Publisher: Elsevier

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Volume 161, Number 1, April 1996

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Growth and homogeneity region of CdTe
pp. 12-15(4)
Author: Ivanov, Y.M.

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Effect of CdTe 'postmelting'
pp. 16-19(4)
Authors: Shcherbak, L.; Feichouk, P.; Panchouk, O.

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Attempts to growth of undoped CdTe single crystals with high electrical resistivity
pp. 28-33(6)
Authors: Rudolph, P.; Kawasaki, S.; Yamashita, S.; Yamamoto, S.; Usuki, Y.; Konagaya, Y.; Matada, S.; Fukuda, T.

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Stress birefringence in vapour-grown CdTe and its correlation to the growth techniques
pp. 34-39(6)
Authors: Laasch, M.; Kloess, G.; Kunz, T.; Schwarz, R.; Eiche, C.; Benz, K.W.; Grasza, K.

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Growth and characterization of twin-free ZnSe single crystals by the vertical Bridgman method
pp. 45-50(6)
Authors: Fukuda, T.; Rudolph, P.; Koh, H.J.; Umetsu, K.; Iida, S.; Uchiki, H.; Tsuboi, N.

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Vapour growth and characterization of bulk ZnSe single crystals
pp. 51-59(9)
Authors: Korostelin, Y.V.; Kozlovsky, V.I.; Shapkin, P.V.; Nasibov, A.

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Seeded melt growth of ZnSe crystals under Zn partial pressure
pp. 60-63(4)
Authors: Kikuma, I.; Shiohara, T.

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Fundamental studies of p-type doping of CdTe
pp. 73-81(9)
Authors: Hwang, H.L.; Hsu, K.Y.J.; Ueng, H.Y.

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Transmutation doping of wide-bandgap II?VI compounds
pp. 82-85(4)
Authors: Wienecke, M.; Bollmann, J.; Rohrich, J.; Maass, K.; Reinhold, B.; Forkel-Wirth, D.

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Generation of atomic group V materials for the p-type doping of wide gap II?VI semiconductors using a novel plasma cracker
pp. 86-89(4)
Authors: Lugauer H.-J.; Waag, A.; Worschech, L.; Ossau, W.; Landwehr, G.

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Evidence for thermodynamically stable p/n junction, formed by Ag doping of (Hg,Cd)Te
pp. 90-93(4)
Authors: Cahen, D.; Lyubomirsky, I.; Lyakhovitskaya, V.; Guillemoles, J.F.; Riess, I.; Triboulet, R.

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Matrix and impurity element distributions in CdHgTe (CMT) and (Cd,Zn)(Te,Se) compounds by chemical analysis
pp. 104-118(15)
Authors: Capper, P.; O'Keefe, E.S.; Maxey, C.; Dutton, D.; Mackett, P.; Butler, C.; Gale, I.

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Native defect identification in II?VI materials
pp. 119-127(9)
Authors: Meyer, B.K.; Stadler, W.

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Defect recovery of ion-implanted CdTe
pp. 128-133(6)
Authors: deicher, M.; Burchard, A.; Magerle, R.; Freidinger, J.; Jahn, S.G.

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Cadmium vacancy related defects in MBE grown CdTe
pp. 134-138(5)
Authors: Worschech, L.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G.

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Characterization by diffuse X-ray scattering of damage in ion-implanted HgCdTe
pp. 139-143(5)
Authors: declemy, A.; Renault, P.O.

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Point defects in Te-rich CdTe
pp. 144-147(4)
Authors: Panchouk, O.; Fochouk, P.; Feichouk, P.

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Formation of low resistance contacts to p-CdTe by annealing autocatalytically deposited Ni?P alloy coatings
pp. 148-152(5)
Authors: Miles, R.W.; Duke, S.; Bates, J.R.; Carter, M.J.; Datta, P.K.; Hill, R.; Ghosh, B.

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Electrically active defects in detector-grade CdTe:Cl and CdZnTe materials grown by THM and HPBM
pp. 153-158(6)
Authors: Chibani, L.; Hage-Ali, M.; Siffert, P.

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Transmission electron microscopy of CdTe/CdS based solar cells
pp. 159-163(5)
Authors: Durose, K.; Loginov, Y.Y.; Al-Allak, H.M.; Galloway, S.A.; Oktik, S.; Brinkman, A.W.; Richter, H.; Bonnet, D.

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Conductivity conversion in CdTe layers
pp. 164-167(4)
Authors: Valdna, V.; Buschmann, F.; Mellikov, E.

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Lattice sites of Li in CdTe
pp. 168-171(4)
Authors: Alegria, A.; Barbera, R.; Farre, R.; Ferreres, M.; Lagarda, M.J.; Lopez, J.C.; Restle, M.; Bharuth-Ram, K.; Quintel, H.; Ronning, C.; Hofsass, H.; Wahl, U.; Jahn, S.G.

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Thermal stability of substitutional Ag in CdTe
pp. 172-176(5)
Authors: Jahn, S.G.; Hofsass, H.; Restle, M.; Ronning, C.; Quintel, H.; Bharuth-Ram, K.; Wahl, U.

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ZnSe1-xTex solid solutions
pp. 177-180(4)
Authors: Valdna, V.; Hiie, J.; Kallavus, U.; Mere, A.; Piibe, T.

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Palladium as impurity in ZnTe
pp. 181-185(5)
Authors: Hermann, S.; Mahnke, H.; Schumann, D.; Spellmeyer, B.; Sulzer, G.; Bollmann, J.; Reinhold, B.; Rohrich, J.; Wienecke, M.; Yankov, R.; Gumlich, H.

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A-centers modifying in CdTe?Yb crystals
pp. 186-189(4)
Authors: Nikonyuk, E.S.; Shlyakhovuy, V.Z.; Kovalets, M.O.; Kuchma, M.I.; Zakharuk, Z.I.; Frasuniak, V.M.

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Structural properties of CdTe and Hg1-xCdxTe epitaxial layers grown on sapphire substrates
pp. 195-200(6)
Authors: Sochinskii, N.V.; Soares, J.C.; Alves, E.; Franzosi, P.; Bernardi, S.; Dieguez, E.

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Self-compensation in halogen doped CdTe grown by molecular beam epitaxy
pp. 214-218(5)
Authors: Fischer, F.; Waag, A.; Worschech, L.; Ossau, W.; Scholl, S.; Landwehr, G.; Makinen, J.; Hautojarvi, P.; Corbel, C.

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Self-compensation studies in Cd-saturated In-doped CdTe
pp. 219-222(4)
Authors: Shcherbak, L.; Feichouk, P.; Fochouk, P.; Panchouk, O.

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Two stream diffusion of Hg into CdTe
pp. 223-228(6)
Authors: Ahmed, M.U.; Jones, E.D.; Mullin, J.B.; Stewart, N.M.

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Diffusivity of mercury vacancies in Hg0.8Cd0.2Te
pp. 229-233(5)
Authors: Neubert, M.; Jacobs, K.

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Oscillations of the composition of HgCdTe solid solution after laser annealing
pp. 234-238(5)
Authors: Ciach, R.; Faryna, M.; Pociask, M.; Sheregii, E.; Kunma, M.

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Transition-metal impurities in II-VI semiconductors: Characterization and switching of charge states
pp. 239-249(11)
Authors: Oi, N.; Kitahara, H.; Matsushita, Y.; Kisu, N.; Kreissl, J.; Schulz, H.

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Influence of zinc on the photorefractive behaviour of Cd1-xZnxTe:V
pp. 250-258(9)
Authors: Kyoung, R.K.; Jung, H.K.; Eun-ji, C.; Chan-min, J.; Martel, G.; Moisan, J.Y.; Lambert, B.; Gauneau, M.; Stephan, S.; Wolffer, N.; Gravey, P.; Aoudia, A.; Rzepka, E.; Marfaing, Y.; Triboulet, R.; Busch, M.C.; Hadj-Ali, M.; Koebel, J.M.; Siffert, P.; Bremond, G.; Zerrai, A.; Marrakchi, G.

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Vanadium in CdTe
pp. 259-263(5)
Authors: Christmann, P.; Hofmann, D.M.; Meyer, B.K.; Kreissl, J.; Schwarz, R.; Benz, K.W.

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Relationship between deep levels in vanadium-doped CdTe and photorefractive effect
pp. 264-270(7)
Authors: Tokuda, T.; Mori, M.; Yamada, T.; Zerrai, A.; Marrakchi, G.; Bremond, G.; Moisan, J.Y.; Martel, G.; Gauneau, M.; Lambert, B.; Gravey, P.; Wolffer, N.; Aoudia, A.; Marfaing, Y.; Triboulet, R.; Koebel, J.M.; Hadj-Ali, M.; Siffert, P.

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Noncontact characterization of CdTe doped with V or Ti
pp. 271-276(6)
Authors: Eiche, C.; Joerger, W.; Schwarz, R.; Benz, K.W.

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Identification of titanium dopants in CdS, CdSe and Cd(S,Se) crystals by luminescence and EPR methods
pp. 277-281(5)
Authors: Schulz H.-J.; Peka, P.; Lehr, M.U.; Dziesiaty, J.; Muller, S.

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Deep electron states in gallium-doped CdMnTe mixed crystals
pp. 282-285(4)
Authors: Szatkowski, J.; Hajdusianek, A.; Bieg, B.; Placzek-Popko, E.

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Defects study by photoluminescence and cathodoluminescence in vanadium doped CdZnTe
pp. 286-291(6)
Authors: Rzepka, E.; Lusson, A.; Riviere, A.; Aoudia, A.; Marfaing, Y.; Triboulet, R.

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