Reduction of p-ZnSe/p-GaAs non-ohmic barrier by inserting a GaN buffer layer

Authors: Hishida Y.; Yoshie T.; Yagi K.; Yamaguchi T.; Niina T.

Source: Journal of Crystal Growth, Volume 150, Number unknown, 1 May 1995 , pp. 828-832(5)

Publisher: Elsevier

Language: English

Document Type: Research article

DOI: http://dx.doi.org/10.1016/0022-0248(95)80055-H

Affiliations: 1: Microelectronics Research Center, Sanyo Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, 573, Osaka, Japan

Publication date: 1995-05-01

• In this: publication
• By this: publisher
• In this Subject: Chemistry (General)
• By this author: Hishida Y. ;  Yoshie T. ;  Yagi K. ;  Yamaguchi T. ;  Niina T.

Website © Publishing Technology. Article copyright remains with the publisher, society or author(s) as specified within the article.

• Terms and conditions
• Privacy policy
• Information for advertisers