Publisher: Elsevier

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Volume 183, Number 1, January 1998

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GaAs epitaxy by chemical vapour transport under high, earth and low-gravity conditions
pp. 1-9(9)
Authors: Chevrier, V.; Launay J.-C.; Viraphong, O.; Gibart, P.; Laugt, S.

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High rate GaN epitaxial growth by sublimation sandwich method
pp. 10-14(5)
Authors: Mokhov, E.N.; Roenkov, A.D.; Boiko, M.E.; Baranov, P.G.; Vodakov, Y.A.

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Molecular beam epitaxy growth and characterizations of AlGaAsSb/AlAsSb bragg reflectors on InP
pp. 15-22(8)
Authors: Gentry, F.; Almuneau, G.; Bertru, N.; Chusseau, L.; Grech, P.; Jacquet, J.; Cot, D.

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The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
pp. 23-30(8)
Authors: Sanchez-Garcia, M.A.; Calleja, E.; Monroy, E.; Sanchez, F.J.; Calle, F.; Munoz, E.; Beresford, R.

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Surface structure control of GaAs (1 1 1)A vicinal substrates by metal-organic vapor-phase epitaxy
pp. 43-48(6)
Authors: Lee J.-S.; Isshiki, H.; Sugano, T.; Aoyagi, Y.

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Microstructure of GaN films on GaAs(1 0 0) substrates grown by hydride vapor-phase epitaxy
pp. 49-61(13)
Authors: Sakai, A.; Kimura, A.; Sunakawa, H.; Usui, A.

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Sulphur doping of GaSb grown by atmospheric pressure MOVPE
pp. 69-74(6)
Authors: Novak, J.; Kucera, M.; Hjelt, K.; Tuomi, T.; Hasenohrl, S.

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Substitution reaction of surface adsorbed P atoms to As atoms in the GaP/GaAs atomic layer epitaxy
pp. 75-80(6)
Authors: Koukitu, A.; Taki, T.; Nakajima, T.; Seki, H.

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Dynamic vapour pressure measurements of di-tertiarybutyl sulphide using an ultrasonic monitor
pp. 95-98(4)
Authors: Maung, N.; Stockton, L.D.; Ng, T.L.; Poole, I.B.; Williams, J.O.; Wright, A.C.; Foster, D.F.; Cole-Hamilton, D.J.

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Silicon-germanium molecular beam epitaxy system for high-quality nanostructures and devices
pp. 99-108(10)
Authors: Rupp, T.; Messarosch, J.; Eisele, I.

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Czochralski growth of bulk crystals of Ge1-xSix alloys
pp. 109-116(8)
Authors: Yonenaga, I.; Sumino, K.; Matsui, A.

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Study of GeSi alloy deposition on Ge substrate by very low-pressure chemical vapor deposition
pp. 117-123(7)
Authors: Gu, S.; Wang, R.; Jiang, N.; Zhu, S.; Zhang, R.; Shi, Y.; Hu, L.; Zheng, Y.

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Simultaneous growth of two differently oriented GaN epilayers on (1 1 . 0) sapphire II. A growth model of (0 0 . 1) and (1 0 . 0) GaN
pp. 131-139(9)
Authors: Kato, T.; Ohsato, H.; Okuda, T.; Kung, P.; Saxler, A.; Sun, C.; Razeghi, M.

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Modelling Ekman flow during the ACRT process with marked particles
pp. 140-149(10)
Authors: Juncheng, L.; Wanqi, J.

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Growth and characterization of Sr-rich Pr(Sr, Ba)2Cu3Oy single crystals
pp. 159-162(4)
Authors: Cao, G.; Zhang, X.; Song, H.; Jiao, Z.; Zhang, Q.; Zeng, Y.

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The material quality of CVD-grown SiC using different carbon precursors
pp. 163-174(12)
Authors: Hallin, C.; Ivanov, I.G.; Henry, A.; Egilsson, T.; Kordina, O.; Janzen, E.

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Initial stage of SiC growth on si (1 0 0) surface
pp. 175-182(8)
Authors: Takaoka, T.; Saito, H.; Igari, Y.; Kusunoki, I.

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Inter-leg angles in tetrapod ZnO particles
pp. 190-195(6)
Authors: Takeuchi, S.; Iwanaga, H.; Fujii, M.

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An investigation on the growth of thin chalcopyrite CuInSe2 films by selenization of Cu-In alloys in a box
pp. 196-204(9)
Authors: Jayaraj, M.K.; Parretta, A.; Addonizio, M.L.; Quercia, L.; Loreti, S.

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Czochralski growth of pure and pr3+-doped CaTiSiO5 and Ca2ZnSi2O7
pp. 205-216(12)
Authors: Caprez, A.; Mikhail, P.; Hulliger, J.

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Autostoichiometric vapor deposition. III. A study of stoichiometry and characterization of epitaxial LiTaO3 layer
pp. 217-226(10)
Authors: Akiba, E.; Takada, T.; Kumagai, T.; Kawaguchi, K.; Goorsky, M.S.; Chour, K.W.; Zhang, R.C.; Jensen, M.L.; Eaves, C.; Xu, R.

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Molecular dynamics study of BBO crystal growth melts
pp. 227-239(13)
Authors: Cheng, Z.; Lei, Y.

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How to predict the metastable zone width
pp. 240-250(11)
Authors: Mersmann, A.; Bartosch, K.

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Effect of vanadocene dichlorides on the crystal growth of hydroxyapatite
pp. 251-257(7)
Authors: Koutsopoulos, S.; Dalas, E.; Tzavellas, N.; Klouras, N.; Amoratis, P.

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Time resolved photoluminescence study of strained-layer InGaAsP/InP heterostructures
pp. 269-273(5)
Authors: Fancey, S.J.; Buller, G.S.; Massa, J.S.; Walker, A.C.; Perrin, S.D.; Dann, A.J.; Robertson, M.J.

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Growth and characterization of La3Ta0.5Ga5.5O14 single crystals
pp. 274-277(4)
Authors: Kawanaka, H.; Takeda, H.; Shimamura, K.; Fukuda, T.

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