Journal of Crystal Growth

Selective growth of GaAs and Al_0.35Ga_0.65As on GaAs patterned substrates by HCl assisted low pressure metalorganic vapour phase epitaxy
pp. 1-7(7)
Authors: Gibart P.; Nataf G.; Leroux M.; Laugt S.M.

Determination of lattice parameters in the epitaxial AlSb/GaSb system by high resolution X-ray diffraction
pp. 8-14(7)
Authors: Bocchi C.; Bosacchi A.; Ferrari C.; Franchi S.; Franzosi P.; Nasi L.; Magnanini R.

Effects of As cell temperature on oval defect density and C acceptor concentration of light Si-doped GaAs grown by molecular beam epitaxy
pp. 15-18(4)
Authors: Zhang D.H.; Li C.Y.

Growth and characterisation of Hg_1-xCd_xTe (0.21 < x < 0.36) epilayers grown from Te-rich solution by the dipping technique
pp. 19-24(6)
Authors: Tleugabulova D.; Perez I.G.; Gupta S.C.; Sitharaman S.; Nagpal A.; Gautam M.; Berlouis L.E.A.

Factors influencing low-temperature photo-assisted OMVPE growth of ZnSe
pp. 25-30(6)
Authors: Jain F.C.; Gokhale M.R.; Bao K.X.; Healey P.D.; Ayers J.E.

Study on the ZnSe phase diagram by differential thermal analysis
pp. 31-36(6)
Authors: Okada H.; Kawanaka T.; Ohmoto S.

VLS growth of silicon whiskers on a patterned silicon-on-insulator (SOI) wafer
pp. 37-41(5)
Authors: Asai S.; Okajima Y.; Amemiya M.; Kato K.

Growth mechanisms of YBa₂Cu₃O_7- single crystals grown by the flux method using alumina crucibles
pp. 42-49(8)
Authors: Russell G.J.; Zhou B.

Growth and phase transition of [(C₆₀)₅( Cu)₅]₅₂ multilayer film
pp. 50-56(7)
Authors: Yoneda Y.; Sakaue K.; Terauchi H.

The fabrication of nickel and chromium silicide using an XeCl excimer laser
pp. 57-60(4)
Authors: Barbero C.J.; Deng C.; Sigmon T.W.; Russell S.W.; Alford T.L.

Growth of epitaxial CoSi₂ films on strained Si_1-xGe_x/Si(001) heterostructures
pp. 61-69(9)
Authors: Thede R.; Haberland D.; Below E.; Rodewald M.; Schaffer C.

Hot wall epitaxy grown n-PbTe(100)/p-Si(100) heterojunction
pp. 70-74(5)
Authors: Yang Y.; Li W.; Lu L.; Xu L.; Huang H.; Wang S.; Xiong X.; Yang Y.

Spherical crystals of Pb_1-xSn_xTe grown in microgravity
pp. 75-80(6)
Authors: Kinoshita K.; Yamada T.

Variation of the viscosity of molten potassium niobate with annealing time
pp. 81-89(9)
Authors: Hong X.; Chen Y.

Gel growth of 2-amino-5-nitropyridinium dihydrogen phosphate crystals followed by holographic interferometry
pp. 90-97(8)
Authors: Ralph J.P.; Catcheside D.E.A.; Lefaucheux F.; Bernard Y.; Vennin C.; Robert M.C.

A XRD and TEM study on the transformation of amorphous calcium phosphate in the presence of magnesium
pp. 98-105(8)
Authors: Abbona F.; Baronnet A.

Reactions of octacalcium phosphate to form hydroxyapatite
pp. 106-115(10)
Authors: Boulieu R.; Brown P.W.; Graham S.

Fluorapatite growth kinetics and the influence of solution composition
pp. 116-123(8)
Authors: Nancollas G.H.; Liu Y.

Properties of hydroxyapatite crystallized from high temperature alkaline solutions
pp. 124-128(5)
Authors: Miljevic N.; Lazic S.; Katanic-Popovic J.; Zec S.

Stabilizing/destabilizing effects growth of axial accelerations in Bridgman growth
pp. 129-136(8)
Authors: Bouhallab S.; Henry G.; Boschetti E.; Naumann R.J.

Stability of double-diffusive convection in a freckle-free solidification system
pp. 137-146(10)
Authors: Chen F.; Lu J.W.

The effects of an applied electric field on the linear stability in the solidification of a dilute binary alloy
pp. 147-155(9)
Authors: Hwang C.-C.; Hsieh J.-Y.; Liu H.-H.

Classification of morphological defects on GaAs/AlAsSb/GaSb structures prepared by MBE
pp. 156-158(3)
Authors: Srnanek R.; Nemeth S.; Kovac J.; Kicin S.; Grietens B.; Borghs G.; Pekarek L.; Sestakova V.; Novak J.

Various methods for the growth of GaSb single crystals
pp. 159-162(4)
Authors: Ying M.; Sokoloski E.; Ito Y.; Sestakova V.; Stepanek B.; Sestak J.

Growth of lead tungstate single crystal scintillators
pp. 163-165(3)
Authors: Nitsch K.; Nikl M.; Ganschow S.; Reiche P.; Uecker R.

Formation of "gigantic" crystallites in ZnS obtained by self-propagating high-temperature synthesis
pp. 166-168(3)
Authors: Guillen D.A.; Barroso C.G.; Perez-Bustamante J.A.; Krasnov A.N.; Kozitsky S.V.

In situ transport rate monitor during ZnSe crystal growth by PVT
pp. 169-171(3)
Authors: Fujiwara S.; Matsumoto K.; Shirakawa T.

Examination of pits appearing on selectively grown Si film on SiO₂ patterned wafers
pp. 172-174(3)
Authors: Kanaya H.; Imai S.; Sugiyama N.

Epitaxial growth of (110) DyFe₂, TbFe₂ and Dy_0.7Tb_0.3Fe₂ thin films by molecular beam epitaxy
pp. 175-178(4)
Authors: Oderno V.; Dufour C.; Dumesnil K.; Mangin P.; Marchal G.

Single crystal growth and characterization of frustrated antiferromagnet Sr_aPb_1-aCr_xGa_12-xO₁₉
pp. 179-182(4)
Author: Dabkowska H.A.

Preparation of spinel ZnGa₂O₄ films on MgO substrates by the solvent evaporation epitaxy method
pp. 183-186(4)
Authors: Yan Z.; Koike M.; Takei H.

Pulsed laser deposition of c-oriented LiNbO₃/LiTaO₃ optical waveguiding bilayered films on silicon wafers
pp. 187-190(4)
Authors: Guo X.L.; Liu Z.G.; Zhu S.N.; Yu T.; Xiong S.B.; Hu W.S.

A simple and low cost method for fabricating single crystal microspheres
pp. 191-194(4)
Authors: Wen W.; Lu K.

Segregation control in horizontal Bridgman crystal growth
pp. 195-197(3)
Authors: Kou S.; Tao Y.

Improved growth of large YBCO single crystals
pp. 198-201(4)
Authors: Yao X.; Egami M.; Namikawa Y.; Mizukoshi T.; Shiohara Y.; Tanaka S.