Publisher: Elsevier

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Volume 186, Number 4, 7 March 1998

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Growth of InAs nanocrystals embedded in SiO2 films by radio-frequency magnetron cosputtering
pp. 480-486(7)
Authors: Shi, J.; Zhu, K.; Yao, W.; Zhang, L.

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Characterization of InP grown by LEC using glassy carbon, silica and PBN crucibles
pp. 487-493(7)
Authors: de Oliveira, C.E.M.; de Carvalho, M.M.G.; Mendonca, C.A.C.; Miskys, C.R.; Guadalupi, G.M.; Battagliarin, M.; Bueno, M.I.M.S.

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Gallium arsenide growth in a pancake MOCVD reactor
pp. 494-510(17)
Authors: Peskin, A.P.; Hardin, G.R.

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Measurements of aluminum diffusion in molten gallium and indium
pp. 520-527(8)
Authors: Brauer, P.; Muller-Vogt, G.

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Growth of ZnSe on GaAs(110) surfaces by molecular beam epitaxy
pp. 528-534(7)
Authors: Koh, K.W.; Cho, M.W.; Zhu, Z.; Hanada, T.; Yoo, K.H.; Isshiki, M.; Yao, T.

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Microwave synthesis, single crystal growth and characterization of ZnTe
pp. 535-542(8)
Authors: Bhunia, S.; Bose, D.N.

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A photoluminescence study of polycrystalline thin-film CdTe/CdS solar cells
pp. 543-549(7)
Authors: Halliday, D.P.; Eggleston, J.M.; Durose, K.

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Fused quartz dissolution rate in silicon melts: influence of boron addition
pp. 557-564(8)
Authors: Abe, K.; Terashima, K.; Matsumoto, T.; Maeda, S.; Nakanishi, H.

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The use of experiment charts for the fabrication of porous silicon
pp. 565-570(6)
Authors: Benhida, A.; Achargui, N.; Combette, P.; Foucaran, A.

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Preparation of HfB2 and ZrB2 single crystals by the floating-zone method
pp. 582-586(5)
Authors: Otani, S.; Korsukova, M.M.; Mitsuhashi, T.

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Edge-defined film-fed (EFG) growth of rare-earth orthovanadates REVO4 (RE=Y, Gd): interface morphology effect on crystal shape and material properties
pp. 607-611(5)
Authors: Epelbaum, B.M.; Shimamura, K.; Inaba, K.; Satoshi; Kochurikhin, V.V.; Machida, H.; Terada, Y.; Fukuda, T.

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Crystal growth of calcium phosphate on chemically treated titanium
pp. 616-623(8)
Authors: Wen, H.B.; van den Brink, J.; de Wijn, J.R.; Cui, F.Z.; de Groot, K.

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Single crystal growth and characterization of binary stoichiometric and Al-rich Ni3Al
pp. 624-628(5)
Authors: Golberg, D.; demura, M.; Hirano, T.

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