Publisher: Elsevier

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Volume 178, Number 1, June 1997

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Solubility of nitrogen in binary III-V systems
pp. 1-7(7)
Authors: Stringfellow, G.B.; Ho, I.

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Theory of AlN, GaN, InN and their alloys
pp. 8-31(24)
Authors: Camacho, D.L.A.; Hopper, R.H.; Lin, G.M.; Myers, B.S.; van Schilfgaarde, M.; Sher, A.; Chen, A.

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Growth and characterization of In-based nitride compounds
pp. 32-44(13)
Authors: Iatridis, J.C.; Setton, L.A.; Weidenbaum, M.; Mow, V.C.; Bedair, S.M.; McIntosh, F.G.; Roberts, J.C.; Piner, E.L.; El-Masry, N.A.; Boutros, K.S.

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Feasibility of the synthesis of AlAsN and GaAsN films by plasma-source molecular-beam epitaxy
pp. 45-55(11)
Authors: Neptune, R.R.; Kautz, S.A.; Hull, M.L.; Mendoza-Diaz, G.; Stevens, K.S.; Schwartzman, A.F.; Beresford, R.

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Growth of group III nitrides by metalorganic molecular beam epitaxy
pp. 74-86(13)
Authors: Stulpner, M.A.; Reddy, B.D.; Starke, G.R.; Spirakis, A.; Abernathy, C.R.; MacKenzie, J.D.; Donovan, S.M.

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Gas-source molecular beam epitaxy of III-V nitrides
pp. 87-101(15)
Authors: Davis, R.F.; Paisley, M.J.; Sitar, Z.; Kester, D.J.; Ailey, K.S.; Linthicum, K.; Rowland, L.B.; Tanaka, S.; Kern, R.S.

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The energetics of the GaN MBE reaction: A case study of meta-stable growth
pp. 102-112(11)
Authors: van Dieen, J.H.; Newman, N.

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Growth and characterization of cubic GaN
pp. 113-133(21)
Authors: Okumura, H.; Feuillet, G.; Balakrishnan, K.; Hacke, P.; Yoshida, S.; Ohta, K.; Chichibu, S.; Hamaguchi, H.

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Supersonic jet epitaxy of III-nitride semiconductors
pp. 134-146(13)
Authors: Kobayashi, M.; Garcia-Elias, M.; Nagy, L.; Ritt, M.J.P.F.; An, K.; Cooney, W.P.; Linscheid, R.L.; Ferguson, B.A.; Mullins, C.B.

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Growth of gallium nitride by hydride vapor-phase epitaxy
pp. 147-156(10)
Authors: Riches, P.E.; Everitt, N.M.; Heggie, A.R.; McNally, D.S.; Molnar, R.J.; Gotz, W.; Romano, L.T.; Johnson, N.M.

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GaN growth on sapphire
pp. 168-173(6)
Authors: Fisher, D.A.; Tsang, A.C.; Paydar, N.; Milionis, S.; Turner, C.H.; Melton, W.A.; Pankove, J.I.

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Group IVB refractory metal crystals as lattice-matched substrates for growth of the group III nitrides by plasma-source molecular beam epitaxy
pp. 189-200(12)
Authors: Pandy, M.G.; Shelburne, K.B.; Beresford, R.; Paine, D.C.; Briant, C.L.

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Observation of coreless dislocations in α-GaN
pp. 201-206(6)
Authors: Stefanyshyn, D.J.; Nigg, B.M.; Cherns, D.; Young, W.T.; Steeds, J.W.; Ponce, F.A.; Nakamura, S.

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