Publisher: Elsevier

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Volume 163, Number 4, June 1996

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Characterization of Nd-doped AlGaAs grown by liquid phase epitaxy
pp. 343-347(5)
Authors: Lee C.-T.; Yeh, J.; Lyu, Y.

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Morphology investigation of Hg1-xCdxTe liquid phase epitaxial films
pp. 348-352(5)
Authors: Scheper, T.H.; Hilmer, J.M.; Lammers, F.; Muller, C.; Reinecke, M.; Li, B.; Chu, J.H.; Zhu, J.Q.; Chen, X.Q.; Cao, J.Y.; Tang, D.Y.

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Growth and electrical properties of PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure liquid phase epitaxy
pp. 353-358(6)
Authors: Johnson, R.D.; Todd, R.J.; Arnold, F.H.; Itoh, O.; Niskizawa, J.; Suto, K.

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Full-scale experiments on solid-pellets feed continuous Czochralski growth of silicon crystals
pp. 359-368(10)
Authors: Haj-Yehia, A.I.; Benet, L.Z.; Anselmo, A.; Koziol, J.; Prasad, V.

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Crystal growth of high-TC superconductors Pr2-xCexCuO4+ with substitutions of Ni and Co for Cu
pp. 369-376(8)
Authors: Moskvin, L.N.; Rodinkov, O.V.; Brinkmann, M.; Rex, T.; Bach, H.; Westerholt, K.

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Long- and short-distance ordering of the metal cores of giant Pd clusters
pp. 377-387(11)
Authors: Cochet, S.; Pesliakas, H.; Kroviarski, Y.; Cartron, J.P.; Bertrand, O.; Volkov, V.V.; Cherkashina, N.V.; Vargaftik, M.N.; Moiseev, I.I.; Novotortsev, V.M.; Kvit, A.V.; Chuvilin, A.L.; Tsirkov, G.A.; van Tendeloo, G.

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Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications
pp. 388-392(5)
Authors: Law, B.; Appleby, J.R.G.; Shimamura, K.; Takeda, H.; Kohno, T.; Fukuda, T.

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OH bands in (Dy1-xGdx)3Ga5O12, Dy3(Ga1-yAly))5O12 and related oxides grown by the Czochralski method
pp. 393-397(5)
Authors: Kimura, H.; Kochurikhin, V.V.; Shimamura, K.; Fukuda, T.

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Growth and characterization of gallium selenide crystals for far-infrared conversion applications
pp. 398-402(5)
Authors: Guoming, Z.; Fornstedt, T.; Guiochon, G.; Singh, N.B.; Henningsen, T.; Balakrishna, V.; Suhre, D.R.; Fernelius, N.; Hopkins, F.K.; Zelmon, D.E.

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Oxygen partial pressure dependence of optical absorption in lithium niobate
pp. 403-410(8)
Authors: Kennedy, J.H.; Suzuki, T.

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Thermal effects and kinetics in step-flow crystal growth of α-HgI2
pp. 411-419(9)
Authors: Barroso, C.G.; Rodriguez, M.C.; Guillen, D.A.; Perez-Bustamante, J.A.; Louchev, O.A.

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Fast-growth technique for ice single crystals
pp. 420-425(6)
Authors: Arafa, H.M.M.; Hamada, F.M.A.; Elmazar, M.M.A.; Nau, H.; Khusnatdinov, N.N.; Petrenko, V.F.

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Salting-out precipitation of potassium dihydrogen phosphate (KDP). II. Influence of agitation intensity
pp. 426-433(8)
Authors: Oyler, A.R.; Armstrong, B.L.; Cha, J.Y.; Zhou, M.X.; Yang, Q.; Robinson, R.I.; Dunphy, R.; Burinsky, D.J.; Serrano, M.L.; Barata, P.A.

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Struvite and calcite crystallization induced by cellular membranes of Myxococcus xanthus
pp. 434-439(6)
Authors: Woolf, E.J.; Matuszewski, B.; Omar, N.B.; Martinez-Canamero, M.; Arias, J.M.; Rodriguez-Gallego, M.; Galindo, A.L.; Gonzalez-Munoz, M.T.

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Melt crystallization of behenic acid in microspheres dispersed in polymer
pp. 440-444(5)
Authors: Dinelli, G.; Vicari, A.; Catizone, P.; Tsutsui, K.; Hotta, Y.; Sato, K.

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Formation and decay of spherical concentric-shell carbon clusters
pp. 445-454(10)
Authors: Louter, A.J.H.; van Beekvelt, C.A.; Montanes, P.C.; Slobodnik, J.; Vreuls, J.J.; Brinkman, U.A.T.; Banhart, F.; Zwanger, M.S.; Seeger, A.

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Premelting of ice in porous silica glass
pp. 455-460(6)
Authors: Heron, S.; Tchapla, A.; Ishizaki, T.; Furukawa, Y.; Maruyama, M.; Dash, J.G.

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Microsegregation far from equilibrium
pp. 461-469(9)
Authors: Gawdzik, B.; Matynia, T.; Jackson, K.A.; Beatty, K.M.; Gilmer, G.H.; Temkin, D.E.

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Silicon surface passivation by metal layers for low-temperature epitaxy
pp. 470-473(4)
Authors: Edwards, C.; Lawton, L.A.; Coyle, S.M.; Ross, P.; Kuhnle, J.; Bergmann, R.; Werner, J.H.; Albrecht, M.

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Crystal orientation effect under microgravity conditions
pp. 474-477(4)
Authors: Buschges, R.; Linde, H.; Mutschler, E.; Spahn-Langguth, H.; Lisgarten, J.N.; Maes, D.; Dao Thi, M.H.; Wyns, L.; Key, D.L.; Marks, J.A.

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