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Publisher: Elsevier

Volume 187, Number 2, 1 May 1998

Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE
pp. 167-177(11)
Authors: Vennegues, P.; Beaumont, B.; Haffouz, S.; Vaille, M.; Gibart, P.

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Growth characteristics of GaInN on (0001)sapphire by plasma-excited organometallic vapor phase epitaxy
pp. 178-184(7)
Authors: Tokuda, T.; Wakahara, A.; Noda, S.; Sasaki, A.

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Lateral overgrowth and epitaxial lift-off of InP by halide vapor-phase epitaxy
pp. 185-193(9)
Authors: Park, J.; Barnes, P.A.; Tin, C.C.; Allerman, A.A.

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Liquid-phase epitaxial growth of InAsPSb/InAs heterostructure
pp. 194-196(3)
Authors: Yongzhen, W.; Changchun, J.; Guijin, L.

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Dependence of photoluminescence induced by carbon contamination on GeSi structure
pp. 197-202(6)
Authors: Guo, L.W.; Shi, J.J.; Cheng, W.Q.; Li, Y.K.; Huang, Q.; Zhou, J.M.

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High crystalline quality CeO2 buffer layers epitaxied on (1102) sapphire for YBa2Cu3O7 thin films
pp. 211-220(10)
Authors: Castel, X.; Guilloux-Viry, M.; Perrin, A.; Lesueur, J.; Lalu, F.

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Molecular-beam epitaxy of MnAs in the presence of atomic hydrogen
pp. 228-233(6)
Authors: Morishita, Y.; Iida, K.; Tsuboi, A.; Taniguchi, H.; Sato, K.

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Structural study of the plastic deformation in epitaxial Fe/MgO(001) thin films
pp. 245-252(8)
Authors: Snoeck, E.; Ressier, L.; Jaffres, H.; Peyrade, J.P.; Schuhl, A.

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X-ray characterization of Rb exchanged KTP
pp. 259-267(9)
Authors: Raizman, A.; Eger, D.; Oron, M.

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The effect of mineral substrates on the crystallization of lysozyme - a Practical Approach
pp. 268-276(9)
Authors: Kimble, W.L.; Paxton, T.E.; Rousseau, R.W.; Sambanis, A.

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Lysozyme crystal growth and nucleation kinetics
pp. 277-288(12)
Authors: Saikumar, M.V.; Glatz, C.E.; Larson, M.A.

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