Molecular-beam-epitaxy growth of strained Ga_1-x In_xAs/AlInAs/InP and application to 1.55 m multi-quantum-well lasers

Authors: Nishikata K.; Shimizu H.; Hirayama Y.; Matsuda T.; Iwase F.; Irikawa M.

Source: Journal of Crystal Growth, Volume 150, Number unknown, 1 May 1995 , pp. 1328-1332(5)

Publisher: Elsevier

Language: English

Document Type: Research article

DOI: http://dx.doi.org/10.1016/0022-0248(95)80154-5

Affiliations: 1: Yokohama R&D Laboratories, Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, 220, Yokohama, Japan

Publication date: 1995-05-01

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• In this Subject: Chemistry (General)
• By this author: Nishikata K. ;  Shimizu H. ;  Hirayama Y. ;  Matsuda T. ;  Iwase F. ;  Irikawa M.

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