Journal of Crystal Growth

Numerical analysis of melt-solid interface shapes and growth rates of gallium antimonide in a single-zone vertical Bridgman furnace
pp. 213-222(10)
Authors: Bhata H.L.; Kumar V.; Bhat H.L.; Dutta P.S.

Thermal behaviour of aluminium films grown by molecular beam epitaxy on GaAs
pp. 223-230(8)
Authors: Bangert U.; Tang B.; Missous M.

Zn -doped GaAs grown by metalorganic vapour phase epitaxy
pp. 231-239(9)
Authors: Li G.; Jagadish C.; Linnarsson M.

Position dependent growth rate and composition of low pressure organometallic vapour phase epitaxy grown InGaP and AlGaAs on GaAs inverted mesa grooves
pp. 240-250(11)
Authors: Anders M.J.; Bongers M.M.G.; Bastos P.L.; Giling L.J.

The role of the initial nucleation stage in microstructural development for CdTe grown on heat-cleaned 2^o-off (001)GaAs by metalorganic chemical vapour deposition
pp. 251-261(11)
Authors: Cheng T.T.; Aindow M.; Jones I.P.; Hails J.E.; Williams D.J.

Transmission electron microscope study of surface steps on SiGe/Si(001) superlattices produced by differential etching
pp. 262-268(7)
Authors: Atici Y.; Cherns D.

A transmission electron microscopy structural analysis of GaSe thin films grown on Si(111) substrates
pp. 269-274(6)
Authors: Koebel A.; Zheng Y.; Petroff J.F.; Eddrief M.; Vinh L.T.; Sebenne C.

Czochralski growth of Ge_1-xSi_x alloy crystals
pp. 275-279(5)
Authors: Yonenaga I.; Matsui A.; Tozawa S.; Sumino K.; Fukuda T.

Role of crucible partition in improving Czochralski melt conditions
pp. 280-292(13)
Authors: Prasad V.; Jafri I.H.; Anselmo A.P.; Gupta K.P.

Study on SmBa₂Cu₃O_y whisker-like crystals and their morphology
pp. 293-296(4)
Authors: Zhang H.; Wang G.; Wu H.

Temperature dependence of growth of diamond from a Cu-C system under high pressure
pp. 297-302(6)
Authors: Kanda H.; Singhal S.K.

Growth of 3C-SiC on on-axis Si(100) substrates by chemical vapor deposition
pp. 303-314(12)
Authors: Kordina O.; Bjorketun L.-O.; Henry A.; Hallin C.; Glass R.C.; Janzen E.; Sundgren J.-E.; Hultman L.

Growth of bulk Cu_0.85In_1.05Se₂ and characterization on a micro scale
pp. 315-321(7)
Authors: Benz K.W.; Hornung M.; Margulis L.; Schmid D.; Schock H.W.

Growth and characterization of CuFeO₂ single crystals
pp. 322-328(7)
Authors: Zhao T.-r.; Hasegawa M.; Takei H.; Zhao T.-R.

Growth of MgCr₂O₄ whiskers
pp. 329-333(5)
Authors: Hashimoto S.; Yamaguchi A.

Single crystal growth of transition metal antimonates AB₂O₆ from V₂O₅-B₂O₃ fluxes
pp. 334-338(5)
Authors: Greedan J.E.; Nakua A.M.

Preparation and characterization of Zn_xSr_1-xS compound thin films
pp. 339-350(12)
Authors: Kitagawa M.; Lee S.T.; Suzukawa R.; Ichino K.; Kobayashi H.

Volume change effect on the salt-finger stability of directionally solidifying ammonium chloride solution
pp. 351-363(13)
Authors: Chen F.; Lee Y.C.

On the formation of dislocation etch pits on L-arginine phosphate monohydrate single crystals
pp. 364-369(6)
Authors: Samgwal K.; Veintemillas-Verdaguer S.; Torrent-Burgues J.; Sangwal K.

Stagnant film model of the effect of natural convection on the dendrite operating state
pp. 370-376(7)
Authors: Sekerka R.F.; McFadden G.B.; Coriell S.R.

Optimum stability conjecture for the role of interface kinetics in selection of the dendrite operating state
pp. 377-385(9)
Author: Sekerka R.F.

Simulations of experimentally observed dendritic growth behavior using a phase-field model
pp. 386-400(15)
Authors: Murray B.T.; Wheeler A.A.; Glicksman M.E.

Determination of the lattice constants of epitaxial layers
pp. 401-409(9)
Authors: Fons P.; Bottomley D.J.; Tweet D.J.

Iron doped GaInP for selective regrowth around GaAs mesas
pp. 410-414(5)
Authors: Lourdudoss S.; Holz R.; Landgren G.; Kjebon O.

New organic nonlinear optical crystals of 1-(3-thienyl)-3-(4-bromophenyl)-propene-1-one
pp. 415-417(3)
Authors: Youping H.; Genbo S.; Bochang W.; Rihong J.

Single crystal growth of some uranium tellurides
pp. 418-421(4)
Authors: Shlyk L.; Stepien-Damm J.; Troc A.