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Volume 163, Number 3, June 1996

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On the formation of antiphase domains in the system of GaAs on Ge
pp. 195-202(8)
Authors: Singh, R.P.; Abbas, N.M.; Li, Y.; Bongers, M.M.G.; Giling, L.J.; Salviati, G.; Lazzarini, L.; Nasi, L.

A closer study on the self-annihilation of antiphase boundaries in GaAs epilayers
pp. 203-211(9)
Authors: Eveleigh, L.J.; Ducauze, C.J.; Arpino, P.J.; Li, Y.; Giling, L.J.

High purity GaAs and AlGaAs grown using tertiarybutylarsine, trimethylaluminum, and trimethylgallium
pp. 212-219(8)
Authors: Kyung, H.R.; Biefeld, R.M.; Chui, H.C.; Hammons, B.E.; Breiland, W.G.; Brennan, T.M.; Jones, E.D.; Kim, M.H.; Grodzinski, P.; Chang, K.H.; Lee, H.C.

Rapid diffusion of Ga into InSb and precipitation of In
pp. 220-225(6)
Authors: Tung-Hu, T.; Chieh-Fu, C.; Hayakawa, Y.; Hamakawa, E.; Koyama, T.; Kumagawa, M.

Self-organized growth of GaAs/InAs heterostructure nanocylinders by organometallic vapor phase epitaxy
pp. 226-231(6)
Authors: Fukakusa, Y.; Yoshimura, K.; Waki, H.; Ishiguro, S.; Hiruma, K.; Murakoshi, H.; Yazawa, M.; Katsuyama, T.

<0001>-oriented growth of AlN films on Si(111) by microwave plasma CVD with AlBr3NH3N2 system
pp. 232-237(6)
Authors: Moriyama, H.; Anegayama, M.; Kato, Y.; Meng, G.; Liu, X.; Xie, S.; Peng, D.

Oxygen transfer during single silicon crystal growth in Czochralski system with vertical magnetic fields
pp. 238-242(5)
Authors: Frigerio, E.; Magi, N.; Benecchi, A.; Pianezzola, E.; Benedetti, M.S.; Kakimoto, K.; Eguchi, M.; Yi, K.

SixGe1-x single crystals grown by the RF-heated float zone technique
pp. 243-248(6)
Authors: deutsch, J.C.; Santhosh-Kumar, C.R.; Wollweber, J.; Schulz, D.; Schroder, W.

Numerical prediction of operational parameters in Czochralski growth of large-scale Si
pp. 249-258(10)
Authors: Martinez, R.C.; Gonzalo, E.R.; Dominguez, A.I.M.; Alvarez, J.D.; Mendez, J.H.; Chung, H.; Yoon J.-K.; Lee, S.

Growth of molybdenum-based alloy single crystals using electron beam zone melting
pp. 259-265(7)
Authors: Bagur, M.G.; Evangelista, D.G.; Sanchez-Vinas, M.; Liu, J.; Zee, R.H.

The formation mechanisms of dislocations and negative crystals in LiB3O5 single crystals
pp. 266-271(6)
Authors: Hu, X.B.; Jiang, S.S.; Huang, X.R.; Zeng, W.; Liu, W.J.; Chen, C.T.; Zhao, Q.L.; Jiang, J.H.; Wang, Z.G.; Tian, Y.L.; Han, Y.

The growth and optical assessment of Cr3+-doped RX(BO3)4 crystals with R = Y, Gd; = Al, Sc
pp. 272-278(7)
Authors: Harmon, B.J.; Leesong, I.; Regnier, F.E.; Wang, G.; Han, T.P.J.; Gallagher, H.G.; Henderson, B.

Floating zone growth and characterization of aluminum-doped rutile single crystals
pp. 279-284(6)
Authors: Font, G.; Manes, J.; Molto, J.C.; Pico, Y.; Hatta, K.; Higuchi, M.; Takahashi, J.; Kodaira, K.

Hydrothermal single crystal growth of calcite in ammonium acetate solution
pp. 285-294(10)
Authors: Sajonz, P.; Tong, Y.; Guoming, Z.; Fornstedt, T.; Guiochon, G.; Yanagisawa, K.; Feng, Q.; Ioku, K.; Yamasaki, N.

Kinetics of growth and dissolution of fluorapatite
pp. 295-303(9)
Authors: Celotti, E.; Ferrarini, R.; Zironi, R.; Conte, L.S.; Christoffersen, M.R.; Johansen, T.; Christoffersen, J.

Some new aspects of surface nucleation applied to the growth and dissolution of fluorapatite and hydroxyapatite
pp. 304-310(7)
Authors: Christoffersen, M.R.; Johansen, T.; Christoffersen, J.

Hydrothermal growth of carbonate-containing hydroxyapatite single crystals
pp. 311-317(7)
Authors: Jandera, P.; Fischer, J.; Ito, A.; Nakamura, S.; Aoki, H.; Akao, M.; Tateishi, T.; Teraoka, K.; Tsutsumi, S.; Onuma, K.

Nucleation and growth kinetics of barium sulphate in batch precipitation
pp. 318-328(11)
Authors: Nakayama, H.; Uchida, K.; Shinkai, F.; Shinoda, T.; Okuyama, T.; Seta, K.; Isobe, T.; Garside, J.; Tavare, N.S.; Taguchi, K.

The case for a dynamic contact angle in containerless solidification
pp. 329-338(10)
Authors: Betts, T.J.; Worster, M.G.; Davis, S.H.; Anderson, D.M.

Replication of steps from substrate surface to superlattice interfaces
pp. 339-342(4)
Authors: Solfrizzo, M.; Visconti, A.; Li, M.; Cui, S.F.; Dong, C.; Cheng, H.; Wu, F.; Cui, Q.; Mai, Z.H.

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