Journal of Crystal Growth

Dynamic reflectance anisotropy and reflectance measurements of the deposition of Si on GaAs(001)-c(4 x 4)
pp. 275-283(9)
Authors: Taylor A.G.; Turner A.R.; Pemble M.E.; Joyce B.A.

Synchrotron radiation multiple diffraction study of Al_0.304Ga_0.172 In_0.524 As MOVPE grown onto InP(001)
pp. 284-290(7)
Authors: Sasaki J.M.; Roberts K.J.; Cardoso L.P.; Campos C.; Clark G.F.; Pantos E.; Sacilotti M.A.

Design and characterization of InAsP/InP/GaInP short-period superlattices for long-wavelength multi-quantum barrier grown by chemical beam epitaxy
pp. 291-297(7)
Authors: Loh T.H.; Miyamoto T.; Takada T.; Koyama F.; Iga K.

Vapor phase epitaxy of InN using InCl and InCl₃ sources
pp. 298-302(5)
Authors: Takahashi N.; Ogasawara J.; Koukitu A.

Eddy current sensor concepts for the Bridgman growth of semiconductors
pp. 303-312(10)
Authors: Dharmasena K.P.; Wadley H.N.G.

Methods for liquid-solid interface shape and location discrimination during eddy current sensing of Bridgman growth
pp. 313-322(10)
Authors: Wadley H.N.G.; Dharmasena K.P.

Eddy current determination of the electrical conductivity-temperature relation of Cd_1-xZn_xTe alloys
pp. 323-336(14)
Authors: Wadley H.N.G.; Choi B.W.

Eddy current sensing of vertical bridgman growth of Cd_0.96Zn_0.04Te
pp. 337-349(13)
Authors: Dharmasena K.P.; Wadley H.N.G.

Designing thermal environments to promote convex interface shapes during the vertical Bridgman growth of cadmium zinc telluride
pp. 350-360(11)
Authors: Kuppurao S.; Derby J.J.

Growth of ZnSe single crystals with B₂O₃ encapsulant: The role of solid-solid phase transformation on macro defect generation in ZnSe crystals
pp. 361-369(9)
Authors: Okada H.; Kawanaka T.; Ohmoto S.

Growth and characterization of high purity CdTe single crystals
pp. 370-375(6)
Authors: Yang B.; Ishikawa Y.; Miki T.; Isshiki M.; Doumae Y.; Ohyama T.

High concentration n-type doping in Si layers epitaxially grown by ultra-high vacuum chemical vapor deposition with cracking heater
pp. 376-380(5)
Author: Sugiyama N.

Kinetics and transport model for the chemical vapor epitaxy of Ge_xSi_1-x
pp. 381-388(8)
Authors: Liang J.; Jin X.

Advanced mathematical models for simulation of radiative heat transfer in CVD reactors
pp. 389-395(7)
Authors: Durst F.; Kadinski L.; Makarov Y.N.; Schafer M.; Vasil'ev M.G.; Yuferev V.S.

Epitaxial growth of single crystal films of Ba_1-xK_xBiO_3+y superconductors
pp. 396-403(8)
Authors: Shiryaev S.V.; Barilo S.N.; Orlova N.S.; Zhigunov D.I.; Shestac A.S.; Gatalskaya V.I.; Pushkarev A.V.; Koyava V.T.; Pan V.M.; Solovjov V.F.

Microstructure evolution and non-diamond carbon incorporation in CVD diamond thin films grown at low substrate temperatures
pp. 404-415(12)
Authors: Michler J.; Stiegler J.; Von Kaenel Y.; Moeckli P.; Dorsch W.; Stenkamp D.; Blank E.

Nucleation behavior in the presence of charge in the CVD diamond process
pp. 416-425(10)
Authors: Hwang N.M.; Choi K.; Kang S.J.-L.; Jang H.M.

Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals
pp. 426-432(7)
Authors: Goessens C.; Schryvers D.; Van Landuyt J.; De Keyzer R.

Microstructure and formation mechanism of cylindrical and conical scrolls of the misfit layer compounds PbNb_nS_2n+1
pp. 433-439(7)
Authors: Bernaerts D.; Amelinckx S.; Van Tendeloo G.; Van Landuyt J.

Microstructural characterisation of Terfenol-D crystals prepared by the Czochralski technique
pp. 440-449(10)
Authors: Bi Y.J.; Abell J.S.

An innovative method for preparing semiconductor charges used in crystal growth and shear cell diffusion experiments
pp. 450-454(5)
Authors: Arnold W.A.; Matthiesen D.; Bennett R.J.; Jayne D.T.

Solubility limit of Mn in the semimagnetic semiconductor Pb_1-x-ySn_xMn_yTe
pp. 455-458(4)
Authors: Miotkowska S.; Kachniarz J.; Dynowska E.; Story T.; Jedrzejczak A.

U₃Bi₄ single crystal growth by the molten metal solution evaporation method
pp. 459-465(7)
Authors: Henkie Z.; Wisniewski P.; Gukasov A.

Possible trends for the growth of low scattering Nd:YVO₄ laser crystals; phase relations - growth techniques
pp. 466-472(7)
Authors: Erdei S.; Jin B.M.; Ainger F.W.; Keszei B.; Vandlik J.; Suveges A.

Epitaxial growth of nonlinear optical 4'-nitrobenzylidene-3-acetamino-4-methoxy-aniline thin films on ethylenediammonium terephthalate single crystals
pp. 473-477(5)
Authors: Dietrich T.; Schlesser R.; Kundig A.; Sitar Z.; Gunter P.; Erler B.

High-temperature solutions suitable for the growth of NdAl₃(BO₃)₄ crystals
pp. 478-485(8)
Authors: Shumov D.P.; Nihtianova D.D.; Macicek J.J.; Georgieva J.K.; Nenov A.T.; Nikolov V.S.

The effect of surfactants on the crystallization and polymorphic transformation of glutamic acid
pp. 486-498(13)
Authors: Garti N.; Zour H.

Growth and dissolution kinetics of cyanazine crystals in aqueous ethanol solutions
pp. 499-507(9)
Authors: Hurley L.A.; Jones A.G.; Drummond J.N.

Growth kinetics and mechanism of glucuronic acid lactone
pp. 508-513(6)
Authors: Jianzhong C.; Fengtu Y.; Songxian L.; Jiahe W.; Williams I.D.

High-quality Ga_1-xIn_xAs_ySb_1-yquaternary layers grown from antimonide-rich solutions by liquid-phase epitaxy
pp. 514-520(7)
Authors: Wang J.-M.; Sun Y.-M.; Wu M.-C.

Optical study of roughening transition on ice I_h (1010) planes under pressure
pp. 521-527(7)
Authors: Maruyama M.; Kishimoto Y.; Sawada T.