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Publisher: Elsevier

Volume 172, Number 3, March 1997

Dynamic reflectance anisotropy and reflectance measurements of the deposition of Si on GaAs(001)-c(4 x 4)
pp. 275-283(9)
Authors: Taylor, A.G.; Turner, A.R.; Pemble, M.E.; Joyce, B.A.

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Synchrotron radiation multiple diffraction study of Al0.304Ga0.172 In0.524 As MOVPE grown onto InP(001)
pp. 284-290(7)
Authors: Sasaki, J.M.; Roberts, K.J.; Cardoso, L.P.; Campos, C.; Clark, G.F.; Pantos, E.; Sacilotti, M.A.

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Vapor phase epitaxy of InN using InCl and InCl3 sources
pp. 298-302(5)
Authors: Takahashi, N.; Ogasawara, J.; Koukitu, A.

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Eddy current sensor concepts for the Bridgman growth of semiconductors
pp. 303-312(10)
Authors: Dharmasena, K.P.; Wadley, H.N.G.

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Eddy current sensing of vertical bridgman growth of Cd0.96Zn0.04Te
pp. 337-349(13)
Authors: Dharmasena, K.P.; Wadley, H.N.G.

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Growth and characterization of high purity CdTe single crystals
pp. 370-375(6)
Authors: Yang, B.; Ishikawa, Y.; Miki, T.; Isshiki, M.; Doumae, Y.; Ohyama, T.

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Advanced mathematical models for simulation of radiative heat transfer in CVD reactors
pp. 389-395(7)
Authors: Durst, F.; Kadinski, L.; Makarov, Y.N.; Schafer, M.; Vasil'ev, M.G.; Yuferev, V.S.

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Epitaxial growth of single crystal films of Ba1-xKxBiO3+y superconductors
pp. 396-403(8)
Authors: Shiryaev, S.V.; Barilo, S.N.; Orlova, N.S.; Zhigunov, D.I.; Shestac, A.S.; Gatalskaya, V.I.; Pushkarev, A.V.; Koyava, V.T.; Pan, V.M.; Solovjov, V.F.

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Microstructure evolution and non-diamond carbon incorporation in CVD diamond thin films grown at low substrate temperatures
pp. 404-415(12)
Authors: Michler, J.; Stiegler, J.; von Kaenel, Y.; Moeckli, P.; Dorsch, W.; Stenkamp, D.; Blank, E.

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Nucleation behavior in the presence of charge in the CVD diamond process
pp. 416-425(10)
Authors: Hwang, N.M.; Choi, K.; Kang, S.J.; Jang, H.M.

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Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals
pp. 426-432(7)
Authors: Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R.

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Microstructure and formation mechanism of cylindrical and conical scrolls of the misfit layer compounds PbNbnS2n+1
pp. 433-439(7)
Authors: Bernaerts, D.; Amelinckx, S.; van Tendeloo, G.; van Landuyt, J.

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An innovative method for preparing semiconductor charges used in crystal growth and shear cell diffusion experiments
pp. 450-454(5)
Authors: Arnold, W.A.; Matthiesen, D.; Bennett, R.J.; Jayne, D.T.

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Solubility limit of Mn in the semimagnetic semiconductor Pb1-x-ySnxMnyTe
pp. 455-458(4)
Authors: Miotkowska, S.; Kachniarz, J.; Dynowska, E.; Story, T.; Jedrzejczak, A.

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U3Bi4 single crystal growth by the molten metal solution evaporation method
pp. 459-465(7)
Authors: Henkie, Z.; Wisniewski, P.; Gukasov, A.

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Possible trends for the growth of low scattering Nd:YVO4 laser crystals; phase relations - growth techniques
pp. 466-472(7)
Authors: Erdei, S.; Jin, B.M.; Ainger, F.W.; Keszei, B.; vandlik, J.; Suveges, A.

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Epitaxial growth of nonlinear optical 4'-nitrobenzylidene-3-acetamino-4-methoxy-aniline thin films on ethylenediammonium terephthalate single crystals
pp. 473-477(5)
Authors: Dietrich, T.; Schlesser, R.; Kundig, A.; Sitar, Z.; Gunter, P.; Erler, B.

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High-temperature solutions suitable for the growth of NdAl3(BO3)4 crystals
pp. 478-485(8)
Authors: Shumov, D.P.; Nihtianova, D.D.; Macicek, J.J.; Georgieva, J.K.; Nenov, A.T.; Nikolov, V.S.

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Growth and dissolution kinetics of cyanazine crystals in aqueous ethanol solutions
pp. 499-507(9)
Authors: Hurley, L.A.; Jones, A.G.; Drummond, J.N.

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Growth kinetics and mechanism of glucuronic acid lactone
pp. 508-513(6)
Authors: Jianzhong, C.; Fengtu, Y.; Songxian, L.; Jiahe, W.; Williams, I.D.

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Optical study of roughening transition on ice Ih (1010) planes under pressure
pp. 521-527(7)
Authors: Maruyama, M.; Kishimoto, Y.; Sawada, T.

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