Publisher: Elsevier

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Volume 165, Number 1, July 1996

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Determination of lattice parameters in the epitaxial AlSb/GaSb system by high resolution X-ray diffraction
pp. 8-14(7)
Authors: Bocchi, C.; Bosacchi, A.; Ferrari, C.; Franchi, S.; Franzosi, P.; Nasi, L.; Magnanini, R.

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Growth and characterisation of Hg1-xCdxTe (0.21 < x < 0.36) epilayers grown from Te-rich solution by the dipping technique
pp. 19-24(6)
Authors: Tleugabulova, D.; Perez, I.G.; Gupta, S.C.; Sitharaman, S.; Nagpal, A.; Gautam, M.; Berlouis, L.E.A.

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Factors influencing low-temperature photo-assisted OMVPE growth of ZnSe
pp. 25-30(6)
Authors: Jain, F.C.; Gokhale, M.R.; Bao, K.X.; Healey, P.D.; Ayers, J.E.

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Study on the ZnSe phase diagram by differential thermal analysis
pp. 31-36(6)
Authors: Okada, H.; Kawanaka, T.; Ohmoto, S.

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VLS growth of silicon whiskers on a patterned silicon-on-insulator (SOI) wafer
pp. 37-41(5)
Authors: Asai, S.; Okajima, Y.; Amemiya, M.; Kato, K.

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Growth and phase transition of [(C60)5( Cu)5]52 multilayer film
pp. 50-56(7)
Authors: Yoneda, Y.; Sakaue, K.; Terauchi, H.

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The fabrication of nickel and chromium silicide using an XeCl excimer laser
pp. 57-60(4)
Authors: Barbero, C.J.; deng, C.; Sigmon, T.W.; Russell, S.W.; Alford, T.L.

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Growth of epitaxial CoSi2 films on strained Si1-xGex/Si(001) heterostructures
pp. 61-69(9)
Authors: Thede, R.; Haberland, D.; Below, E.; Rodewald, M.; Schaffer, C.

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Hot wall epitaxy grown n-PbTe(100)/p-Si(100) heterojunction
pp. 70-74(5)
Authors: Yang, Y.; Li, W.; Lu, L.; Xu, L.; Huang, H.; Wang, S.; Xiong, X.; Yang, Y.

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Spherical crystals of Pb1-xSnxTe grown in microgravity
pp. 75-80(6)
Authors: Kinoshita, K.; Yamada, T.

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Gel growth of 2-amino-5-nitropyridinium dihydrogen phosphate crystals followed by holographic interferometry
pp. 90-97(8)
Authors: Ralph, J.P.; Catcheside, D.E.A.; Lefaucheux, F.; Bernard, Y.; Vennin, C.; Robert, M.C.

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Reactions of octacalcium phosphate to form hydroxyapatite
pp. 106-115(10)
Authors: Boulieu, R.; Brown, P.W.; Graham, S.

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Fluorapatite growth kinetics and the influence of solution composition
pp. 116-123(8)
Authors: Nancollas, G.H.; Liu, Y.

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Properties of hydroxyapatite crystallized from high temperature alkaline solutions
pp. 124-128(5)
Authors: Miljevic, N.; Lazic, S.; Katanic-Popovic, J.; Zec, S.

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Stabilizing/destabilizing effects growth of axial accelerations in Bridgman growth
pp. 129-136(8)
Authors: Bouhallab, S.; Henry, G.; Boschetti, E.; Naumann, R.J.

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Classification of morphological defects on GaAs/AlAsSb/GaSb structures prepared by MBE
pp. 156-158(3)
Authors: Srnanek, R.; Nemeth, S.; Kovac, J.; Kicin, S.; Grietens, B.; Borghs, G.; Pekarek, L.; Sestakova, V.; Novak, J.

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Various methods for the growth of GaSb single crystals
pp. 159-162(4)
Authors: Ying, M.; Sokoloski, E.; Ito, Y.; Sestakova, V.; Stepanek, B.; Sestak, J.

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Growth of lead tungstate single crystal scintillators
pp. 163-165(3)
Authors: Nitsch, K.; Nikl, M.; Ganschow, S.; Reiche, P.; Uecker, R.

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Formation of "gigantic" crystallites in ZnS obtained by self-propagating high-temperature synthesis
pp. 166-168(3)
Authors: Guillen, D.A.; Barroso, C.G.; Perez-Bustamante, J.A.; Krasnov, A.N.; Kozitsky, S.V.

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In situ transport rate monitor during ZnSe crystal growth by PVT
pp. 169-171(3)
Authors: Fujiwara, S.; Matsumoto, K.; Shirakawa, T.

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Examination of pits appearing on selectively grown Si film on SiO2 patterned wafers
pp. 172-174(3)
Authors: Kanaya, H.; Imai, S.; Sugiyama, N.

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Epitaxial growth of (110) DyFe2, TbFe2 and Dy0.7Tb0.3Fe2 thin films by molecular beam epitaxy
pp. 175-178(4)
Authors: Oderno, V.; Dufour, C.; Dumesnil, K.; Mangin, P.; Marchal, G.

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Pulsed laser deposition of c-oriented LiNbO3/LiTaO3 optical waveguiding bilayered films on silicon wafers
pp. 187-190(4)
Authors: Guo, X.L.; Liu, Z.G.; Zhu, S.N.; Yu, T.; Xiong, S.B.; Hu, W.S.

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Segregation control in horizontal Bridgman crystal growth
pp. 195-197(3)
Authors: Kou, S.; Tao, Y.

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Improved growth of large YBCO single crystals
pp. 198-201(4)
Authors: Yao, X.; Egami, M.; Namikawa, Y.; Mizukoshi, T.; Shiohara, Y.; Tanaka, S.

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