Publisher: Elsevier

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Volume 183, Number 4, February 1998

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Chemical beam epitaxy of GaInAsP for long-wavelength lasers
pp. 505-510(6)
Authors: Nutsch, A.; Kratzer, H.; Abstreiter, G.; Torabi, B.; Weimann, G.; Trankle, G.

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MOVPE growth of highly strained InGaAs/GaAs quantum wells
pp. 511-518(8)
Authors: Bugge, F.; Zeimer, U.; Sato, M.; Weyers, M.; Trankle, G.

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Vapor-phase stoichiometry and heat treatment of CdTe starting material for physical vapor transport
pp. 519-524(6)
Authors: Kohles, S.S.; Martinez, D.A.; Su C.-H.; Sha, Y.; Lehoczky, S.L.; Liu, H.; Fang, R.; Brebrick, R.F.

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Analysis of the CVD in a horizontal reactor. I. The epitaxy of Ge
pp. 525-534(10)
Authors: Kuhn, W.S.; Angermeier, D.; Triboulet, R.; Gebhardt, W.; Druilhe, R.

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Analysis of the CVD in a horizontal reactor. II. The epitaxy of CdTe
pp. 535-544(10)
Authors: Kuhn, W.S.; Angermeier, D.; Druilhe, R.; Triboulet, R.; Gebhardt, W.

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Floating-zone growth of silicon in magnetic fields. I. Weak static axial fields
pp. 545-553(9)
Authors: Dold, P.; Croll, A.; Benz, K.W.

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Floating-zone growth of silicon in magnetic fields. II. Strong static axial fields
pp. 554-563(10)
Authors: Dold, P.; Crall, A.; Benz, K.W.; Szofran, F.R.; Lehoczky, S.L.

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Growth and texturing studies of Bi2.1Y0.1Sr1.9CaCu2-xLixO 8 crystals grown by floating-zone technique
pp. 573-580(8)
Authors: Prabhakaran, D.; Thamizhavel, A.; Jayavel, R.; Subramanian, C.

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Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy
pp. 581-593(13)
Authors: Kern, R.S.; Tanaka, S.; Rowland, L.B.; Davis, R.F.

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Gas-phase decomposition of MeTeBut and its relevance to the MOVPE of mercury cadmium telluride
pp. 594-603(10)
Authors: Hails, J.E.; Cole-Hamilton, D.J.; McQueen, A.E.D.

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Heat transfer and the external morphology of Czochralski-grown sillenite compounds
pp. 604-613(10)
Authors: Rojo, J.C.; Marin, C.; Dieguez, E.; derby, J.J.

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Cr, Ca: Y3Al5O12 laser crystal grown by the laser-heated pedestal growth method
pp. 614-621(8)
Authors: Ishibashi, S.; Naganuma, K.; Yokohama, I.

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Supersaturation and crystal growth in gas anti-solvent crystallization
pp. 622-628(7)
Authors: Tai, C.Y.; Cheng, C.

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Crystallisation of paracetamol (acetaminophen) in the presence of structurally related substances
pp. 629-640(12)
Authors: Green, D.A.; Meenan, P.; Grant, D.J.W.; Hendriksen, B.A.

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Change of morphology and growth mechanism of thin n-paraffin crystals induced by homologous impurities
pp. 641-652(12)
Authors: Lui, X.Y.; van Hoof, P.J.C.M.; van Enckevort, W.J.P.; Schoutsen, M.; Bennema, P.

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Re-clustering the database for crystallization of macromolecules
pp. 653-668(16)
Authors: Farr, R.G.J.; Perryman, A.L.; Samudzi, T.

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Step bunching: Generalized kinetics
pp. 669-682(14)
Authors: Chernov, A.A.; Coriell, S.R.; Murray, B.T.; McFadden, G.B.

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Correlation between main chain chirality and crystal ''twist'' direction in polymer spherulites
pp. 683-689(7)
Authors: Singfield, K.L.; Hobbs, J.K.; Keller, A.

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Multi-sheets In0.25Ga0.75As quantum dots grown by migration-enhanced epitaxy
pp. 705-707(3)
Authors: Cheng W.-Q.; Zhong, Z.; Wu, Y.; Huang, Q.; Zhou, J.

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Monocrystalline ZnS-sphalerite films grown by atomic layer epitaxy in a gas flow system
pp. 708-710(3)
Authors: Szczerbakow, A.; Dynowska, E.; Godlewski, R.; Swiatek, K.

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