Skip to main content

Publisher: Elsevier

Volume 187, Number 3, 15 May 1998

In situ decomposition study of GaN thin films
pp. 329-332(4)
Authors: dennerlein, J.T.; Diao, E.; Mote, C.D.; Rempel, D.M.; Pisch, A.; Schmid-Fetzer, R.

Favourites:
ADD

Formation of nanostructured surfaces during molecular beam epitaxy on square-shaped hole and mesa patterns on GaAs(311)A substrates
pp. 333-339(7)
Authors: Couteau, B.; Hobatho, M.; Darmana, R.; Brignola, J.; Arlaud, J.; Niu, Z.C.; Notzel, R.; Schonherr, H.P.; Fricke, J.; Daweritz, L.; Ploog, K.H.

Favourites:
ADD

Vapor phase epitaxy growth of GaN on pulsed laser deposited ZnO buffer layer
pp. 340-346(7)
Authors: Ueda, T.; Huang, T.; Spruytte, S.; Lee, H.; Yuri, M.; Itoh, K.; Baba, T.; Harris, J.S.

Favourites:
ADD

Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
pp. 347-354(8)
Authors: Alexandre, F.; Parillaud, O.; Nguyen, D.C.; Azoulay, R.; Quillec, M.; Bouchoule, S.; Le Mestreallan, G.; Juhel, M.; Le Roux, G.; Rao, E.V.K.

Favourites:
ADD

Diffusion mobility and defect analysis in GaSb
pp. 355-362(8)
Authors: Mimkes, J.; Sestakova, V.; Nassr, K.M.; Lubbers, M.; Stepanek, B.

Favourites:
ADD

Characterization of CdTe substrates and MOCVD Cd1-xZnxTe epilayers by Raman, photoluminescence and X-ray diffraction techniques
pp. 367-372(6)
Authors: Miller, J.A.; Melissa Gross, M.; Levy, M.; Amir, N.; Khanin, E.; Muranevich, A.; Nemirovsky, Y.; Beserman, R.

Favourites:
ADD

HWE growth and evaluation of CdTe epitaxial films on GaAs
pp. 373-379(7)
Authors: Taylor, M.; Tanner, K.E.; Freeman, M.A.R.; Wang, J.F.; Kikuchi, K.; Koo, B.H.; Ishikawa, Y.; Uchida, W.; Isshiki, M.

Favourites:
ADD

CdS thin-films deposited by a modified chemical-bath deposition method
pp. 380-386(7)
Authors: Vazquez-Luna, J.G.; Lopez Flores, R.B.; Rubin-Falfan, M.; del, C.; Lozada-Morales, R.; Juarez-Santiesteban, H.; Starostenko, O.; Zelaya-Angel, O.; Vigil, O.; Guzman, O.; del Angel, P.; Gonzalez, A.

Favourites:
ADD

Ring depression technique for measuring surface tension of molten germanium
pp. 391-396(6)
Authors: Nakanishi, H.; Nakazato, K.; Asaba, S.; Abe, K.; Maeda, S.; Terashima, K.

Favourites:
ADD

Analysis of gallium nitride growth by gas-source molecular beam epitaxy
pp. 397-401(5)
Authors: Karpov, S.Y.; Makarov, Y.N.; Ramm, M.S.; Talalaev, R.A.

Favourites:
ADD
Favourites:
ADD

Defects and growth mechanisms of AgCl(100) tabular crystals
pp. 410-420(11)
Authors: van Renterghem, W.; Goessens, C.; Schryvers, D.; van Landuyt, J.; Verrept, P.; Bollen, D.; van Roost, C.; de Keyzer, R.

Favourites:
ADD

Structure and chemical order in sputtered epitaxial FePd(001) alloys
pp. 426-434(9)
Authors: Caro, P.; Cebollada, A.; Briones, F.; Toney, M.F.

Favourites:
ADD

Structural analysis of buried conducting CoSi2 layers formed in Si by high-dose Co ion implantation
pp. 435-443(9)
Authors: Galayev, A.A.; Parkhomenko, Y.N.; Chtcherbatchev, K.D.; Podgorny, D.A.; Belogorohov, A.I.; Dieguez, A.; Romano-Rodriguez, A.; Perez-Rodrguez, A.; Morante, J.R.

Favourites:
ADD

Epitaxial growth of body-centered-cubic CoxMn1-x on GaAs(001)
pp. 444-448(5)
Authors: Dong, G.S.; Wu, Y.Z.; Jing, C.; Chen, Y.; Zhu, W.R.; Jin, X.F.; Zhao, H.W.; Lu, M.; Zhai, H.R.; Shen, X.L.; Li, L.

Favourites:
ADD

Physical vapor growth of organic semiconductors
pp. 449-454(6)
Authors: Bigsby, R.J.A.; Auger, D.D.; Jin, Z.M.; Dowson, D.; Hardaker, C.S.; Fisher, J.; Laudise, R.A.; Kloc, C.; Simpkins, P.G.; Siegrist, T.

Favourites:
ADD

Growth of lithium triborate crystals by the TSSG technique
pp. 455-462(8)
Authors: Pidcoe, P.E.; Rogers, M.W.; Kima, H.G.; Kang, J.K.; Lee, S.H.; Chung, S.J.

Favourites:
ADD

Evaluation of infrared thermography as a diagnostic tool in CVD applications - Advances and Applications
pp. 463-473(11)
Authors: Johnson, E.J.; Hyer, P.V.; Culotta, P.W.; Clark, I.O.

Favourites:
ADD

Kinetics of the initial stage of first-order phase transitions
pp. 474-480(7)
Authors: detzik, V.N.; Kukushkin, S.A.; Osipov, A.V.; Kaptelov, E.Y.; Pronin, I.P.

Favourites:
ADD

Growth rates anisotropy of synthetic quartz crystals grown on Z-cut hexagonal seeds and computer simulations of growth process
pp. 481-489(9)
Authors: Iwasaki, H.; Iwasaki, F.; Balitsky, V.S.; Balitskaya, L.V.; Makhina, I.B.

Favourites:
ADD

Control of nucleation in oligonucleotide crystallization by the osmotic dewatering method with kinetic water removal rate control
pp. 490-498(9)
Authors: McMulkin, M.L.; Woldstad, J.C.; Hughes, R.E.; Lee, C.; McEntyre, S.R.; Todd, P.; Schaefer, K.; Kundrot, C.E.

Favourites:
ADD

Effect of microheterogeneity on horse spleen apoferritin crystallization
pp. 499-510(12)
Authors: Thomas, B.R.; Carter, D.; Rosenberger, F.

Favourites:
ADD
Favourites:
ADD

Monitoring solidification of an alloy by thermoelectric effects: results of the MEPHISTO-USMP1 flight experiment
pp. 527-542(16)
Authors: Lehmann, P.; Moreau, R.; Camel, D.; Favier, J.J.

Favourites:
ADD

Convection and segregation during vertical Bridgman growth with centrifugation
pp. 543-558(16)
Authors: Wilcox, W.R.; Regel, L.L.; Arnold, W.A.

Favourites:
ADD

InAs quantum dots in InAlAs matrix on (001)InP substrates grown by molecular beam epitaxy
pp. 564-568(5)
Authors: Kumaresan, S.; Yoganandan, N.; Pintar, F.A.; Li, H.; Wang, Z.; Liang, J.; Xu, B.; Wu, J.; Gong, Q.; Jiang, C.; Liu, F.; Zhou, W.

Favourites:
ADD

Segregation coefficients of impurities in selenium by zone refining
pp. 569-572(4)
Authors: Rostedt, M.; Ekstrom, L.; Broman, H.; Hansson, T.; Su C.-H.; Sha, Y.

Favourites:
ADD

Growth of crystalline LiF on CF4 plasma etched LiNbO3 substrates
pp. 573-576(4)
Authors: Muellner, T.; Reihsner, R.; Mrkonjic, L.; Kaltenbrunner, W.; Kwasny, O.; Schabus, R.; Mittlboeck, M.; Vecsei, V.; Nagata, H.; Mitsugi, N.; Shima, K.; Tamai, M.; Haga, E.M.

Favourites:
ADD

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
X
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more