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Publisher: Elsevier

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Volume 167, Number 1, September 1996

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Growth of GaN/AlN by low-pressure MOCVD using triethylgallium and tritertbutylaluminium
pp. 1-7(7)
Authors: Ambacher, O.; Dimitrov, R.; Lentz, D.; Metzger, T.; Rieger, W.; Stutzmann, M.

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Control of III-V epitaxy in a metalorganic chemical vapor deposition process: Impact of source flow control on composition and thickness
pp. 8-16(9)
Authors: Gaffney, M.S.; Smith, R.S.; denbaars, S.P.; Reaves, C.M.; Holmes, A.L.

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Zn solubility limit in GaAs: Growth versus equilibrium
pp. 17-23(7)
Authors: Chen, C.Y.; Cohen, R.M.

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Locally varying chemical potential and growth surface profile: A case study on solution grown Si(Ge)/Si
pp. 24-31(8)
Authors: Albrecht, M.; Christiansen, S.; Michler, J.; Strunk, H.P.; Hansson, P.O.; Bauser, E.

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Si1-xGex fiber crystals with functionally variant composition grown by micro-pulling-down technique
pp. 38-44(7)
Authors: Vink, M.; van der Poll, J.M.; Koh, H.J.; Schafer, N.; Shimamura, K.; Fukuda, T.

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Analysis of Ge distribution in Si1-xGex single crystal fibers by the micro-pulling down method
pp. 64-73(10)
Authors: Uda, S.; Kon, J.; Shimamura, K.; Fukuda, T.

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Validation of models for subgrain growth in Hg1-xCdxTe (MCT) by thermal annealing
pp. 87-92(6)
Authors: Perez, L.V.; Trigubo, A.B.; Walsoe de Reca, N.E.

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Growth and characterization of (Tl,Pb)(Sr,Ba)2Ca2Cu3Oy single crystals
pp. 93-101(9)
Authors: Weber, H.W.; Wang, X.L.; Yang, X.M.; Abraham, R.; Lebbou, K.; Cohen-Adad, M.T.; Halwax, E.; Wiede, P.

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Influence of the cation sublattice on the growth, structure and properties of single crystals of 123- and 2212-type high-Tc superconductors
pp. 102-106(5)
Authors: Babonas G.-J.; Leonyuk, L.; Vetkin, A.; Maltsev, V.; Arakcheeva, A.

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Measurement of diffusion coefficient using a diaphragm cell: PbBr2-AgBr system
pp. 107-110(4)
Authors: Singh, N.B.; Glicksman, M.E.; Coriell, S.R.; Duval, W.M.B.; Santoro, G.J.; deWitt, R.

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Initial growth of CaF2 and BaF2/CaF2 on Si(110) during molecular beam epitaxy
pp. 111-121(11)
Authors: Liu, W.K.; Santos, M.B.; Fang, X.M.; Chatterjee, T.; McCann, P.J.; Yuan, W.; O'Rear, E.A.

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Comparative studies between the growth characteristics of Bi2Te3 thin films deposited on SiO2, Si(100) and Si(111)
pp. 122-128(7)
Authors: Liautard, B.; Brun, G.; Tedenac, J.C.; Ferhat, M.; Lassabatere, L.; Nouaoura, M.

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Flux-enhanced growth of multi-source physical vapor deposited SrGa2S4:Ce,Cl electroluminescent thin films
pp. 129-132(4)
Authors: Braunger, D.; Oberacker, T.A.; Schock, H.W.

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Properties of cadmium sulphide films grown by single-source metalorganic chemical vapour deposition with dithiocarbamate precursors
pp. 133-142(10)
Authors: O'Brien, P.; Walsh, J.R.; Watson, I.M.; Hart, L.; Silva, S.R.P.

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HREM study of the epitaxial growth of Fe on Ir(001)
pp. 143-150(8)
Authors: Snoeck, E.; Frechengues, S.; Casanove, M.J.; Roucau, C.; Andrieu, S.

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Preparation and characterization of AgGaS2 thin films by vacuum evaporation
pp. 151-156(6)
Authors: Kurasawa, M.; Kobayashi, S.; Kaneko, F.; Oishi, K.; Ohta, S.

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Crystallization and thermal properties of Al2O3-Y2O3 melts
pp. 165-170(6)
Authors: Stankus, S.V.; Tyagel'sky, P.V.

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Stable and metastable phase equilibrium in system Bi2O3-GeO2
pp. 171-175(5)
Authors: Miller, S.W.; dennis, R.G.; Kaplun, A.B.; Meshalkin, A.B.

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Crystal growth of Cr3+:LiCaAlF6 by Bridgman technique
pp. 176-179(4)
Authors: Wang, Y.; Huang, C.; Chen, L.; Fang, Z.

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Improved control of sapphire crystal growth
pp. 183-189(7)
Authors: Horowitz, A.; Biderman, S.; Einav, Y.; Ben Amar, G.; Gazit, D.

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Cadmium purification by vacuum distillation in the presence of its oxide: Thermodynamic modelling and experiment
pp. 208-211(4)
Authors: Shelpakova, I.R.; Kovalevski, S.V.; Kosyakov, V.I.

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Dynamic light scattering study of precrystallizing ribonuclease solutions
pp. 212-220(9)
Authors: Jullien, M.; Boyer, M.; Roy, M.

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Artificial neural network prediction of tetragonal lysozyme face growth rates
pp. 221-236(16)
Authors: Noever, D.; Pusey, M.L.; Forsythe, E.L.; Baskaran, S.

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Fractional suspension crystallization with additional purification steps
pp. 248-252(5)
Authors: Poschmann, M.; Ulrich, J.

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Monte Carlo simulation of underpotential deposition in the Ag*(111)/Pb2+ system
pp. 253-259(7)
Authors: Obretenov, W.; Dimitrov, N.; Popov, A.

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Growth rate models and kinetics estimation for CaCO3 precipitated in continuous crystallizers
pp. 260-264(5)
Authors: Isopescu, R.; Mocioi, M.; Zahanagiu, F.; Filipescu, L.

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Measurements of the evolution of porosity in a mushy layer
pp. 285-291(7)
Authors: Jahrling, K.; Tait, S.

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The incorporation of convection in 1D models of float zone and traveling solvent techniques
pp. 333-344(12)
Authors: Louchev, O.A.; Otani, S.; Ishizawa, Y.

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The effect of gravity on crystal growth of InGaAs by the Bridgman method
pp. 357-360(4)
Authors: Fujiwara, S.; Araki, T.; Irikura, M.; Matsumoto, K.; Shirakawa, T.; Tatsumi, M.; Murai, S.

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Influence of the thermal history of melts on the formation of grown-in defects in silicon
pp. 361-364(4)
Authors: Ikari, A.; Isunome, K.; Kawanishi, S.; Togawa, S.; Terashima, K.; Kimura, S.

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Growth and giant magnetoresistance effect in La-Ca-Mn-O and La-Sr-Mn-O single crystals
pp. 365-368(4)
Authors: Balbashov, A.M.; Karabashev, S.G.; Mukovskiy, Y.M.; Sverkov, S.A.

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Growth and optical properties of ErVO4 and LuVO4 single crystals
pp. 369-372(4)
Authors: Terada, Y.; Shimamura, K.; Kochurikhin, V.V.; Fukuda, T.; Barashov, L.V.; Ivanov, M.A.

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Properties of MNBA-Et (4'-nitrobenzylidene, 3-ethylcarbonylamino, 4-methoxyaniline) melt
pp. 373-377(5)
Authors: Pan, S.; Zhang, Y.; Kong, D.; Shao, Z.

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Ba2NaNb5O15/MgO optical waveguide structure grown on Si wafer by pulsed laser deposition
pp. 378-382(5)
Authors: Guo, X.L.; Liu, Z.G.; Zhu, S.N.; Xiong, S.B.; Zhu, Y.Y.; Liu, J.M.

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Thermal diffusion dominated dendritic growth - An analysis of the wall proximity effect
pp. 383-386(4)
Authors: Chait, A.; Pines, V.; Zlatkowski, M.

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Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching
pp. 391-395(5)
Authors: Owman, F.; Hallin, C.; Martensson, P.; Janzen, E.

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