Publisher: Elsevier

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Volume 169, Number 3, December 1996

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Metalorganic vapor phase epitaxial growth of AlGaSb and AIGaAsSb using all-organometallic sources
pp. 417-423(7)
Authors: Koljonen, T.; Lipsanen, H.; Sopanen, M.; Tuomi, T.

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Self-organized InGaAs quantum dots grown by molecular beam epitaxy on (100), (711)A/B, (511)A/B, (311)A/B, (211)A/B, and (111)A/B oriented GaAs
pp. 424-428(5)
Authors: Gonzalez-Borrero, P.P.; Lubyshev, D.I.; Marega, J.E.; Petitprez, E.; Basmaji, P.

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Low temperature photoluminescence of tellurium-doped GaSb grown by molecular beam epitaxy
pp. 450-456(7)
Authors: Bignazzi, A.; Grilli, E.; Guzzi, M.; Radice, M.; Bosacchi, A.; Franchi, S.; Magnanini, R.

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Crystal growth of pure and Zn-doped CuGeO3 by the floating zone (FZ) method
pp. 469-473(5)
Authors: Tanaka, I.; Shibuya, Y.; Kojima, H.

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Growth of Hg1-xCdxTe liquid phase epitaxial films on vicinal planes
pp. 480-484(5)
Authors: Li, B.; Chu, J.H.; Zhu, J.Q.; Chen, X.Q.; Cao, J.Y.; Tang, D.Y.

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Growth rate and deposition process of silicon carbide film by low-pressure chemical vapor deposition
pp. 485-490(6)
Authors: Murooka K.-I.; Higashikawa, I.; Gomei, Y.

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Analytical model of silicon carbide growth under free-molecular transport conditions
pp. 491-495(5)
Authors: Karpov, S.Y.; Makarov, Y.N.; Ramm, M.S.

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Control of thin film structure by reactant pressure in atomic layer deposition of TiO2
pp. 496-502(7)
Authors: Aarik, J.; Aidla, A.; Siimon, H.; Uustare, T.; Sammelselg, V.

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Growth and characterization of La3Nb0.5Ga5.5O14 single crystals
pp. 503-508(6)
Authors: Takeda, H.; Shimamura, K.; Kohno, T.; Fukuda, T.

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Inclusions in LiB3O5 crystals, obtained by the top-seeded solution growth method in the Li2O-B2O3 system: Part 2
pp. 527-533(7)
Authors: Nihtianova, D.D.; Shumov, D.P.; Macicek, J.J.; Nenov, A.T.

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Growth defects in Nb:KTP crystals observed by synchrotron radiation topography
pp. 534-538(5)
Authors: Liu, W.J.; Jiang, S.S.; Huang, X.R.; Hu, X.B.; Zeng, W.; Wei, J.Q.; Wang, J.Y.; Jiang, J.H.; Han, Y.

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Phase diagram for controlled crystallization of calcium phosphate under acidic organic monolayers
pp. 557-562(6)
Authors: Cui, F.Z.; Zhou, L.F.; Cui, H.; Ma, C.L.; Lu, H.B.; Li, H.D.

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Coarsening phenomenon in two-dimensional colloidal aggregation and crystallization
pp. 570-574(5)
Authors: Lei X.-Y.; Wan, P.; Xu, N.; Zhou, C.; Ming, N.

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On the influence of impurities in beryllium single crystal growth
pp. 575-577(3)
Authors: Scholz, U.; Plachke, D.; Yuan, W.; Carstanjen, H.; Petzow, G.; Mucklich, F.

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Determination and modification of the thermal conditions in a double ellipsoid mirror furnace
pp. 578-581(4)
Authors: Mucklich, F.; Nikolic, Z.S.; Scholz, U.; Petzow, G.

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Growth of -KGd1-xNdx(WO4)2 single crystals in K2W2O7 solvents
pp. 600-603(4)
Authors: Diaz, F.; Sole, R.; Ruiz, X.; Gavalda, J.; Aguilo, M.; Nikolov, V.; Solans, X.

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K(M1/3Nb2/3)OAsO4 (M = Mg,Zn) crystals with structure of KTiOPO4
pp. 604-605(2)
Authors: Chani, V.I.; Shimamura, K.; Endo, S.; Fukuda, T.

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