pp. 225-230(6)
Authors: Limmer, W.; Gerster, J.; Aigle, M.; Porsche, J.; Schneider, J.M.; Marheineke, B.; Heinecke, H.; Sauer, R.

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Potential of MOMBE/CBE for the production of photonic devices in comparison with MOVPE - Appl. Phys.
pp. 231-246(16)
Authors: Iatridis, J.C.; Setton, L.A.; Foster, R.J.; Rawlins, B.A.; Weidenbaum, M.; Mow, V.C.; Veuhoff, E.

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Element incorporation in GaInAsP for uniform large area MOMBE
pp. 247-254(8)
Authors: Koh, T.J.; Herzog, W.; Popp, M.; Baumeister, H.; Veuhoff, E.; Heinecke, H.

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Gas-source MBE of GaInNAs for long-wavelength laser diodes
pp. 255-259(5)
Authors: Kondow, M.; Kitatani, T.; Larson, M.C.; Nakahara, K.; Uomi, K.; Inoue, H.

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CBE growth of 2%-strained InAsP MQWs for 1.5m wavelength laser diodes
pp. 260-265(6)
Authors: Sarkar, A.; Jayaraman, G.; Sugiura, H.; Ogasawara, M.; Mitsuhara, M.; Itoh, M.; Kondo, Y.

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GRINSCH GaInAsP MQW laser structures grown by MOMBE
pp. 266-274(9)
Authors: Speers, R.A.; Paloski, W.H.; Kuo, A.D.; Baumeister, H.; Veuhoff, E.; Popp, M.; Heinecke, H.

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Chemical beam epitaxy of integrated 1.55m lasers on exact and misoriented (100)-InP substrates
pp. 275-280(6)
Authors: Rohlmann, A.; Bergmann, G.; Graichen, F.; Mayer, H.; Nutsch, A.; Dahlheimer, B.; Dohr, N.; Kratzer, H.; Lukas, R.; Torabi, B.; Trankle, G.; Abstreiter, G.; Weimann, G.

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MOMBE grown GaInAsP (g=1.05/1.15m) waveguide for laser integrated photonic ICs
pp. 281-287(7)
Authors: Kunzel, H.; Gibis, R.; Kizuki, H.; Albrecht, P.; Ebert, S.; Harde, P.; Malchow, S.; Kaiser, R.

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Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy
pp. 288-294(7)
Authors: Arbogast, K.B.; Margulies, S.S.; Verschuren, C.A.; Harmsma, P.J.; Oei, Y.S.; Leys, M.R.; vonk, H.; Wolter, J.H.

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InAsP/InGaAsP periodic gain structure for 1.5 m vertical cavity surface emitting laser applications
pp. 295-299(5)
Authors: Stump, D.M.; Hart, V.G.; Tuttle, S.L.; Behrend, J.; Carlin, J.F.; Sirbu, A.V.; Berseth, C.A.; Rudra, A.; Kapon, E.

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Evaluation of InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy
pp. 300-306(7)
Authors: Taylor, D.; Rudra, A.; Sagalowicz, L.; Leifer, K.; Behrend, J.; Berseth, C.; dehaese, O.; Carlin, J.F.; Kapon, E.

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Structural dependence of optical bistability of In0.52Al0.48As/InP type II MQW diodes grown by gas source molecular beam epitaxy
pp. 307-310(4)
Authors: Young, R.P.; Marteniuk, R.G.; Kawamura, Y.; Yoshimatsu, K.; Kamada, A.; Iwamura, H.; Inoue, N.

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Chemical beam epitaxy for high-efficiency InP solar cells
pp. 311-316(6)
Authors: Duda, G.N.; Heller, M.; Albinger, J.; Schulz, O.; Schneider, E.; Claes, L.; Vilela, M.F.; Freundlich, A.; Monier, C.; Newman, F.; Aguilar, L.

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Multiple quantum well compressive strained heterostructures for low driving power all-optical waveguide switches
pp. 317-322(6)
Authors: Sumner, D.R.; Turner, T.M.; Igloria, R.; Urban, R.M.; Galante, J.O.; Rigo, C.; Gastaldi, L.; Campi, D.; Faustini, L.; Coriasso, C.; Cacciatore, C.; Soldani, D.

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Enhanced no-phonon transition in indirect GaAsP/GaP quantum wells by insertion of monolayer AlP for electron localization
pp. 323-327(5)
Authors: Hurwitz, D.E.; Foucher, K.C.; Sumner, D.R.; Andriacchi, T.P.; Rosenberg, A.G.; Galante, J.O.; Sugita, T.; Usami, N.; Shiraki, Y.

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Optical and electrical properties of InAlAs/AlAsSb type II quantum well structures grown by molecular beam epitaxy
pp. 328-331(4)
Authors: Wang, X.; Maurin, M.; Mazet, F.; Maia, N.D.C.; Voinot, K.; Verriest, J.P.; Fayet, M.; Yoshimatsu, K.; Kawamura, Y.; Kurisu, H.; Kamada, A.; Naito, H.; Inoue, N.

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Photocurrent and photoluminescence spectroscopy of InAsxP1-x/InP strained quantum wells grown by chemical beam epitaxy
pp. 332-337(6)
Authors: Chaudhry, H.R.; Bukiet, B.; Siegel, M.; Findley, T.; Ritter, A.B.; Guzelsu, N.; Monier, C.; Vilela, M.F.; Serdiukova, I.; Freundlich, A.

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Thermal stability of InP-based structures for wafer fused laser diodes
pp. 338-342(5)
Authors: Wolchok, J.C.; Hull, M.L.; Howell, S.M.; Syrbu, A.V.; Behrend, J.; Fernandez, J.; Carlin, J.F.; Berseth, C.; Iakovlev, V.P.; Rudra, A.; Kapon, E.

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Potential and prospects of CBE technology compared to MBE as production tool for microwave devices
pp. 343-348(6)
Authors: Chou, L.; Draganich, L.F.; Garcia, J.C.

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CBE growth of carbon doped InGaAs/InP HBTs for 25Gbit/s circuits
pp. 349-354(6)
Authors: Nagano, A.; Ishige, Y.; Fukashiro, S.; Benchimol, J.L.; Mba, J.; Duchenois, A.M.; Sermage, B.; Launay, P.; Caffin, D.; Meghelli, M.; Juhel, M.

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AlGaAs/GaAs HBTs with extrinsic base regrowth
pp. 355-358(4)
Authors: Lai, W.M.; Gu, W.Y.; Mow, V.C.; Hsin, Y.M.; Li, N.Y.; Tu, C.W.; Asbeck, P.M.

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Room temperature operation of GaxIn1-xP/Ga0.47In0.53As resonant tunneling diodes
pp. 359-362(4)
Authors: Martnez, M.; Aliabadi, M.H.; Power, H.; Cohen, G.M.; Ritter, D.

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Formation of InAs quantum dots by metalorganic molecular beam epitaxy using trisdimethylaminoarsenic and bisdimethylaminoarsenicchloride
pp. 363-369(7)
Authors: Beynnon, B.D.; Fleming, B.C.; Sato, J.; Asahi, H.; Tashima, T.; Hidaka, K.; Yamamoto, K.; Asami, K.; Gonda, S.

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In situ composition control of self-organized InGaAs dots
pp. 370-376(7)
Authors: Haut, T.L.; Hull, M.L.; Howell, S.M.; Ozasa, K.; Aoyagi, Y.

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Formation of GaAs island by Ga-droplet-induced chemical beam epitaxy
pp. 377-382(6)
Authors: Yerby, S.A.; Bay, B.K.; Toh, E.; McLain, R.F.; Drews, M.J.; Ro J.-R.; Kim, S.; Lee, E.

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Self-organized InAs/GaAs quantum dots grown on (100) misoriented substrates by molecular beam epitaxy
pp. 383-386(4)
Authors: Ross Ethier, C.; Steinman, D.A.; Zhang, X.; Karpik, S.R.; Ojha, M.; Chen, M.; Harris Liao, M.C.; Lin H.-H.

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Growth of strained GaAs islands on (001) GaP: - a RHEED study of quantum wire formation
pp. 387-391(5)
Authors: Fleming, B.C.; Huston, D.R.; Krag, M.H.; Sugihara, S.; Jonas Ohlsson, B.; Miller, M.S.

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