Publisher: Elsevier

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Volume 183, Number 3, January 1998

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The self-organized In0.25Ga0.75As quantum dots grown by migration enhanced epitaxy
pp. 279-283(5)
Authors: Cheng W.-Q.; Zhong, Z.; Wu, Y.; Huang, Q.; Zhou, J.

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Microanalysis of single-phase AlN nanocrystals and AlN-Al nanocomposites prepared by DC are-discharge
pp. 284-288(5)
Authors: Yu, S.; Li, D.; Sun, H.; Li, H.; Yang, H.; Zou, G.

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MOCVD growth of MgSe thin films on GaAs substrates
pp. 289-293(5)
Authors: Jiang, F.; Liao, Q.; Fan, G.; Xiong, C.; Peng, X.; Liu, N.; Pan, C.

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X-ray study of UHV-CVD filling of porous silicon by Ge
pp. 294-304(11)
Authors: Buttard, D.; Dolino, G.; Campidelli, Y.; Halimaoui, A.

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The transition from ripples to islands in strained heteroepitaxial growth under low driving forces
pp. 305-310(6)
Authors: Dorsch, W.; Albrecht, M.; Strunk, H.P.; Steiner, B.; Wawra, H.; Wagner, G.

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Deposition and growth with desorption in molecular-beam epitaxy
pp. 311-322(12)
Authors: Pimpinelli, A.; Peyla, P.

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Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance
pp. 323-337(15)
Authors: Bachmann, K.J.; Sukidi, N.; Harris, C.; Dietz, N.; Tran, H.T.; Beeler, S.; Ito, K.; Banks, H.T.; Hopfner, C.

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Diamond films epitaxially grown by step-flow mode
pp. 338-346(9)
Authors: Okushi, H.; Hayashi, K.; Yamanaka, S.; Watanabe, H.; Kajimura, K.; Sekiguchi, T.

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Evolution of the phases and chemical composition during the formation of CIS thin films prepared by interdiffusion process in selenides layers
pp. 352-360(9)
Authors: Gordillo, G.; Cediel, G.; Caicedo, L.M.; Leal, H.; Rodriguez, J.A.; Cota, L.; Teheran, P.

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Growth and characteristics of long persistent SrAl2O4- and CaAl2O4- based phosphor crystals by a floating zone technique
pp. 361-365(5)
Authors: Katsumata, T.; Nabae, T.; Sasajima, K.; Matsuzawa, T.

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Crystal growth and optical characterisation of novel 3d2 ion laser hosts
pp. 366-376(11)
Authors: Gallagher, H.G.; Scott, M.A.; Henderson, B.; Russell, D.L.; Han, T.P.J.

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Characterization of bulk Cu0.85In1.05Se2 by photoluminescence and cathodoluminescence
pp. 377-384(8)
Authors: Lampert, M.D.; Meyer, B.K.; Hornung, M.; Petersson, A.; Samuelson, L.; Benz, K.W.

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High deposition rate parylene films
pp. 385-390(6)
Authors: Gill, W.N.; Ganguli, S.; Yang, G.; Karcz, J.; Lu, T.

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Czochralski growth of lead tungstate single crystals and their characterization
pp. 391-397(7)
Authors: Senguttuvan, N.; Mohan, P.; Babu, S.M.; Subramanian, C.

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Sol synthesis from zirconyl chloride octahydrate in NTA-ammonia solution
pp. 398-408(11)
Authors: Wang M.-L.; Liu, B.; Shih, Z.

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Growth and perfection of KCl crystals grown from aqueous solution
pp. 409-416(8)
Authors: Inoue, T.; Nishioka, K.; Yamaguchi, K.

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Impurity blocking of crystal growth: A Monte Carlo study
pp. 441-455(15)
Authors: van Enckevort, W.J.P.; van den Berg, A.C.J.F.

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Axial segregation in unsteady diffusion-dominated solidification of a binary alloy
pp. 490-496(7)
Authors: Korpela, S.A.; Kim, S.; Chait, A.

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