Journal of Crystal Growth

Electrical and optical properties of InP grown at different cracking temperature and V/III ratio using a valve phosphorous cracker cell
pp. 475-479(5)
Authors: Yoon S.F.; Zheng H.Q.; Zhang P.H.; Mah K.W.

Growth of InAs nanocrystals embedded in SiO₂ films by radio-frequency magnetron cosputtering
pp. 480-486(7)
Authors: Shi J.; Zhu K.; Yao W.; Zhang L.

Characterization of InP grown by LEC using glassy carbon, silica and PBN crucibles
pp. 487-493(7)
Authors: de Oliveira C.E.M.; de Carvalho M.M.G.; Mendonca C.A.C.; Miskys C.R.; Guadalupi G.M.; Battagliarin M.; Bueno M.I.M.S.

Gallium arsenide growth in a pancake MOCVD reactor
pp. 494-510(17)
Authors: Peskin A.P.; Hardin G.R.

Application of the shear cell technique to diffusivity measurements in melts of semiconducting compounds: Ga-Sb
pp. 511-519(9)
Authors: Muller-Vogt G.; Koszler R.

Measurements of aluminum diffusion in molten gallium and indium
pp. 520-527(8)
Authors: Brauer P.; Muller-Vogt G.

Growth of ZnSe on GaAs(110) surfaces by molecular beam epitaxy
pp. 528-534(7)
Authors: Koh K.W.; Cho M.W.; Zhu Z.; Hanada T.; Yoo K.H.; Isshiki M.; Yao T.

Microwave synthesis, single crystal growth and characterization of ZnTe
pp. 535-542(8)
Authors: Bhunia S.; Bose D.N.

A photoluminescence study of polycrystalline thin-film CdTe/CdS solar cells
pp. 543-549(7)
Authors: Halliday D.P.; Eggleston J.M.; Durose K.

Measurement of the density and the thermal expansion coefficient of molten silicon using electromagnetic levitation
pp. 550-556(7)
Authors: Langen M.; Hibiya T.; Eguchi M.; Egry I.

Fused quartz dissolution rate in silicon melts: influence of boron addition
pp. 557-564(8)
Authors: Abe K.; Terashima K.; Matsumoto T.; Maeda S.; Nakanishi H.

The use of experiment charts for the fabrication of porous silicon
pp. 565-570(6)
Authors: Benhida A.; Achargui N.; Combette P.; Foucaran A.

Stress and deflection in GaAs/Si layered heterostructures by improved laminate theory
pp. 571-581(11)
Authors: Chen T.-C.; Wu H.-C.

Preparation of HfB₂ and ZrB₂ single crystals by the floating-zone method
pp. 582-586(5)
Authors: Otani S.; Korsukova M.M.; Mitsuhashi T.

Phase diagrams of the (Cu₂Se, CuSe)-CuGaSe₂ system and the crystal growth of CuGaSe₂ by the solution method
pp. 587-593(7)
Authors: Jitsukawa H.; Matsushita H.; Takizawa T.

Reduced optical losses in MOCVD grown lithium niobate thin films on sapphire by controlling nucleation density
pp. 594-606(13)
Authors: Lee S.Y.; Feigelson R.S.

Edge-defined film-fed (EFG) growth of rare-earth orthovanadates REVO₄ (RE=Y, Gd): interface morphology effect on crystal shape and material properties
pp. 607-611(5)
Authors: Epelbaum B.M.; Shimamura K.; Inaba K.; Satoshi Uda; Kochurikhin V.V.; Machida H.; Terada Y.; Fukuda T.

Growth and characterization of pure and Er-doped CsLiB₆O₁₀ single crystals
pp. 612-615(4)
Authors: Bai K.; Jung S.T.

Crystal growth of calcium phosphate on chemically treated titanium
pp. 616-623(8)
Authors: Wen H.B.; van den Brink J.; de Wijn J.R.; Cui F.Z.; de Groot K.

Single crystal growth and characterization of binary stoichiometric and Al-rich Ni₃Al
pp. 624-628(5)
Authors: Golberg D.; Demura M.; Hirano T.

Flow-induced changes of the morphological stability in directional solidification: localized morphologies
pp. 629-647(19)
Authors: Buhler L.; Davis S.H.