Publisher: Elsevier

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Volume 155, Number 3, October 1995

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Some aspects of GaN growth on GaAs(100) substrates using molecular beam epitaxy with an RF activated nitrogen-plasma source
pp. 157-163(7)
Authors: Foxon, C.T.; Cheng, T.S.; Jenkins, L.C.; Lacklison, D.E.; Orton, J.W.; Bestwick, T.; Kean, A.; Dawson, M.; Duggan, G.; Hooper, S.E.

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MBE growth of lattice-matched metal/semiconductor structures
pp. 179-182(4)
Authors: Nakao, H.; Mori, T.; Muto, S.; Yokoyama, N.

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Generation kinetics of pyramidal hillock and crystallographic defect on Si(111) vicinal surfaces grown with SiH2Cl2
pp. 183-192(10)
Authors: Mazumder, M.K.; Mashiko, Y.; Koyama, M.H.; Takakuwa, Y.; Miyamoto, N.

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Low temperature liquid phase epitaxy of silicon from gallium solution
pp. 193-197(5)
Authors: Ogawa, H.; Guo, Q.; Ohta, K.

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Growth morphology of low-pressure metalorganic chemical vapor deposition silicon carbide on a-SiO2/Si(100) substrates
pp. 214-222(9)
Authors: Rodriguez-Viejo, J.; Clavaguera-Mora, M.T.; Stoemenos, J.; Clavaguera, N.

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Synthesis, crystal structure and optical properties of a novel zinc samarium phosphide (Zn3SmP3)
pp. 223-228(6)
Authors: Tejedor, P.; Hollander, F.J.; Stacy, A.M.; Fayos, J.

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Precipitation of strontium sulfate in aqueous solutions at 25oC
pp. 240-246(7)
Authors: Malollari, I.X.; Koutsoukos, P.G.; Klepetsanis, P.G.

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The shape of a growing crystal: A numerical study
pp. 260-265(6)
Author: Rakin, V.I.

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Growth interruption induced interface microroughness in single quantum wells
pp. 272-275(4)
Authors: Luo C.-P.; Chin, M.; Yuan, Z.; Xu, Z.Y.; Yang, X.P.; Zhang, P.H.

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The morphological stability in supercritical fluid chemical deposition of films near the critical point
pp. 276-285(10)
Authors: Louchev, O.A.; Popov, V.K.; Antonov, E.N.

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