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Publisher: Elsevier

Volume 186, Number 1, 1 March 1998

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Morphology and characterization of GaN single crystals grown in a Na flux
pp. 8-12(5)
Authors: Yamane, H.; Shimada, M.; Sekiguchi, T.; DiSalvo, F.J.

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Deep-level states in MOVPE AlGaAs: - the influence of carrier gas
pp. 13-20(8)
Authors: Darmo, J.; Dubecky, F.; Hardtdegen, H.; Hollfelder, M.; Schmidt, R.

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Effects of As2 flux for fabrication of GaAs/AlGaAs quantum wires on V-grooved substrates in molecular beam epitaxy
pp. 27-32(6)
Authors: Sugaya, T.; Nakagawa, T.; Sugiyama, Y.; Yasuhiko; Yonei, K.

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Metalorganic molecular beam epitaxy and etching of AlGaSb using trisdimethylaminoantimony
pp. 33-37(5)
Authors: Yamamoto, K.; Asahi, H.; Hidaka, K.; Satoh, J.; Gonda, S.

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Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE
pp. 38-42(5)
Authors: Wang, H.; Fan, T.; Wu, J.; Zeng, Y.; Dong, J.; Kong, M.

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Spontaneously ordered InAs self-assembled quantum dots grown on GaAs/InP substrate
pp. 43-47(5)
Authors: Wang, B.; Peng, Y.; Zhao, F.; Chen, W.; Shiyong; Gao, C.

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Determination of composition distributions in InP/InGaAs/InP quantum-well structures by X-ray crystal truncation rod scattering and quantum levels
pp. 48-54(7)
Authors: Tabuchi, M.; Fujibayashi, K.; Yamada, N.; Hagiwara, K.; Kobashi, A.; Iguchi, T.; Takeda, Y.; Kamei, H.

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Rapid thermal metal organic chemical vapor deposition of ZnTe
pp. 55-59(5)
Authors: Stolyarova, S.; Amir, N.; Nemirovsky, Y.

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Growth of large ZnSe single crystal by CVT method
pp. 60-66(7)
Authors: Fujiwara, S.; Morishita, H.; Kotani, T.; Matsumoto, K.; Shirakawa, T.

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Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR-IA-4 rocket
pp. 85-94(10)
Authors: Nakamura, S.; Hibiya, T.; Kakimoto, K.; Imaishi, N.; Nishizawa, S.; Hirata, A.; Mukai, K.; Yoda, S.; Morita, T.S.

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RHEED-AES observation of Sb surface segregation during Sb-mediated Si MBE on Si(001)
pp. 95-103(9)
Authors: Kim, K.; Takakuwa, Y.; Abukawa, T.; Kono, S.

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Grown-in point defects and microscopic defect formation in CZ silicon - I. The one-dimensional, steady-state approximation
pp. 113-127(15)
Authors: Tiller, W.A.; Friedman, M.; Shaw, R.; Cuendet, N.; Halicioglu, T.

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Preparation and characterization of a new single crystal Bi2Sr1.5Pr2.5Cu2Oy
pp. 133-136(4)
Authors: Sun, X.; Wu, W.; Chen, Q.; Jia, Y.; Zhou, G.; Li, X.; Zhang, Y.

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WS2 thin films by metal organic chemical vapor deposition
pp. 137-150(14)
Authors: Chung, J.; Dai, Z.R.; Ohuchi, F.S.

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Kinetic phase separation in sputter-deposited aluminium-tin films
pp. 151-165(15)
Authors: Eisenmenger-Sittner, C.; Bangert, H.; Bergauer, A.

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Peculiarities of growing PbWO4 scintillator crystals for application in high-energy physics
pp. 175-180(6)
Authors: Burachas, S.; Martynov, V.; Ryzhikov, V.; Tamulaitis, G.; Gutbrod, H.H.; Manko, V.I.

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Growth of LaNiO3 thin films on MgO by flash MOCVD
pp. 181-188(8)
Authors: Gorbenko, O.Y.; Bosak, A.A.

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Initial growth of Pd on MgO(001)
pp. 189-202(14)
Authors: Fornander, H.; Hultman, L.; Birch, J.; Sundgren, J.

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Modeling of dopant segregation in vertical zone-melting crystal growth
pp. 203-213(11)
Authors: Lan, C.W.; Liang, M.C.

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AFM observation of barium nitrate {111} and {100} faces: - spiral growth and two-dimensional nucleation growth
pp. 214-223(10)
Authors: Maiwa, K.; Plomp, M.; van Enckevort, W.J.P.; Bennema, P.

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Growth of cadmium mercury thiocyanate single crystal for laser diode frequency doubling
pp. 240-244(5)
Authors: Yuan, D.; Zhong, Z.; Liu, M.; Xu, D.; Fang, Q.; Yonghong; Sun, S.; Jiang, M.

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Terrestrial and space-grown HAP and OCP crystals: effect of growth conditions on perfection and morphology
pp. 262-274(13)
Authors: Suvorova, E.I.; Christensson, F.; Lundager Madsen, H.E.; Chernov, A.A.

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Kinetics of growth and dissolution of calcium hydroxyapatite in suspensions with variable calcium to phosphate ratio
pp. 283-290(8)
Authors: Christoffersen, M.R.; Dohrup, J.; Christoffersen, J.

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Morphological stability of a planar interface subject to rapid quenching
pp. 291-297(7)
Authors: Ludwig, A.; Greven, K.; Sahm, P.R.

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Rapid thermal annealing processing of GaN epilayer on sapphire(0001)
pp. 298-301(4)
Authors: Li, X.; Sun, D.; Kong, M.; Yoon, S.F.

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The peculiarity of twinning in Li2B4O7 single crystals
pp. 302-304(3)
Author: Burak, Y.V.

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