Skip to main content

Publisher: Elsevier

Volume 157, Number 1, December 1995

Preface
pp. ix-ix(1)
Authors: Kasper, E.; Parker, E.H.C.

Favourites:
ADD

Quantitative analysis of light emission from SiGe quantum wells
pp. 1-10(10)
Authors: Fukatsu, S.; Akiyama, H.; Shiraki, Y.; Sakaki, H.

Favourites:
ADD

Optimisation and stability of optical spectra of novel Si-Ge quantum well structures in an external electric field
pp. 11-14(4)
Authors: Jaros, M.; Elfardag, G.; Hagon, J.P.; Turton, R.J.; Wong, K.B.

Favourites:
ADD

Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy
pp. 15-20(6)
Authors: Presting, H.; Brux, O.; Kibbel, H.; Zinke, T.; Gail, M.; Abstreiter, G.; Jaros, M.

Favourites:
ADD

The growth and characterization of Si1-xGex multiple quantum wells on Si(110) and Si(111)
pp. 21-26(6)
Authors: Thompson, P.E.; Twigg, M.E.; Fatemi, M.; Kreifels, T.L.; Gregg, M.; Hengehold, R.L.; Yeo, Y.K.; Simons, D.S.; Hobart, K.

Favourites:
ADD
Favourites:
ADD

Anomalous spectral shift of photoluminescence from MBE-grown strained Si1-xGex/Si quantum wells mediated by atomic hydrogen
pp. 36-39(4)
Authors: Ohta, G.; Hattori, T.; Fukastsu, S.; Usami, N.; Shiraki, Y.

Favourites:
ADD

Field-driven blue shift of excitonic photoluminescence in Si-Ge quantum wells and superlattices
pp. 40-44(5)
Authors: Kim, J.Y.; Usami, N.; Shiraki, Y.; Fukatsu, S.

Favourites:
ADD

Theory of electronic and optical properties of Si/Ge superlattices
pp. 45-51(7)
Authors: Theodorou, G.; Tserbak, C.

Favourites:
ADD

Photoluminescence study of SiGe quantum well broadening by rapid thermal annealing
pp. 57-60(4)
Authors: Lafontaine, H.; Houghton, D.C.; Aers, G.C.; Rowell, N.; Rinfret, R.

Favourites:
ADD

X-ray reciprocal space mapping of Si/Si1-xGex heterostructures
pp. 61-67(7)
Authors: Bauer, G.; Li, J.; Koppensteiner, E.

Favourites:
ADD

Test of Vegard's law in thin epitaxial SiGe layers
pp. 68-72(5)
Authors: Kasper, E.; Schuh, A.; Bauer, G.; Hollander, B.; Kibbel, H.

Favourites:
ADD
Favourites:
ADD

Characterization of highly boron-doped Si, Si1-xGex and Ge layers by high-resolution transmission electron microscopy
pp. 80-84(5)
Authors: Radamson, H.H.; Joelsson, K.B.; Ni, W.; Hultman, L.; Hansson, G.V.

Favourites:
ADD

Magnetotransport of epitaxial Si/Ge layers on Si
pp. 85-89(5)
Authors: Koschinski, W.; dettmer, K.; Kessler, F.R.

Favourites:
ADD
Favourites:
ADD

Thickness measurements of Si1-xGex thin layers deposited on Si mesa structures
pp. 96-99(4)
Authors: Gill, D.S.; Roush, D.J.; Shick, K.A.; Willson, R.C.; Wasserman, A.; Beserman, R.; dettmer, K.

Favourites:
ADD

Device quality of in situ plasma cleaning for silicon molecular beam epitaxy
pp. 100-104(5)
Authors: Hansch, W.; Eisele, I.; Kibbel, H.; Konig, U.; Ramm, J.

Favourites:
ADD

Electrical characteristics of Si/Ð3 x Ð3 B/Si(111) structures by gas-source MBE
pp. 105-108(4)
Authors: Matsumoto, S.; Uji, H.; Tatsukawa, S.; Higuchi, H.

Favourites:
ADD

Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon
pp. 109-112(4)
Authors: Parker, E.H.C.; Basaran, E.; Parry, C.P.; Kubiak, R.A.; Whall, T.E.

Favourites:
ADD

The role of strain in silicon-based molecular beam epitaxy
pp. 113-115(3)
Authors: Xie Y.-H.; Silverman, P.J.

Favourites:
ADD

Photoluminescence characterization of Si1-xGex relaxed "pseudo-substrates" grown on Si
pp. 116-120(5)
Authors: Bremond, G.; Souifi, A.; de Barros, O.; Benmansour, A.; Warren, P.; Dutartre, D.

Favourites:
ADD

Relaxed Si1-xGex films with reduced dislocation densities grown by molecular beam epitaxy
pp. 121-125(5)
Authors: Tanner, M.O.; Chu, M.A.; Wang, K.L.; Meshkinpour, M.; Goorsky, M.S.

Favourites:
ADD

Relaxation of compositionally graded Si1-xGex buffers: A TEM study
pp. 126-131(6)
Authors: Schaffler, F.; Hohnisch, M.; Herzog, H.

Favourites:
ADD

Dislocation patterning and nanostructure engineering in compositionally graded Si1-xGex/Si layer systems
pp. 132-136(5)
Authors: Shiryaev, S.Y.; Lundsgaard Hansen, J.; Nylandsted Larsen, A.; Jensen, F.; Wulff Petersen, J.

Favourites:
ADD

Strain relaxation and misfit dislocations in compositionally graded Si1-xGex layers on Si(001)
pp. 137-141(5)
Authors: Li, J.H.; Holy, V.; Bauer, G.; Hohnisch, M.; Herzog, H.; Schaffler, F.

Favourites:
ADD

Comparison of different Si/Ge alloy buffer concepts for (SimGen)p superlattices
pp. 142-146(5)
Authors: dettmer, K.; Behner, U.; Beserman, R.

Favourites:
ADD

Ge+ ion implantation - a competing technology?
pp. 147-160(14)
Authors: Hemment, P.L.F.; Christiano, F.; Nejim, A.; Lombardo, S.; Larssen, K.K.; Priolo, F.; Barklie, R.C.

Favourites:
ADD

Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth
pp. 161-167(7)
Authors: Chollet, F.; Andre, E.; vandervorst, W.; Caymax, M.

Favourites:
ADD

In situ RHEED and AFM investigation of growth front morphology evolution of Si(001) grown by UHV-CVD
pp. 168-171(4)
Authors: Nayak, S.; Savage, D.E.; Chu, H.; Lagally, M.G.; Kuech, T.F.

Favourites:
ADD

Magnetron sputter epitaxy of Si/Ge heterostructures
pp. 172-176(5)
Authors: Sutter, P.; Muller, E.; Tao, S.; Schwarz, C.; Filzmoser, M.; von Kanel, H.; Lenz, M.

Favourites:
ADD

Crystallization of a-Si1-xGex: Decomposition and modulated structure formation features
pp. 177-180(4)
Authors: Edelman, F.; Komem, Y.; Werner, P.; Heydenreich, J.; Butz, R.; Iyer, S.S.

Favourites:
ADD

Strain compensation in ternary Si1-x-yGexBy films
pp. 181-184(4)
Authors: Tillack, B.; Zaumseil, P.; Morgenstern, G.; Kruger, D.; Dietrich, B.; Ritter, G.

Favourites:
ADD

Modeling of facet growth on patterned Si substrate in gas source MBE
pp. 185-189(5)
Authors: Li, S.; Xiang, Q.; Wang, D.; Wang, K.L.

Favourites:
ADD

Effect of RTCVD growth conditions on the crystal quality of pseudomorphic Si1-x-yGexCy films
pp. 190-194(5)
Authors: Mi, J.; Warren, P.; Letourneau, P.; Judelewicz, M.; Gailhanou, M.; Dutoit, M.

Favourites:
ADD

Tunable infrared photoemission sensor on silicon using SiGe/Si epitaxial heterostructures
pp. 195-200(6)
Authors: Renard, C.; Sagnes, I.; Bodnar, S.; Badoz, P.A.

Favourites:
ADD

Plasma-enhanced evaporation of SiO2 films for MBE-grown MOS devices
pp. 201-206(6)
Authors: Neubecker, A.; Bieringer, P.; Hansch, W.; Eisele, I.

Favourites:
ADD

High speed SiGe heterobipolar transistors
pp. 207-214(8)
Authors: Schuppen, A.; Dietrich, H.

Favourites:
ADD

Si/Si1-xGex heterojunction bipolar transistors for microwave power applications
pp. 215-221(7)
Authors: Hobart, K.D.; Kub, F.J.; Papanicoloau, N.A.; Kruppa, W.; Thompson, P.E.

Favourites:
ADD

Assessment of intervalley f-scattering time constants in Si/SiGe heterostructures
pp. 222-226(5)
Authors: Beisswanger, F.; Jorke, H.; Kibbel, H.; Herzog, H.; Schuppen, A.; Sauer, R.

Favourites:
ADD

Photo-induced intersubband absorption in Si/SiGe quantum wells
pp. 227-230(4)
Authors: Boucaud, P.; Gao, L.; Visocekas, F.; Moussa, Z.; Lourtioz, J.; Julien, F.H.; Sagnes, I.; Campidelli, Y.; Badoz, P.; Vagos, P.

Favourites:
ADD
Favourites:
ADD

Interface reaction between Ir films and relaxed SiGe MBE layers by rapid thermal annealing
pp. 236-241(6)
Authors: Curello, G.; Gwilliam, R.; Harry, M.; Reeson, K.J.; Sealy, B.J.; Rodriguez, T.; Almendra, A.

Favourites:
ADD

Some critical issues on growth of high quality Si and SiGe films using a solid-source molecular beam epitaxy system
pp. 242-247(6)
Authors: Ni W.-X.; Chen, W.M.; Buyanova, I.A.; Henry, A.; Hansson, G.V.; Monemar, B.

Favourites:
ADD

Silicon nanostructure devices
pp. 248-254(7)
Authors: Eisele, I.; Baumgatner, H.; Hansch, W.

Favourites:
ADD

Islands formation conditions in silicon-germanium alloys grown by MBE
pp. 255-259(5)
Authors: Murri, R.; Pinto, N.; Trojani, L.; Mengucci, P.; Lucchetti, L.; Majni, G.

Favourites:
ADD

Self-organized MBE growth of Ge-rich SiGe dots on Si(100)
pp. 260-264(5)
Authors: Schittenhelm, P.; Gail, M.; Abstreiter, G.

Favourites:
ADD

Photoluminescence investigation on growth mode changeover of Ge on Si(100)
pp. 265-269(5)
Authors: Sunamura, H.; Usami, N.; Shiraki, Y.; Fukatsu, S.

Favourites:
ADD

Local epitaxy of Si/SiGe wires and dots
pp. 270-275(6)
Authors: Abstreiter, G.; Brunner, J.; Jung, W.; Schittenhelm, P.; Gail, M.; Gonderman, J.; Hadam, B.; Koester, T.; Spangenberg, B.; Roskos, H.G.; Kurz, H.; Gossner, H.; Eisele, I.

Favourites:
ADD

Silicon molecular beam epitaxial growth on ultra-small mesa structures
pp. 276-279(4)
Authors: Avrutin, V.S.; Izumskaya, N.F.; Vyatkin, A.F.; Yunkin, V.A.

Favourites:
ADD

Photoluminescence and Raman spectroscopy of Si/Si1-xGex quantum dots
pp. 280-284(5)
Authors: Tang, Y.S.; Torres, C.M.S.; Dietrich, B.; Kissinger, W.; Whall, T.E.; Parker, E.H.C.

Favourites:
ADD

A silicon molecular beam epitaxy system dedicated to device-oriented material research
pp. 285-294(10)
Authors: Ni W.-X.; Ekberg, J.O.; Joelsson, K.B.; Radamson, H.H.; Henry, A.; Shen, G.; Hansson, G.V.

Favourites:
ADD

Adsorption and desorption of atomic hydrogen on Si(001) and its effects on Si MBE
pp. 295-299(5)
Authors: Sakamoto, K.; Matsuhata, H.; Miki, K.; Sakamoto, T.

Favourites:
ADD

Investigation of Si-substrate preparation for GaAs-on-Si MBE growth
pp. 300-303(4)
Authors: Georgakilas, A.; Kayambaki, M.; Callec, R.; Constantinidis, G.; Papavassiliou, C.; Papadakis, N.; Panayotatos, P.; Lochtermann, E.; Krasny, H.

Favourites:
ADD
Favourites:
ADD
Favourites:
ADD

Roughening of SiGe layers grown with gas-source MBE: Dependence on Ge concentration and growth temperature
pp. 312-316(5)
Authors: Storm, A.B.; Lukey, P.W.; Werner, K.; Caro, J.; Radelaar, S.

Favourites:
ADD

Segregation of interface carbon during silicon epitaxial growth by UHV-CVD
pp. 323-326(4)
Authors: Aoyama, T.; Suzuki, T.; Arai, K.; Tatsumi, T.

Favourites:
ADD

In situ real-time temperature and thickness measurement for Si/SiGe growth on MBE and RTCVD systems
pp. 327-332(6)
Authors: Moller, H.; Hertel, B.; Lindenberg, T.; Bobel, F.G.; Ritter, G.

Favourites:
ADD

Incorporation kinetics of rare earth impurities in Si during molecular beam epitaxy
pp. 333-337(5)
Authors: Miyashita, K.; Shiraki, Y.; Houghton, D.C.; Fukatsu, S.

Favourites:
ADD

Growth of low-dimensional structures on nonplanar patterned substrates
pp. 338-343(6)
Authors: Hobart, K.D.; Gray, H.F.; Twigg, M.E.; Park, D.; Thompson, P.E.; Kub, F.J.

Favourites:
ADD

Formation of buried a-Si/Al/Si, a-Si/Sb/Si and a-Si/B/Si interfaces and their electrical properties
pp. 344-348(5)
Authors: Zotov, A.V.; Wittmann, F.; Lechner, J.; Ryzhkov, S.V.; Lifshits, V.G.; Eisele, I.

Favourites:
ADD

Arsenic doping in Si-MBE using low energy ion implantation (LEII)
pp. 349-352(4)
Authors: Gravesteijn, D.J.; Collart, E.J.H.; Lathouwers, E.G.C.; Kersten, W.J.

Favourites:
ADD

Radiative recombination processes in p-type modulation-doped SiGe quantum wells and Si epilayers
pp. 362-366(5)
Authors: Buyanova, I.A.; Chen, W.M.; Henry, A.; Ni, W.; Hansson, G.V.; Monemar, B.

Favourites:
ADD

Electron mobility enhancement in a strained Si channel
pp. 367-372(6)
Authors: Garchery, L.; Sagnes, I.; Warren, P.; Badoz, P.A.; Dupuy, J.

Favourites:
ADD

Electron heating effect on transport properties in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy
pp. 373-377(5)
Authors: Matsumura, A.; Thornton, T.J.; Fernandez, J.M.; Holmes, S.N.; Zhang, J.; Joyce, B.A.

Favourites:
ADD

Hole confinement in boron -doped Si quantum wells studied by admittance spectroscopy
pp. 378-381(4)
Authors: Wang, X.; Zhu, J.; Gong, D.; Zhang, B.; Lu, F.; Sheng, C.; Sun, H.

Favourites:
ADD

Observation of piezoelectric-like behaviour in coherently strained B-doped(100) SiGe/Si heterostructures
pp. 382-385(4)
Authors: Mironov, O.A.; Braithwaite, G.; Parker, E.H.C.; Philips, P.J.; Whall, T.E.; Khizhny, V.I.; Gnezdilov, V.P.

Favourites:
ADD

Optical and electronic properties of SiGeC alloys grown on Si substrates
pp. 386-391(6)
Authors: Kolodzey, J.; Berger, P.R.; Orner, B.A.; Hits, D.; Chen, F.; Khan, A.; Shao, X.; Waite, M.M.; Shah, S.I.; Swann, C.P.; Unruh, K.M.

Favourites:
ADD

Early stages of growth of -SiC on Si by MBE
pp. 392-399(8)
Authors: Papaioannou, V.; Stoemenos, J.; Zekentes, K.; Pecz, B.

Favourites:
ADD

MBE growth of ternary SnGeSiGe superlattices
pp. 400-404(5)
Authors: Dondl, W.; Silveira, E.; Abstreiter, G.

Favourites:
ADD

Strain-stabilized structures on silicon grown with MBE
pp. 405-409(5)
Authors: Osten, H.J.; Rucker, H.; Methfessel, M.; Bugiel, E.; Ruvimov, S.; Lippert, G.

Favourites:
ADD

Optical properties of bulk and multi-quantum well SiGe: C heterostructures
pp. 410-413(4)
Authors: Boucaud, P.; Guedj, C.; Bouchier, D.; Julien, F.H.; Lourtioz, J.; Bodnar, S.; Regolini, J.L.; Finkman, E.

Favourites:
ADD

Thermal stability of Si/Si1-x-yGexCy/Si heterostructures grown by rapid thermal chemical vapor deposition
pp. 414-419(6)
Authors: Warren, P.; Mi, J.; Overney, F.; Dutoit, M.

Favourites:
ADD

A particular epitaxial Si1-yCy alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy
pp. 420-425(6)
Authors: Claverie, A.; Faure, J.; Balladore, J.L.; Simon, L.; Mesli, A.; Kubler, L.; Diani, M.; Aubel, D.

Favourites:
ADD

Molecular beam epitaxial grown Si1-xCx layers on Si(001) as a substrate for MWCVD of diamond
pp. 426-430(5)
Authors: Gutheit, T.; Heinau, M.; Fusser, H.; Wild, C.; Koidl, P.; Abstreiter, G.

Favourites:
ADD

Synthesis of epitaxial Si1-yCy alloys on Si(001) with high level of non-usual substitutional carbon incorporation
pp. 431-435(5)
Authors: Kubler, L.; Diani, M.; Bischoff, J.L.; Grob, J.J.; Prevot, B.; Mesli, A.

Favourites:
ADD

Realization of Si1-x-yGexCy/Si heterostructures by pulsed laser induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)
pp. 436-441(6)
Authors: Boulmer, J.; Boucaud, P.; Guedj, C.; debarre, D.; Bouchier, D.; Finkman, E.; desmur-Larre, A.; Prawer, S.; Nugent, K.; Godet, C.; Roca i Cabarrocas, P.

Favourites:
ADD

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
X
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more