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Publisher: Elsevier

Volume 162, Number 3, May 1996

On the nucleation and composition analysis of InAs1-xPx during vapour phase epitaxial growth
pp. 113-120(8)
Authors: Toreson, H.; Eriksson, B.; Gopalakrishnan, N.; Dhanasekaran, R.

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Growth of AlPSb and GaPSb on InP by gas-source molecular beam epitaxy
pp. 121-125(5)
Authors: Sakiyama, N.; Kataoka, H.; Makita, M.; Shimomura, H.; Anan, T.; Sugou, S.

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Non-abruptness of heterointerfaces during LPE growth of (Hg,Cd) Te on (Cd,Zn)Te and Cd(Te,Se) substrates
pp. 126-134(9)
Authors: Londero, D.; Lo Greco, P.; Schenk, M.; Utke, I.; Hahnert, I.; Kirmse, H.; Muller, O.; Winkler, M.; Frentrup, W.

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GaSe/Si(111) heteroepitaxy: The early stages of growth
pp. 135-141(7)
Authors: Y., X.; Liapis, A.I.; Petroff, J.F.; Zheng, Y.; Koebel, A.; Boulliard, J.C.; Capelle, B.; Eddrief, M.

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Growth of high temperature -quartz from supercritical aqueous fluids
pp. 142-146(5)
Authors: Oguri, S.; Uchida, C.; Mishina, M.; Miki, Y.; Kakehi, K.; Balitsky, V.S.; Bublikova, T.M.; Balitskaya, L.V.; Kalinichev, A.G.

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Preparation of epitaxial oxide thin films on Si(100) substrates with CoSi2 surface layers
pp. 147-153(7)
Authors: Masar, M.; Kaniansky, D.; Madajova, V.; Li, Y.; Linzen, S.; Seidel, P.; Machalett, F.; Schmid, F.

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Growth and characterization of pure, and doped crystals of potassium niobate
pp. 161-166(6)
Authors: Richmond, R.; Durugkar, P.D.; Katpatal, A.G.

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Protein crystallization in low gravity by step gradient diffusion method
pp. 167-172(6)
Authors: Graham, K.N.; Sarna, L.P.; Webster, G.R.B.; Gaynor, J.D.; H., Y.F.N.; Sygusch, J.; Coulombe, R.; Cassanto, J.M.; Sportiello, M.G.; Todd, P.

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Growth stability in high temperature vapour growth
pp. 173-177(5)
Authors: Carducci, C.; Birarelli, M.; Leuzzi, V.; Santagata, G.; Serafini, P.; Antonozzi, I.; Grasza, K.; Jedrzejczak, A.

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An analysis of the onset of compositional convection in a binary melt solidified from below
pp. 182-189(8)
Authors: Singh, R.P.; Abbas, N.M.; Smesko, S.A.; Choi, C.K.; Hwang, I.G.

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