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Volume 158, Number 3, January 1996

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Observation of stacking faults and prismatic punching systems in silicon by light scattering tomography
pp. 191-196(6)
Authors: Saez, A.; de Barreda, D.G.; Gamon, M.; de la Cuadra, J.G.; Lorenzo, E.; Peris, C.; Kissinger, G.; Richter, H.; vanhellemont, J.; Claeys, C.

Growth of long-length 3 inch diameter Fe-doped InP single crystals
pp. 197-204(8)
Authors: Kohiro, K.; Ohta, M.; Oda, O.

Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications
pp. 210-216(7)
Authors: Driad, R.; Alexandre, F.; Benchimol, J.L.; Jusserand, B.; Sermage, B.; Juhel, M.; Launay, P.

Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4-1.8 eV interval of band gaps
pp. 217-223(7)
Authors: Bolkhovityanov, Y.B.; Jaroshevich, A.S.; Nomerotsky, N.V.; Revenko, M.A.; Trukhanov, E.M.

Experimental and numerical studies of thermocapillary convection in a floating zone like configuration
pp. 224-230(7)
Authors: Levenstam, M.; Amberg, G.; Andersson, M.; Carlberg, T.

A solid-liquid diffusion model for growth and dissolution of ternary alloys by liquid phase epitaxy
pp. 231-240(10)
Authors: Hayashi, Y.; Matsuda, R.; Poe, R.B.; Dost, S.; Kimura, M.; Qin, Z.

Study of generation of GaxIn1-xPyAs1-y transition layers obtained by liquid phase epitaxy
pp. 241-247(7)
Authors: Lim, C.K.; Olchowik, J.M.; Szymczuk, D.; Sadowski, W.

Nanostructure morphology and atomically resolved images of chains and planes of YBCO single crystals grown with different additives
pp. 248-254(7)
Authors: Narlikar, A.V.; Samanta, S.B.; Changkang, C.; Yongle, H.; Hodby, J.W.; Wanklyn, B.M.

In situ observation of crystallization of YBCO via the peritectic reaction
pp. 255-260(6)
Authors: Monde, T.; Kamiusuki, T.; Kuroda, T.; Mikumo, K.; Ohkawa, T.; Fukube, H.; Nishimura, Y.; Miyashita, S.; Yasuhara, Y.; Komatsu, H.

Morphology of an as-grown surface of SiC - determination of step flow direction
pp. 261-267(7)
Authors: Nakashima, K.; Inoue, K.; Mayahara, K.; Kuroda, N.; Hamachi, Y.; Akiyama, S.; Kulakov, M.A.

The preparation of highly oriented InSe films by electrodeposition
pp. 268-275(8)
Authors: Kishi, H.; Fujii, T.; Sato, G.; Igasaki, Y.; Fujiwara, T.

Layer morphology and growth mechanisms in barium ferrites
pp. 276-283(8)
Authors: Cairns-Smith, A.G.; Turner, G.; Baird, T.; Peacock, R.D.; Stewart, B.

Growth and properties of urea-doped triglycine sulfate (UrTGS) crystals
pp. 284-288(5)
Authors: Lal, R.B.; Chang, J.; Batra, A.K.

The gypsum-brushite system: Crystallization from solutions poisoned by phosphate ions
pp. 316-321(6)
Authors: Rinaudo, C.; Lanfranco, A.M.; Boistelle, R.

Growth rate enhancement of potash alum crystals by microcrystals
pp. 322-327(6)
Authors: Matsuoka, M.; Kamada, T.; Takiyama, H.

Dynamic pressure control for solution growth and its microgravity application
pp. 328-335(8)
Authors: Sanagi, M.M.; Ahmad, U.K.; Hassan, K.; Musa, G.; Sawada, T.; Takemura, K.; Shigematsu, K.; Yoda, S.; Kawasaki, K.

Habit changes in NaBrO3 crystals grown from an aqueous solution
pp. 336-339(4)
Authors: Inoue, T.; Holcomb, E.R.C.; Nishioka, K.

Topotaxy relationships in the transformation phosgenite-cerussite
pp. 340-345(6)
Authors: Pina, C.M.; Fernandez-Diaz, L.; Prieto, M.

Relaxation behavior in a solution system for crystal growth under microgravity
pp. 359-368(10)
Authors: Garcia-March, F.J.; Anton-Fos, G.M.; Perez-Gimenez, F.; Salabert-Salvador, M.T.; Cercos-del-Pozo, R.A.; de Julian-Ortiz, J.V.; Huo, C.; Xu, Z.; Huang, W.; Ge, P.; Zhu, Z.

Oscillations induced by purely diffusive processes in planar directional solidification from the melt
pp. 369-376(8)
Authors: van Vaerenbergh, S.; Legros, J.C.; Hennenberg, M.

Growth and cathodoluminescence study of CuAlSe2 single crystals
pp. 385-387(3)
Authors: Savchuk, V.A.; Korzoun, B.V.; Zhigunov, D.I.

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