Effects of As cell temperature on oval defect density and C acceptor concentration of light Si-doped GaAs grown by molecular beam epitaxy

Authors: Zhang D.H.1; Li C.Y.

Source: Journal of Crystal Growth, Volume 165, Number 1, July 1996 , pp. 15-18(4)

Publisher: Elsevier

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Language: English

Document Type: Research article

DOI: 10.1016/0022-0248(96)00159-5

Affiliations: 1: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

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