Journal of Crystal Growth

Preface
pp. xi-xi(1)
Authors: Hiyamizu S.; Shiraki Y.; Gonda S.

Editorial Board
pp. FM2-FM2(1)

Twenty years of molecular beam epitaxy
pp. 1-6(6)
Author: Cho A.Y.

Less than 10 defects/cm² . m in molecular beam epitaxy grown GaAs by arsenic cracking
pp. 7-12(6)
Authors: Izumi S.; Hayafuji N.; Sonoda T.; Takamiya S.; Mitsui S.

Arsenic-free GaAs substrate preparation and direct growth of GaAs/AlGaAs multiple quantum well without buffer layer
pp. 13-17(5)
Authors: Iizuka K.; Matsumaru K.; Suzuki T.; Hirose H.; Suzuki K.; Okamoto H.

In-situ Al_0.24Ga_0.24In_0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth
pp. 18-22(5)
Authors: Kunzel H.; Bochnia R.; Bottcher J.; Harde P.; Hase A.; Griebenow U.

Surface reconstructions and growth mode transitions of AlAs(100)
pp. 23-27(5)
Authors: Dabiran A.M.; Cohen P.I.

Formation and characterization of GaAs/As superlattice grown by molecular beam epitaxy at low substrate temperature
pp. 28-32(5)
Authors: Cheng T.M.; Chang C.Y.; Huang J.H.

Surface reconstruction of sulfur-terminated GaAs(001) observed during annealing process by scanning tunneling microscopy
pp. 33-37(5)
Authors: Tsukamoto S.; Koguchi N.

Studies on interface roughness scattering effects in molecular beam epitaxy grown resonant tunneling structures
pp. 38-42(5)
Authors: Hoshida T.; Tsuchiya M.; Nakamura Y.; Kamiya T.

Influence of growth related thickness fluctuations on the spectral and lateral luminescence intensity distribution in GaAs quantum wells
pp. 43-48(6)
Authors: Jahn U.; Fujiwara K.; Hey R.; Kastrup J.; Grahn H.T.; Menniger J.

Observation of spatially-indirect transition and accurate determination of band offset ratio by excitation spectroscopy on GaAs/AlGaAs quantum wells lightly doped with Be acceptors
pp. 49-53(5)
Authors: Muraki K.; Fukatsu S.; Shiraki Y.; Takahashi Y.

In situ film thickness and temperature control of molecular beam epitaxy growth by pyrometric interferometry
pp. 54-61(8)
Authors: Boebel F.G.; Moller H.; Hertel B.; Grothe H.; Schraud G.; Schroder S.; Chow P.

Simultaneous monitoring of different surface processes on different streaks of the reflection high energy electron diffraction pattern
pp. 62-67(6)
Authors: Braun W.; Ploog K.

Surface diffusion length of Ga adatoms in molecular-beam epitaxy on GaAs(100)-(110) facet structures
pp. 68-72(5)
Authors: Lopez M.; Nomura Y.

Surface flattening by annealing after molecular beam epitaxy growth revealed by in-situ secondary electron microscopy
pp. 73-76(4)
Authors: Osaka J.; Homma Y.; Inoue N.

Reflection high-energy electron diffraction intensity oscillations during growth of (Al,Ga)As on GaAs(111)A
pp. 77-80(4)
Authors: Sato K.; Fahy M.R.; Kamiya I.; Neave J.H.; Joyce B.A.

90^o double reflection high-energy electron diffraction experiments on vicinal surfaces of GaAs
pp. 81-84(4)
Authors: Norenberg H.; Daweritz L.; Schutzendube P.; Schonherr H.-P.; Ploog K.

In-situ X-ray imaging of III-V strained-layer relaxation processes
pp. 85-91(7)
Authors: Whitehouse C.R.; Cullis A.G.; Barnett S.J.; Usher B.F.; Clark G.F.; Keir A.M.; Tanner B.K.; Lunn B.; Hogg J.C.H.; Johnson A.D.; Lacey G.; Spirkl W.; Hagston W.E.; Jefferson J.H.; Ashu P.; Smith G.W.; Martin T.

In-situ second-harmonic generation study of the molecular beam epitaxy growth of GaAs
pp. 92-95(4)
Authors: Kimura T.; Yamada C.

In-situ photoluminescence and capacitance-voltage characterization of InAlAs/InGaAs regrown heterointerfaces by molecular beam epitaxy
pp. 96-100(5)
Authors: Saitoh T.; Tomozawa H.; Nakagawa T.; Takeuchi H.; Hasegawa H.

Structural transformation of As-stabilized surfaces caused by Ga-deposition detected by time-resolved surface photo-absorption
pp. 101-106(6)
Authors: Uwai K.; Kobayashi N.

Nucleation of islands in GaAs molecular beam epitaxy studied by in-situ scanning electron microscopy
pp. 107-109(3)
Authors: Inoue N.; Osaka J.; Homma Y.

Real-time scanning microprobe reflection high-energy electron diffraction observations of the cleaning process of GaAs substrates
pp. 110-116(7)
Authors: Morishita Y.; Goto S.; Nomura Y.; Isu T.; Katayama Y.

Simultaneous reflection high-energy electron diffraction oscillations and mass spectroscopy investigations during molecular beam epitaxy growth of (001) GaAs - smooth surfaces or stoichiometric films?
pp. 117-122(6)
Authors: Heyn C.; Harsdorff M.

Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures
pp. 123-127(5)
Authors: Bruni M.R.; Gambacorti N.; Kaciulis S.; Mattogno G.; Simeone M.G.; Quagliano L.G.; Tomassini N.; Jusserand B.

Studies of large scale unstable growth formed during GaAs(001) homoepitaxy
pp. 128-135(8)
Authors: Orme C.; Johnson M.D.; Leung K.-T.; Orr B.G.; Smilauer P.; Vvedensky D.

Surface structure of GaAs(001)-(2 x 4) , and phases
pp. 136-143(8)
Authors: Ichimiya A.; Xue Q.-K.; Hashizume T.; Sakurai T.

GaAs initial growth on InAs (001) vicinal surfaces observed by scanning tunneling microscopy
pp. 144-147(4)
Authors: Ikoma N.; Ohkouchi S.

Unified model for first-order transition and electrical properties of InAs (001) surfaces based on atom-resolved scanning tunneling microscopy imaging
pp. 148-151(4)
Authors: Yamaguchi H.; Horikoshi Y.

Atomic force microscope observation of the initial stage of InAs growth on GaAs substrates
pp. 152-157(6)
Authors: Kitabayashi H.; Waho T.

Theoretical investigation of adsorption behavior during molecular beam epitaxy growth of GaAs: ab initio based microscopic calculation
pp. 158-162(5)
Authors: Shiraishi K.; Ito T.

Ab initio study on the As-stabilized surface structure in AlAs molecular beam epitaxy
pp. 163-167(5)
Authors: Hiraoka Y.S.; Mashita M.

Kinetic Ising model of site-correlated adsorption and surface diffusion in molecular-beam epitaxy
pp. 168-175(8)
Authors: Nakayama H.; Tochigi M.; Maeda H.; Nishino T.

Molecular dynamics simulation of (100)InGaAs/GaAs strained-layer relaxation processes
pp. 176-179(4)
Authors: Ashu P.A.; Jefferson J.H.; Cullis A.G.; Hagston W.E.; Whitehouse C.R.

Diffusion constant of Ga adatom on GaAs (001) surface: molecular dynamics calculations
pp. 180-184(5)
Authors: Palma A.; Semprini E.; Talamo A.; Tomassini N.

Indium surface segregation in InGaAs-based structures prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy
pp. 185-189(5)
Authors: Bosacchi A.; Colonna F.; Franchi S.; Pascarella P.; Allegri P.; Avanzini V.

Role of step orientation and step-step interaction in the in-situ creation of laterally confined semiconductor nanostructures via growth: a simulated annealing study on a parallel computing platform
pp. 190-196(7)
Authors: Viswanathan R.; Madhukar A.; Ogale S.B.

The characterization of the growth of sub-monolayer coverages (1200th to 1 monolayer) of Si and Be on GaAs(001): A reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study
pp. 197-201(5)
Authors: Woolf D.A.; Rose K.C.; Morris S.J.; Westwood D.I.; Rumberg J.; Reinhardt F.; Richter W.; Williams R.H.

A scanning tunnelling microscopy study of the deposition of Si on GaAs(001); implications for Si -doping
pp. 202-208(7)
Authors: Avery A.R.; Holmes D.M.; Sudijono J.L.; Jones T.S.; Fahy M.R.; Joyce B.A.

Diffusion of Si-acceptor in -doped GaAs grown on GaAs(111)A by molecular beam epitaxy
pp. 209-213(5)
Authors: Hirai M.; Ohnishi H.; Fujita K.; Vaccaro P.; Watanabe T.

Atomic-scale controlled incorporation of ultrahigh-density Si doping sheets in GaAs
pp. 214-220(7)
Authors: Daweritz L.; Kostial H.; Hey R.; Ramsteiner M.; Wagner J.; Maier M.; Behrend J.; Horicke M.

Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane
pp. 221-226(6)
Authors: Tomioka T.; Okamoto N.; Ando H.; Yamaura S.; Fujii T.

Tin as an n-type dopant in the molecular beam epitaxial growth of GaAs(111)A
pp. 227-230(4)
Authors: Hu S.J.; Fahy M.R.; Sato K.; Joyce B.A.

Se-doped AlGaAs grown on GaAs(111)A by molecular beam epitaxy
pp. 231-235(5)
Authors: Ohnishi H.; Hirai M.; Yamamoto T.; Fujita K.; Watanabe T.

Carbon doping into GaAs using combined ion beam and molecular beam epitaxy method
pp. 236-240(5)
Authors: Iida T.; Makita Y.; Kimura S.; Kawasumi Y.; Yamada A.; Uekusa S.-i.; Tsukamoto T.

Carbon background in P-based III-V semiconductors grown by metalorganic molecular beam epitaxy using ethyl-metalorganic sources
pp. 241-245(5)
Authors: Yoshimoto M.; Tanaka S.; Tsuji T.; Kurata H.; Nishimura K.; Matsunami H.

p-Type GaAs doped by diiodomethane (CI₂H₂) in molecular beam epitaxy, metalorganic molecular beam epitaxy, and chemical beam epitaxy
pp. 246-250(5)
Authors: Li N.Y.; Dong H.K.; Tu C.W.; Geva M.

High carbon doping of Ga_1-xIn_xAs (x ~ 0.01) grown by molecular beam epitaxy
pp. 251-255(5)
Authors: Mazuelas A.; Maier M.; Wagner J.; Trampert A.; Fischer A.; Ploog K.H.

The injected carbon impurities in intermixed GaAs/AlAs multiple quantum wells during thermal treatment
pp. 256-260(5)
Authors: Oh Y.T.; Kim S.K.; Byun S.C.; Kang T.W.; Hong C.Y.; Lee J.J.; Lee H.K.; Kim T.W.

Shallow donors and deep levels in GaAs grown by atomic layer molecular beam epitaxy
pp. 261-265(5)
Authors: Bosacchi A.; Gombia E.; Mosca R.; Franchi S.; Carnera A.; Gasparotto A.

Quantum transport measurements on Si - and slab-doped In_0.53Ga_0.47As grown by molecular beam epitaxy
pp. 266-270(5)
Authors: McElhinney M.; Skuras E.; Holmes S.N.; Johnson E.A.; Long A.R.; Stanley C.R.

Negative magnetoresistance in Si atomic-layer-doped GaAs
pp. 271-276(6)
Authors: Goto H.; Shi W.; Suzuki T.; Sawaki N.; Ito H.; Hara K.

New frontiers of molecular beam epitaxy with in-situ processing
pp. 277-284(8)
Author: Hong M.

GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth
pp. 285-292(8)
Authors: Wegscheider W.; Pfeiffer L.N.; Pinczuk A.; West K.W.; Dignam M.M.; Hull R.; Leibenguth R.E.

Strained AlGaInP quantum wire lasers
pp. 293-298(6)
Authors: Pearah P.J.; Chen A.C.; Moy A.M.; Hsieh K.C.; Cheng K.Y.

In_xGa_1-xAs/GaAs quantum wire structures grown on GaAs (100) patterned substrates with [001] ridges
pp. 299-305(7)
Authors: Liu Y.; Yamamoto N.; Nishimoto Y.; Kamikubo N.; Shimomura S.; Gamo K.; Murase K.; Sano N.; Adachi A.; Fujita K.; Watanabe T.; Hiyamizu S.

Direct molecular beam epitaxial growth of low-dimensional structures on reactive ion etched surfaces
pp. 306-310(5)
Authors: Rohr T.; Kratzer H.; Bohm G.; Klein W.; Trankle G.; Weimann G.

In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs(001) substrates
pp. 311-316(6)
Authors: Konkar A.; Rajkumar K.C.; Xie Q.; Chen P.; Madhukar A.; Lin H.T.; Rich D.H.

Self-formation of 100 nm scale wire structures during molecular beam epitaxial growth of AlGaAs on patterned substrates
pp. 317-321(5)
Authors: Kadoya Y.; Yoshida T.; Nagamune Y.; Noge H.; Sakaki H.

Control of ridge shape for the formation of nanometer-scale GaAs ridge quantum wires by molecular beam epitaxy
pp. 322-326(5)
Authors: Koshiba S.; Noda T.; Noge H.; Nakamura Y.; Ichinose H.; Shitara T.; Vvedensky D.D.; Sakaki H.

Fabrication of InGaAs ridge quantum wires by selective molecular beam epitaxy and their characterization
pp. 327-331(5)
Authors: Fujikura H.; Hasegawa H.

Fabrication of GaAs quantum wires by metalorganic molecular beam epitaxy and their optical properties
pp. 332-335(4)
Authors: Nomura Y.; Goto S.; Morishita Y.; Matsuyama I.; Katayama Y.

Organized growth of GaAs/AlAs lateral structures on atomic step arrays: what is possible to do?
pp. 336-340(5)
Authors: Etienne B.; Laruelle F.; Bloch J.; Sfaxi L.; Lelarge F.

InGaAs/InAlAs in-plane superlattices grown on slightly misoriented (110) InP substrates by molecular beam epitaxy
pp. 341-345(5)
Authors: Nakata Y.; Ueda O.; Tackeuchi A.; Nakamura S.; Muto S.

Transmission electron microscopic evaluation of InGaAs/InAlAs in-plane superlattices grown on slightly misoriented (110) InP substrates by molecular beam epitaxy
pp. 346-350(5)
Authors: Ueda O.; Nakata Y.; Takeuchi A.; Nakamura S.; Muto S.

Optical investigation of the self-organized growth of InAs/GaAs quantum boxes
pp. 351-356(6)
Authors: Gerard J.M.; Genin J.B.; Lefebvre J.; Moison J.M.; Lebouche N.; Barthe F.

Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fields
pp. 357-363(7)
Authors: Xie Q.; Chen P.; Kalburge A.; Ramachandran T.R.; Nayfonov A.; Konkar A.; Madhukar A.

Optimized InAs quantum effect device structures grown by molecular beam epitaxy
pp. 364-369(6)
Authors: Yoh K.; Takeuchi H.; Nishida A.; Inoue M.

Selective growth and other applications of hydrogen-assisted molecular beam epitaxy
pp. 370-376(7)
Author: Kawabe M.

Selective area growth of GaAs using a Ga beam with a step-function lateral intensity profile
pp. 377-382(6)
Authors: Tomita N.; Yoshida N.; Shimomura S.; Murase K.; Adachi A.; Hiyamizu S.

Electrical properties of lateral npn junctions using molecular beam epitaxy grown Si-doped GaAs on patterned substrates
pp. 383-387(5)
Authors: Takamori T.; Kamijoh T.

Transmission electron microscopy observation of GaAs/Al_0.3Ga_0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs(100) reverse-mesa etched substrates
pp. 388-393(6)
Authors: Tanaka M.; Tomita N.; Higuchi T.; Shimomura S.; Adachi A.; Sano N.; Hiyamizu S.

Dependence of InP and GaAs chemical beam epitaxy growth rate on substrate orientations; applications to selective area epitaxy
pp. 394-398(5)
Authors: Legay P.; Alexandre F.; Benchimol J.L.; Harmand J.C.

Symmetric InP mirror facets fabricated by selective chemical beam epitaxy on reactive-ion-etched sidewalls
pp. 399-403(5)
Authors: Gotoda M.; Sugimoto H.; Maruno S.; Isu T.; Susaki W.; Nunoshita M.

Stability of GaAs oxide under metalorganic molecular beam epitaxy process
pp. 404-408(5)
Authors: Hiratani Y.; Sasaki M.; Yoshida S.; Yamada M.

Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs (411)A substrates by molecular beam epitaxy
pp. 409-414(6)
Authors: Shimomura S.; Kaneko S.; Motokawa T.; Shinohara K.; Adachi A.; Okamoto Y.; Sano N.; Murase K.; Hiyamizu S.

Characterization of GaAs/AlAs interfacial atomic step structures on a (411)A-oriented substrate by transmission electron microscope
pp. 415-420(6)
Authors: Tsuda Y.; Shimomura S.; Hiyamizu S.; Sano N.

Evaluation of the highly coherent surface structure of the GaAs (411)A plane using scanning tunneling microscopy
pp. 421-424(4)
Authors: Yamada T.; Yamaguchi H.; Horikoshi Y.

Scanning tunneling microscopy of the GaAs (311)A surface reconstruction
pp. 425-430(6)
Authors: Wassermeier M.; Sudijono J.; Johnson M.D.; Leung K.T.; Orr B.G.; Daweritz L.; Ploog K.

Optical anisotropy of (11N) and vicinal (001) quantum wells
pp. 431-435(5)
Authors: Kajikawa Y.; Brandt O.; Kanamoto K.; Tsukada N.

Strong enhancement of the optical and electrical properties, and spontaneous formation of an ordered superlattice in (111)B AlGaAs
pp. 436-440(5)
Authors: Chin A.; Lin H.Y.; Hsieh K.Y.

Structural analysis of AlGaAs quantum wires on vicinal (110)GaAs by transmission electron microscopy and energy dispersive X-ray spectroscopy
pp. 441-445(5)
Authors: Takeuchi M.; Shiba K.; Huang H.K.; Sato K.; Inoue K.; Maehashi K.; Nakashima H.

Molecular beam epitaxy growth and properties of GaAs/(AlGa)As p-type heterostructures on (100), (011), (111)B, (211)B, (311)B, and (311)A oriented GaAs
pp. 446-450(5)
Authors: Henini M.; Crump P.A.; Rodgers P.J.; Gallagher B.L.; Vickers A.J.; Hill G.

The growth and physics of ultra-high-mobility two-dimensional hole gas on (311) A GaAs surface
pp. 451-454(4)
Authors: Henini M.; Rodgers P.J.; Crump P.A.; Gallagher B.L.; Hill G.

Silicon compensation and scattering mechanisms in two-dimensional electron gases on (110)GaAs
pp. 455-459(5)
Authors: Holland M.C.; Kean A.H.; Stanley C.R.

Surfactant-mediated molecular-beam epitaxy of III-V strained-layer heterostructures
pp. 460-466(7)
Authors: Tournie E.; Grandjean N.; Trampert A.; Massies J.; Ploog K.H.

Growth of InGaAs/GaAs heterostructures with abrupt interfaces on the monolayer scale
pp. 467-472(6)
Authors: Gerard J.-M.; d'Anterroches C.

Effects of alloy composition on the As desorption from and adsorption on strained In_xGa_1-xAs surfaces
pp. 473-477(5)
Authors: Ekenstedt M.J.; Yamaguchi H.; Horikoshi Y.

Magnitude and polarity of strain-induced fields in pseudomorphic In_0.2Ga_0.8As quantum well structures on (112) GaAs substrates
pp. 478-481(4)
Authors: Sun D.; Henderson R.H.; Towe E.

Aspects of low heterostructure symmetry in (311)A (In,Ga)As/GaAs
pp. 482-486(5)
Authors: Ilg M.; Alonso M.I.; Mazuelas A.; Tournie E.; Ploog K.H.

Preferential migration of indium atoms on the (411)A plane in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy
pp. 487-491(5)
Authors: Kitada T.; Wakejima A.; Tomita N.; Shimomura S.; Adachi A.; Sano N.; Hiyamizu S.

Non-linear As(P) incorporation in GaAs_1-yP_y on GaAs and InAs_1-yP_y on InP
pp. 492-496(5)
Authors: Cunningham J.E.; Williams M.D.; Pathak R.N.; Jan W.

Effect of atomic hydrogen in highly lattice-mismatched molecular beam epitaxy
pp. 497-502(6)
Authors: Chun Y.J.; Okada Y.; Kawabe M.

Strain relaxation in InGaAs/GaAs quantum wells grown on GaAs (111)A substrates
pp. 503-507(5)
Authors: Vaccaro P.O.; Takahashi M.; Fujita K.; Watanabe T.

Precise thickness measurement within a few monolayers by X-ray diffraction from InGaAs/GaAs strained-layer superlattices
pp. 508-512(5)
Authors: Sato M.; Kawaguchi T.; Nishi S.

Phonon behavior and interfacial stress in the strained (InAs)_m/(GaAs)_n ultrathin superlattices
pp. 513-517(5)
Authors: Emura S.; Matsui Y.; Gonda S.-i.

Molecular beam epitaxial growth and thermodynamic analysis of InGaAs and InAlAs lattice matched to InP
pp. 518-522(5)
Authors: McElhinney M.; Stanley C.R.

Generation mechanism of CuAu-I type ordered structures in InGaAs crystals grown on (110) InP substrates by molecular beam epitaxy
pp. 523-527(5)
Authors: Ueda O.; Nakata Y.; Muto S.

Effect of As_i on the optical properties of Ga_1-xIn_xAs/InP grown by molecular beam epitaxy
pp. 528-532(5)
Authors: Popp M.; Schiefele M.; Hurich M.; Wachter M.; Schneider J.M.; Marheineke B.; Heinecke H.

Effects of substrate misorientation on triple-period ordering in AlInAs
pp. 533-538(6)
Authors: Gomyo A.; Makita K.; Hino I.; Suzuki T.

Chemical beam epitaxial growth of high optical quality AlGaAs - the influence of precursor purity on material properties
pp. 539-545(7)
Authors: Freer R.W.; Martin T.; Lane P.A.; Whitehouse C.R.; Whitaker T.J.; Houlton M.; Calcott P.D.J.; Lee D.; Jones A.C.; Rushworth S.A.

Effects of cation diffusion during chemical beam etching
pp. 546-550(5)
Authors: Chiu T.H.; Tsang W.T.; Williams M.D.; Mendonca C.A.C.; Dreyer K.; Storz F.G.

Low temperature etching of GaAs substrates and improved morphology of GaAs grown by metalorganic molecular beam epitaxy using trisdimethylaminoarsenic and triethylgallium
pp. 551-556(6)
Authors: Marx D.; Asahi H.; Liu X.F.; Higashiwaki M.; Villaflor A.B.; Miki K.; Yamamoto K.; Gonda S.; Shimomura S.; Hiyamizu S.

Reduction of carbon incorporation in the in-situ selective-area epitaxy of GaAs by metalorganic molecular beam epitaxy using tris-dimethylaminoarsine
pp. 557-561(5)
Authors: Yoshida S.; Sasaki M.

Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources
pp. 562-567(6)
Authors: Li N.Y.; Hsin Y.M.; Dong H.K.; Nakamura T.; Asbeck P.M.; Tu C.W.

Selective-area epitaxial growth of GaAs by gas-source molecular-beam epitaxy using metal gallium and trisdimethylaminoarsine
pp. 568-573(6)
Authors: Goto S.; Jelen C.; Nomura Y.; Morishita Y.; Katayama Y.

Gas source molecular beam epitaxial growth of GaP/AlP modulated superlattices and their optical properties
pp. 574-578(5)
Authors: Kim J.H.; Asahi H.; Asami K.; Iwata K.; Kim S.G.; Ogura T.; Gonda S.

Gas source molecular beam epitaxy grown InGaAsP/InGaAlAs multi-quantum well structures with wide range continuum band-offset control
pp. 579-584(6)
Authors: Makita K.; Gomyo A.; Hino I.

Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 10²¹ cm^-3 grown by metalorganic molecular beam epitaxy and its application to InGaP/GaAs heterojunction bipolar transistors
pp. 585-590(6)
Authors: Shirakashi J.-i.; Azuma T.; Fukuchi F.; Konagai M.; Takahashi K.

Effect of source-supply interruptions on the interface abruptness in gas source molecular beam epitaxy grown InGaAs/InP heterostructures
pp. 591-596(6)
Authors: Mozume T.; Kashima H.; Hosomi K.; Ouchi K.; Sato H.; Masuda H.; Tanoue T.

InGaAsP/InAlAs type I/type II multiple quantum well structures grown by gas source molecular beam epitaxy
pp. 597-601(5)
Authors: Kawamura Y.; Iwamura H.

A new method of flux calibration for gas source molecular beam epitaxy of InP and its application to migration enhanced epitaxy
pp. 602-606(5)
Authors: Ozeki T.; Yang B.X.; Hasegawa H.

Gas-source molecular beam epitaxy of lattice-matched Ga_xIn_1-xAs_yP_1-y on GaAs over the entire composition range
pp. 607-611(5)
Authors: Zhang G.; Pessa M.; Hjelt K.; Collan H.; Tuomi T.

Inducement of GaAs growth by electron beam irradiation on GaAs covered by native oxide
pp. 612-615(4)
Authors: Watanabe K.; Hosoya M.; Hara K.; Yoshino J.; Munekata H.; Kukimoto H.

Study on dimer density evolution during GaAs short-pulse supersonic nozzle beam epitaxy on (2 x 4) initial surface by millisecond time-resolved reflectance difference
pp. 616-621(6)
Authors: Cui J.; Zhang S.; Tanaka A.; Aoyagi Y.

Fast reconstruction transitions and fast surface reactions in short-pulse supersonic nozzle beam epitaxy
pp. 622-626(5)
Authors: Zhang S.; Cui J.; Tanaka A.; Aoyagi Y.

Chemical beam epitaxial growth of InGaAs on GaAs(100) using triethylgallium, trimethylindium and unprecracked monoethylarsine
pp. 627-632(6)
Authors: Ro J.-R.; Park S.-J.; Kim S.-B.; Lee E.-H.

Growth of Ga_xIn_1-xAs/InP thin layer structures by chemical beam epitaxy
pp. 633-637(5)
Authors: Leys M.R.; Rongen R.T.H.; Hopkins J.; Vonk H.; van Es C.M.; Wolter J.H.; Tichelaar F.D.

The etching effect of trisdimethylaminoantimony on (001) planar substrates
pp. 638-643(6)
Authors: Villaflor A.B.; Asahi H.; Marx D.; Miki K.; Yamamoto K.; Gonda S.

The use of diethylsulphide for the doping of GaAs, AlGaAs and InGaAs grown by chemical beam epitaxy
pp. 644-648(5)
Authors: Joyce T.B.; Pfeffer T.L.; Bullough T.J.; Petkos G.; Goodhew P.J.; Jones A.C.

Effect of the AlAs surface reconstruction on properties of Ge grown on AlAs
pp. 649-653(5)
Authors: Maeda T.; Tanaka H.; Takikawa M.; Kasai K.

Rearrangement of misfit dislocations in GaAs on Si by post-growth annealing
pp. 654-660(7)
Authors: Tamura M.; Yodo T.; Saitoh T.; Palmer J.

Effect of atomic hydrogen irradiation in low-temperature GaAs/Si heteroepitaxy
pp. 661-664(4)
Authors: Ohta S.; Okada Y.; Kawabe M.

Initial growth of GaAs on vicinal Si(110) substrates
pp. 665-670(6)
Authors: Yodo T.; Tamura M.; Saitoh T.

Selective growth of micro GaAs dots on Si by molecular beam epitaxy
pp. 671-676(6)
Authors: Maeda H.; Watatani S.; Nakayama H.; Nishino T.

Suppression of threading dislocation generation in GaAs-on-Si with strained short-period superlattices
pp. 677-680(4)
Authors: Takagi Y.; Yonezu H.; Kawai T.; Hayashida K.; Samonji K.; Ohshima N.; Pak K.

Reduction of dislocation density by thermal annealing for GaAs/GaSb/Si heterostructure
pp. 681-684(4)
Authors: Uchida H.; Soga T.; Nishikawa H.; Jimbo T.; Umeno M.

GaAs on Si(111) with a layered structure GaSe buffer layer
pp. 685-690(6)
Authors: Palmer J.E.; Saitoh T.; Yodo T.; Tamura M.

Migration-enhanced pulsed chemical beam epitaxy of GaP on Si(001)
pp. 691-695(5)
Authors: Dietz N.; Miller A.; Kelliher J.T.; Venables D.; Bachmann K.J.

Growth and characterization of GaAs/Si/GaAs heterostructures
pp. 696-699(4)
Authors: Thordson J.V.; Songpongs P.; Swenson G.; Andersson T.G.

ZnMgSSe based laser diodes
pp. 701-706(6)
Authors: Itoh S.; Ishibashi A.

Growth of ZnS and ZnSSe by gas-source molecular beam epitaxy using hydride group VI sources
pp. 707-711(5)
Authors: Imaizumi M.; Endoh Y.; Suita M.; Ohtsuka K.-i.; Isu T.; Nunoshita M.

Recombination mechanisms in photopumped Zn_1-xCd_xSe/ZnSe multiple quantum well lasers
pp. 712-717(6)
Authors: Calcagnile L.; Di Dio; Lomascolo M.; Rinaldi R.; Prete P.; Cingolani R.; Vanzetti L.; Bonanni A.; Bassani; Sorba; Franciosi

Blue and green light-emitting diode structures grown by molecular beam epitaxy on ZnSe substrates
pp. 718-724(7)
Authors: Eason D.; Ren J.; Yu Z.; Hughes C.; Cook J.W.; Schetzina J.F.; El-Masry N.A.; Cantwell G.; Harsh W.C.

Growth and characterization of wide bandgap Zn_1-xHg_xSe
pp. 725-728(4)
Authors: Hara K.; Machimura H.; Usui M.; Munekata H.; Kukimoto H.; Yoshino J.

p-Type and n-type doping of ZnSe: Effects of hydrogen incorporation
pp. 729-733(5)
Authors: Fisher P.A.; Ho E.; House J.L.; Petrich G.S.; Kolodziejski L.A.; Walker J.; Johnson N.M.

Metalorganic molecular beam epitaxy growth of ZnSe with new Zn and Se precursors without precracking
pp. 734-737(4)
Authors: Sato G.; Numai T.; Hoshiyama M.; Suemune I.; Machida H.; Shimoyama N.

Growth of ZnSe/ZnMgSSe quantum well structures by metalorganic molecular beam epitaxy under in situ observation of reflection high energy electron diffraction intensity oscillation
pp. 738-742(5)
Authors: Suda J.; Kawakami Y.; Fujita S.; Fujita S.

Structural and electrical properties of ZnSe laser diodes optimized by transmission electron microscopy, reflection high energy electron diffraction, X-ray diffraction and C-V profiling
pp. 743-748(6)
Authors: Behr T.; Hommel D.; Cerva H.; Nurnberger J.; Beyersdorfer V.; Landwehr G.

Dependence of the structural properties of ZnSe on GaAs substrate orientation
pp. 749-754(6)
Authors: Parbrook P.J.; Ishikawa M.; Nishikawa Y.; Saito S.; Onomura M.; Hatakoshi G.

Optimum growth conditions of molecular beam epitaxial growth of ZnSe at a low temperature
pp. 755-759(5)
Authors: Matsumura N.; Maemura K.; Takanaka N.; Ichikawa S.; Saraie J.

Molecular beam epitaxial growth and characterization of ZnSTe epilayers and ZnSTe/ZnSe superlattices on Si substrates
pp. 760-764(5)
Authors: Chan Y.W.; Wang H.; Sou I.K.; Wong K.S.; Wong G.K.L.

Influence of growth parameters on the properties of ZnSe-GaAs(001) heterostructures
pp. 765-769(5)
Authors: Vanzetti L.; Bonanni A.; Bratina G.; Sorba L.; Franciosi A.; Lomascolo M.; Greco D.; Cingolani R.

Green emission enhanced by Te isoelectronic traps in ZnSe grown by molecular beam epitaxy
pp. 770-774(5)
Authors: Takojima N.; Ishizuka Y.; Tsubono I.; Kimura N.; Suzuki K.; Sawada T.; Imai K.

Structural investigation of II-VI compound semiconductor quantum wires using triple-axis X-ray diffractometry
pp. 775-778(4)
Authors: Darhuber A.A.; Straub H.; Ferreira S.; Faschinger W.; Koppensteiner E.; Brunthaler G.; Bauer G.

Molecular beam epitaxy grown CdTe/-Sn/CdTe single quantum well structures
pp. 779-784(6)
Authors: Villaflor A.B.; Shimomura K.; Kawamura K.; Belogorokhov A.I.; Kimata M.

Crystallinity improvement of HgCdTe on GaAs grown by molecular beam epitaxy
pp. 785-789(5)
Authors: Sasaki T.; Tomono M.; Oda N.

The development of low voltage room temperature continuous wave laser diodes
pp. 790-796(7)
Authors: Gunshor R.L.; Han J.; Nurmikko A.V.; Salokatve A.

Lowering of band-gap energy in heavily nitrogen-doped ZnSe
pp. 797-802(6)
Authors: Zhu Z.; Takebayashi K.; Yao T.; Okada Y.

Growth and characterization of N-doped ZnS_xSe_1-x (0 &unknown; x < 0.3) by molecular beam epitaxy
pp. 803-806(4)
Authors: Teraguchi N.; Hirata S.; Mouri H.; Tomomura Y.; Suzuki A.; Takiguchi H.

Thermal stability of nitrogen-doped ZnSe grown by molecular beam epitaxy
pp. 807-811(5)
Authors: Nishikawa Y.; Ishikawa M.; J. Parbrook P.; Onomura M.; Saito S.; Hatakoshi G.-i.

Characterization of N-doped MgZnSSe compound system grown on intentionally misoriented GaAs substrates by molecular beam epitaxy
pp. 812-816(5)
Authors: Ichimura Y.; Kishino K.; Satake M.; Kuramoto M.; Yoshida A.

Li-acceptor doping in ZnS/GaAs by post-heated molecular beam epitaxy
pp. 817-822(6)
Authors: Yoneta M.; Saito H.; Ohishi M.; Kitani K.; Kobashi H.; Hatano C.

Reflection high-energy electron diffraction study of the heterointerface formation of ZnSe/ZnTe
pp. 823-827(5)
Authors: Yao T.; Fujimoto M.; Uesugi K.; Kamiyama S.; Zhu Z.

Reduction of p-ZnSe/p-GaAs non-ohmic barrier by inserting a GaN buffer layer
pp. 828-832(5)
Authors: Hishida Y.; Yoshie T.; Yagi K.; Yamaguchi T.; Niina T.

Gas source molecular beam epitaxy growth of InAlP band offset reduction layers on p-type ZnSe
pp. 833-837(5)
Authors: Iwata K.; Asahi H.; Kim J.H.; Liu X.F.; Gonda S.; Kawaguchi Y.; Ohki A.; Matsuoka T.

Accurate control of As and Sb incorporation ratio during solid-source molecular-beam epitaxy
pp. 838-843(6)
Author: Zhang Y.-H.

Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy
pp. 844-848(5)
Authors: Bosacchi A.; Franchi S.; Allegri P.; Avanzini V.; Baraldi A.; Ghezzi C.; Magnanini R.; Parisini A.; Tarricone L.

(111) InAs/GaInSb strained-layer superlattice growth investigation
pp. 849-852(4)
Authors: Reich D.A.; Wowchak A.M.; Chow P.P.; Van Hove J.M.

The n-type and p-type doping of GaSb and AlGaSb grown by metalorganic molecular beam epitaxy
pp. 853-857(5)
Authors: Yamamoto K.; Asahi; Inoue K.; Miki K.; Liu X.F.; Marx D.; Villaflor; Asami K.; Gonda S.

Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy
pp. 858-862(5)
Authors: Schmitz J.; Wagner J.; Fuchs F.; Herres N.; Koidl P.; Ralston J.D.

Formation of InSb nanocrystals on Se-terminated GaAs(001)
pp. 863-867(5)
Authors: Watanabe Y.; Maeda F.; Oshima M.

A Raman scattering study on the interface sharpness of InAs/AlSb/GaSb/AlSb polytype superlattices grown by molecular beam epitaxy
pp. 868-873(6)
Authors: Yano M.; Utatsu T.; Iwai Y.; Inoue M.

Metalorganic molecular beam epitaxy of GaSb on patterned GaSb substrates using triethylgallium and Sb₄
pp. 874-878(5)
Authors: Marx D.; Miyamoto K.; Asahi H.; Liu X.F.; Villaflor A.B.; Miki K.; Gonda S.; Shimomura S.; Hiyamizu S.

Structural and transport properties of InAs/AlSb superlattices
pp. 879-882(4)
Authors: Chow D.H.; Zhang Y.H.; Miles R.H.; Dunlap H.L.

Hole accumulation in (In)GaSb/AlSb quantum wells induced by the Fermi-level pinning of an InAs surface
pp. 883-886(4)
Authors: Makimoto T.; Brar B.; Kroemer H.

GaN based III-V nitrides by molecular beam epitaxy
pp. 887-891(5)
Authors: Morkoc H.; Botchkarev A.; Salvador A.; Sverdlov B.

The growth and properties of group III nitrides
pp. 892-896(5)
Authors: Foxon C.T.; Cheng T.S.; Novikov S.V.; Lacklison D.E.; Jenkins L.C.; Johnston D.; Orton J.W.; Hooper S.E.; Baba-Ali N.; Tansley T.L.; Tret'yakov V.V.

Effects of V/III supply ratio on improvement of crystal quality of zincblende GaN grown by gas source molecular beam epitaxy using RF-radical nitrogen source
pp. 897-901(5)
Authors: Kikuchi A.; Hoshi H.; Kishino K.

Analysis and optimization of the electron cyclotron resonance plasma for nitride epitaxy
pp. 902-907(6)
Authors: Ohtani A.; Stevens K.S.; Kinniburgh M.; Beresford R.

GaN growth by a controllable RF-excited nitrogen source
pp. 908-911(4)
Authors: Van Hove J.M.; Cosimini G.J.; Nelson E.; Wowchak A.M.; Chow P.P.

Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide
pp. 912-915(4)
Authors: Oberman D.B.; Lee H.; Gotz W.K.; Harris J.S.

In situ monitoring of reflection high-energy electron diffraction oscillation during the growth of gallium nitride films by gas-source molecular beam epitaxy
pp. 916-920(5)
Authors: Moriyasu Y.; Goto H.; Kuze N.; Matsui M.

Prospects of SiGe heterodevices
pp. 921-925(5)
Author: Kasper E.

Elongated dimer structure for Ge overlayers on Si(001): symmetric or asymmetric?
pp. 926-930(5)
Authors: Oyanagi H.; Sakamoto K.; Shioda R.; Sakamoto T.

Local structure of strain-compensated epitaxial Si_1-x-yGe_xC_y layers on Si(001) grown with molecular beam epitaxy
pp. 931-933(3)
Authors: Osten H.J.; Dietrich B.; Rucker H.; Methfessel M.

Low-temperature heteroepitaxial growth of cubic SiC on Si using hydrocarbon radicals by gas source molecular beam epitaxy
pp. 934-938(5)
Authors: Hatayama T.; Tarui Y.; Fuyuki T.; Matsunami H.

Suppression of Ge surface segregation during Si molecular beam epitaxy by atomic and molecular hydrogen irradiation
pp. 939-943(5)
Authors: Nakagawa K.; Nishida A.; Kimura Y.; Shimada T.

Surfactant effect of H atoms on the suppression of Ge segregation in Si overgrowth on Ge(n ML)/Si(100) substrates by gas source molecular beam epitaxy
pp. 944-949(6)
Authors: Zaima S.; Sato K.; Kitani T.; Matsuyama T.; Ikeda H.; Yasuda Y.

Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy
pp. 950-954(5)
Authors: Zhang J.; Zhang X.M.; Matsumura A.; Marinopoulou A.; Hartung J.; Anwar N.; Parry G.; Xie M.H.; Mokler S.M.; Fernandez J.M.; Joyce B.A.

Atom-rearrangement in Ge layer grown on Si substrate during anneal observed in real time by coaxial impact collision ion scattering spectroscopy
pp. 955-959(5)
Authors: Saitoh T.; Tamura M.; Palmer J.E.; Yodo T.

A scanning tunneling microscopy study of epitaxial Ge growth
pp. 960-963(4)
Authors: Tsui F.; Barlett D.; Wellman J.; Uher C.; Clarke R.

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO₂ mask
pp. 964-968(5)
Authors: Zhang X.-j.; Lu H.-q.; Gong D.-w.; Lu X.-k.; Chen X.-j.; Hu J.-h.; Huang W.-n.; Fan Y.-l.; Wang X.

Selective epitaxial growth of Ge and SiGe using Si₂H₆ gas and Ge solid source molecular beam epitaxy
pp. 969-973(5)
Authors: Wado H.; Shimizu T.; Ogura S.; Ishida M.; Nakamura T.

Phase transformation of crystallinity of Si_1-xGe_x layers grown on Si(001) by low temperature molecular beam epitaxy
pp. 974-979(6)
Authors: Lee S.-C.; Lee J.Y.; Yun S.J.

Simultaneous Si molecular beam epitaxy and high-dose ion implantation
pp. 980-983(4)
Authors: Ishikawa Y.; Shibata N.

Low temperature silicon epitaxy using supersonic molecular beams
pp. 984-988(5)
Authors: Malik; Gulari E.; Li S.H.; Bhattacharya P.K.; Singh J.

Temperature dependence of boron surface segregation in Si molecular beam epitaxial growth on the Si(111) &Eth;3 x &Eth;3-B surface
pp. 989-993(5)
Authors: Kumagai Y.; Ishimoto K.; Mori R.; Hasegawa F.

Kinetics of arsenic doping in silicon by ultra-high-vacuum chemical vapor deposition
pp. 994-998(5)
Authors: Sugiyama N.; Imai S.; Kawaguchi Y.

The effect of in situ boron doping on the strain relaxation of Si_0.8Ge_0.2 : B/Si heterostructure grown by molecular beam epitaxy
pp. 999-1004(6)
Authors: Lee S.-C.; Sun Jin Yun; Jeong Yong Lee

Epitaxial growth of Si₁-x-yGe_xC_y by ultrahigh vacuum chemical vapor deposition using disilane, germane and acetylene
pp. 1005-1010(6)
Authors: Hiroi M.; Tatsumi T.

Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates
pp. 1011-1014(4)
Authors: Nutzel J.F.; Engelhardt C.M.; Wiesner R.; Tobben D.; Holzmann M.; Abstreiter G.

Reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si and SiGe on Si(001)
pp. 1015-1019(5)
Authors: Zhang J.; Taylor A.G.; Fernandez J.M.; Joyce B.A.; Turner A.R.; Pemble M.E.

Characterization of termination layer of SiGe system through signatures of Si&unknown;O and Ge&unknown;O species
pp. 1020-1024(5)
Authors: Prabhakaran K.; Ogino T.

Luminescence of strained Si_1-xGe_x/Si quantum wells and microstructures
pp. 1025-1032(8)
Authors: Fukatsu S.; Shiraki Y.

Crucial role of Si buffer layer quality in the photoluminescence efficiency of strained Si_1-xGe_x/Si quantum wells
pp. 1033-1037(5)
Authors: Mine T.; Usami N.; Shiraki Y.; Fukatsu S.

Photoluminescence investigation on growth mode changeover in Ge-rich Si_1-xGe_x/Si strained quantum wells
pp. 1038-1044(7)
Authors: Sunamura H.; Fukatsu S.; Shiraki Y.

Band-gap luminescence in strain-symmetrized Si_m/Ge_n superlattices grown by molecular beam epitaxy using gaseous Si₂H₆ and solid Ge
pp. 1045-1049(5)
Authors: Zhu X.; Xiang Q.; Chu M.; Wang K.L.

SiGe quantum wells on (110) Si grown by molecular beam epitaxy
pp. 1050-1054(5)
Authors: Brunner J.; Gail M.; Abstreiter G.; Vogl P.

Cavity mode luminescence of strained Si_1-xGe_x/Si quantum wells grown on a buried-oxide substrate
pp. 1055-1059(5)
Authors: Fukatsu S.; Nayak D.K.; Shiraki Y.

SiGe wires and dots grown by local epitaxy
pp. 1060-1064(5)
Authors: Brunner J.; Schittenhelm P.; Gondermann J.; Spangenberg B.; Hadam B.; Koster T.; Roskos H.G.; Kurz H.; Gossner H.; Eisele I.; Abstreiter G.

Strain-induced lateral band gap modulation in Si_1-xGe_x/Si quantum well and quantum wire structures
pp. 1065-1069(5)
Authors: Usami N.; Sunamura H.; Mine T.; Fukatsu S.; Shiraki Y.

Cathodoluminescence investigation of SiGe quantum wires fabricated on V-groove patterned Si substrates
pp. 1070-1073(4)
Authors: Higgs V.; Lightowlers E.C.; Usami N.; Shiraki Y.; Mine T.; Fukatsu S.

Effect of adjacent insulating oxide layers on superconductivity of one unit cell thick YBa₂Cu₃O_7- layers in PrBa₂Cu₃O_7-/YBa₂Cu₃O_7-/insulating oxide trilayers
pp. 1074-1079(6)
Authors: Bando Y.; Terashima T.; Shimura K.-i.; Daitoh Y.; Yano Y.

Low-temperature nucleation and the heteroepitaxial growth of ultra-thin films of Sr and Ba oxides
pp. 1080-1085(6)
Authors: Pindoria G.; Kawaguchi K.; Nishiyama M.; Morishita T.

Preparation of BaBiO₃ thin films using an oxygen radical beam source
pp. 1086-1089(4)
Authors: Iyori M.; Suzuki S.; Yamano K.; Suzuki H.; Takahashi K.; Yoshisato Y.

Ferroelectric phase transition in BaTiO₃ films
pp. 1090-1093(4)
Authors: Yoneda Y.; Kasatani H.; Terauchi H.; Yano Y.; Terashima T.; Bando Y.

Bi₂Sr₂Ca_n-1Cu_nO_y thin films by growth interruption technique
pp. 1094-1097(4)
Authors: Ishibashi T.; Soutome H.; Okada Y.; Kawabe M.

Ordering of sulfur interlayer in molecular beam epitaxy-grown SrF₂/S/GaAs(111) A and B
pp. 1098-1103(6)
Authors: Sugiyama M.; Maeyama S.; Watanabe Y.; Heun S.; Oshima M.

Characterization of ferroelectric BaMgF₄ films grown on AlGaAs/GaAs(100) high-electron-mobility transistor structures
pp. 1104-1107(4)
Authors: Ohmi S.-i.; Tokumitsu E.; Ishiwara H.

Morphology of thin SrF₂ films on InP(111) studied by reflection high-energy electron diffraction
pp. 1108-1114(7)
Authors: Heun S.; Sugiyama M.; Maeyama S.; Watanabe Y.; Oshima M.

High-quality CdF₂ layer growth on CaF₂/Si(111)
pp. 1115-1118(4)
Authors: Izumi A.; Tsutsui K.; Sokolov N.S.; Faleev N.N.; Gastev S.V.; Novikov S.V.; Yakovlev N.L.

Growth by molecular beam epitaxy and structural study of lattice matched Mg_xCa_1-xF₂ films on silicon
pp. 1119-1121(3)
Authors: Yakovlev N.L.; Shusterman Y.V.

X-ray absorption fine structure studies of sulfur interlayers in molecular beam epitaxy grown SrF₂/S/GaAs(111)
pp. 1122-1125(4)
Authors: Maeyama S.; Sugiyama M.; Heun S.; Oshima M.

Magnetic superlattices: molecular beam epitaxial growth and properties of artificially and naturally-layered structures
pp. 1126-1131(6)
Authors: Farrow R.F.C.; Marks R.F.; Cebollada A.; Harp G.R.; Rabedeau T.A.; Toney M.F.; Weller D.; Parkin S.S.P.

Heteroepitaxy of ferromagnetic MnAs thin films on (001) GaAs: Template effects and epitaxial orientations
pp. 1132-1138(7)
Authors: Tanaka M.; Harbison J.P.; Rothberg G.M.

Epitaxial ferromagnetic ( MnAlCo) and (CoCoAl) multilayers on GaAs (001) grown by molecular beam epitaxy
pp. 1139-1143(5)
Authors: De Boeck J.; Bruynseraede C.; Bender H.; Van Esch A.; Van Roy W.; Borghs G.

Fabrication and magneto-optical properties of epitaxial ferromagnetic Mn₁ - xSb thin films grown on GaAs and sapphire
pp. 1144-1149(6)
Authors: Akinaga H.; Tanaka K.; ando K.; Katayama T.

Epitaxial growth of thick pseudomorphic NiAl metal films on GaAs by migration enhanced epitaxy
pp. 1150-1153(4)
Authors: Weckwerth M.V.; Hung C.Y.; Pao Y.C.; Harris J.S.

Elastic anomalies in single crystal copper/nickel superlattices grown by molecular beam epitaxy
pp. 1154-1158(5)
Authors: Sakaue; Sano N.; Terauchi H.; Yoshihara A.

Al growth on Si(001) observed by scanning tunneling microscopy
pp. 1159-1163(5)
Authors: Shimizu N.; Kitada H.; Ueda O.

Initial stages of Ag growth on Sb-terminated GaAs(001)
pp. 1164-1168(5)
Authors: Maeda F.; Watanabe Y.; Oshima M.

Gold growth on Si(111) &Eth;3 x &Eth;3 Ag and &Eth;3 x &Eth;3 Au surfaces
pp. 1169-1174(6)
Authors: Ichimiya A.; Nomura H.; Ito Y.; Iwashige H.

Molecular beam epitaxial growth and characterization of epitaxial GaSe films on (001)GaAs
pp. 1175-1179(5)
Authors: Kojima N.; Sato K.; Budiman M.; Yamada A.; Konagai M.; Takahashi K.; Nakamura Y.; Nittono O.

Van der Waals epitaxy on hydrogen-terminated Si(111) surfaces and investigation of its growth mechanism by atomic force microscope
pp. 1180-1185(6)
Authors: Ueno K.; Sakurai M.; Koma A.

Thermal mismatch strain relaxation of epitaxial IV-VI/Si(111) structures on multiple temperature cycling to cryogenic temperatures
pp. 1186-1189(4)
Authors: Zogg H.; Teodoropol S.

A novel method for the study of strain relaxation in lattice-mismatched heteroepitaxy: ultra-high vacuum scanning tunneling microscopy combined with in situ reflection high-energy electron diffraction
pp. 1190-1195(6)
Authors: Frank N.; Springholz G.; Bauer G.

Characterization of molecular beam epitaxy grown CuInSe₂ on GaAs(001)
pp. 1196-1200(5)
Authors: Shioda R.; Okada Y.; Oyanagi H.; Niki S.; Yamada A.; Makita Y.

Heteroepitaxy and characterization of CuInSe₂ on GaAs(001)
pp. 1201-1205(5)
Authors: Niki S.; Makita Y.; Yamada A.; Hellman O.; Fons P.J.; Obara A.; Okada Y.; Shioda R.; Oyanagi H.; Kurafuji T.; Chichibu S.; Nakanishi H.

Stoichiometric control of CuInSe₂ thin films using a molecular beam epitaxy technique
pp. 1206-1210(5)
Authors: Tseng B.-H.; Lin S.-B.; Hsieh K.-C.; Hwang H.-L.

Blue luminescent SrGa₂S₄: Ce thin films grown by molecular beam epitaxy
pp. 1211-1214(4)
Authors: Tanaka K.; Inoue Y.; Okamoto S.; Kobayashi K.

The effect of growth temperature, -doping and barrier composition on mobilities in shallow AlGaAs&unknown;GaAs two-dimensional electron gases
pp. 1215-1219(5)
Authors: Holland M.C.; Skuras E.; Davies J.H.; Larkin I.A.; Long A.R.; Stanley C.R.

Enhancement of electron mobility by preventing pit formation at the In_0.52Al_0.48As/In_0.8Ga_0.2As heterointerface using an inserted In_0.53Ga_0.47As layer
pp. 1220-1224(5)
Authors: Nakayama T.; Miyamoto H.; Oishi E.; Samoto N.

InP-based heterostructure field-effect transistors with high-quality short-period (InAs)_3m/(GaAs)_1m superlattice channel layers
pp. 1225-1229(5)
Authors: Auer U.; Reuter R.; Heedt C.; Prost W.; Tegude F.J.

High G_m In_0.5Al_0.5As/In_0.5Ga_0.5As high electron mobility transistors grown lattice-mismatched on GaAs substrates
pp. 1230-1235(6)
Authors: Mishima T.; Higuchi K.; Mori M.; Kudo M.

Highly strained InGaAs layers on GaAs grown by molecular beam epitaxy for high electron mobility transistors
pp. 1236-1240(5)
Authors: Kudo M.; Mishima T.; Washima M.

Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures
pp. 1241-1245(5)
Authors: Kunzel H.; Bottcher J.; Hase A.; Strahle S.; Kohn E.

Effect of strained layer on GaAs power field effect transistor using low temperature buffer
pp. 1246-1251(6)
Authors: Sano S.; Heidarpour E.; Nanbu K.; Igarashi T.; Saito J.; Matsumoto T.

Molecular beam epitaxial growth of pseudomorphic InAlAs/InGaAs high electron mobility transistors with high cut-off frequencies
pp. 1252-1255(4)
Authors: Klein W.; Bohm G.; Heiss H.; Kraus S.; Xu D.; Semerad R.; Trankle G.; Weimann G.

Growth conditions and device performance of InGaAs/AlGaAs pseudomorphic inverted high electron mobility transistor
pp. 1256-1260(5)
Authors: Kawaguchi T.; Sato M.; Fujishiro H.I.; Nishi S.

Growth of high-quality InGaP and application for modulation-doped structure by molecular beam epitaxy with a GaP source
pp. 1261-1265(5)
Authors: Shitara T.; Eberl K.; Dickmann J.; Wolk C.

Electron distribution in modulation doped AlGaAs/GaAs single quantum wells and inverted modulation doped GaAs/AlGaAs heterostructures
pp. 1266-1269(4)
Authors: Suzuki K.; Saito K.; Saku T.; Sugimura A.; Horikoshi Y.; Yamada S.

Backgating and light sensitivity in GaAs metal-semiconductor field effect transistors
pp. 1270-1274(5)
Authors: Li R.-G.; Wang Z.-G.; Liang J.-B.; Ren G.-B.; Fan T.-W.; Lin L.-Y.

GaAs-based metal-insulator-semiconductor structures with low interface traps using molecular beam epitaxy and chemical vapor deposition
pp. 1275-1280(6)
Authors: Park D.G.; Tao M.; Reed J.; Suzue K.; Botchkarev A.E.; Fan Z.; Gao G.B.; Chey S.J.; Van Nostrand J.; Cahill D.G.; Morkoc H.

High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system
pp. 1281-1286(6)
Authors: Ando H.; Okamoto N.; Yamaura S.; Tomioka T.; Takahashi T.; Shigematsu H.; Kawano A.; Sasa S.; Fujii T.

Quantitative correlation between oxygen impurity and current gain of AlGaAs/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy
pp. 1287-1291(5)
Authors: Izumi S.; Sakai M.; Shimura T.; Tsugami M.; Hayafuji N.; Sonoda T.; Takamiya S.; Susaki W.; Mitsui S.

Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substrates
pp. 1292-1296(5)
Authors: Harmand J.C.; Praseuth J.P.; Idiart-Alhor E.; Palla R.; Pelouard J.L.; Quillec M.

Molecular beam epitaxy growth for a heavily-doped thin base layer of heterojunction bipolar transistors used for high-speed integrated circuits
pp. 1297-1301(5)
Authors: Iizuka N.; Tsuda K.; Nozu T.; Sugiyama T.; Kuriyama Y.; Obara M.

High sensitivity Hall elements made from Si-doped InAs on GaAs substrates by molecular beam epitaxy
pp. 1302-1306(5)
Authors: Iwabuchi T.; Ito T.; Yamamoto M.; Sako K.; Kanayama Y.; Nagase K.; Yoshida T.; Ichimori F.; Shibasaki I.

InAs deep quantum well structures and their application to Hall elements
pp. 1307-1312(6)
Authors: Kuze N.; Nagase K.; Muramatsu S.; Miya S.; Iwabuchi T.; Ichii A.; Shibasaki I.

Molecular beam epitaxy growth of an ultrahigh finesse microcavity
pp. 1313-1317(5)
Authors: Oesterle U.; Stanley R.P.; Houdre R.; Gailhanou M.; Ilegems M.

Integration of single/double vertical-cavity devices by mask molecular beam epitaxy
pp. 1318-1322(5)
Authors: Saito H.; Kosaka H.; Sugimoto Y.; Kasahara K.

Molecular beam epitaxy growth of lattice-matched AlGaInAsGaInAs multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing
pp. 1323-1327(5)
Authors: Kunzel H.; Bottcher J.; Hase A.; Hofsass V.; Kaden C.; Schweizer H.

Molecular-beam-epitaxy growth of strained Ga_1-x In_xAs/AlInAs/InP and application to 1.55 m multi-quantum-well lasers
pp. 1328-1332(5)
Authors: Nishikata K.; Shimizu H.; Hirayama Y.; Matsuda T.; Iwase F.; Irikawa M.

Reliable red-emitting laser diodes grown by solid source molecular beam epitaxy
pp. 1333-1337(5)
Authors: Takahashi K.; Takeoka T.; Kan Y.; Tsunoda A.; Tani K.; Hosoda M.; Matsui S.; Yamamoto S.

Growth of InGaAs/GaAs strained quantum wells on GaAs(111)B substrates and continuous wave operation of (111)-oriented InGaAs strained quantum well lasers
pp. 1338-1343(6)
Authors: Takeuchi T.; Muraki K.; Hanamaki Y.; Fukatsu S.; Yamada N.; Ogasawara N.; Mikoshiba N.; Shiraki Y.

Gas source molecular beam epitaxy growth of GaAs/InGaP superlattice as optical confinement layers in 0.98 m InGaAs/InGaP strained quantum well lasers
pp. 1344-1349(6)
Authors: Usami M.; Matsushima Y.; Takahashi Y.

Use of molecular beam epitaxy for high-power AlGaAs laser production
pp. 1350-1353(4)
Authors: Chaly V.P.; Demidov D.M.; Fokin G.A.; Karpov S.Y.; Myachin V.E.; Pogorelsky Y.V.; Rusanovich I.Y.; Shkurko A.P.; Ter-Martirosyan A.L.

2.78 m InGaAsSb/AlGaAsSb multiple quantum-well lasers with metastable InGaAsSb wells grown by molecular beam epitaxy
pp. 1354-1357(4)
Authors: Lee H.; York P.K.; Menna R.J.; Martinelli R.U.; Garbuzov D.; Narayan S.Y.

Selective molecular beam epitaxial growth for multifunction microwave monolithic and opto-electronic integrated circuits
pp. 1358-1362(5)
Authors: Pao Y.C.; Franklin J.; Shih C.

Monolithic integration of 850 nm quantum well modulators to very large scale integrated electronics on GaAs
pp. 1363-1367(5)
Authors: Cunningham J.E.; Goossen K.W.; Jan W.Y.; Walker J.A.; Pathak R.N.

InAs/GaAs short-period strained-layer superlattice modulators grown using advanced digital reflection high-energy electron diffraction techniques
pp. 1368-1374(7)
Authors: Hasenberg; Chen P.; Madhukar A.; Kost A.R.; Visher J.; Konkar A.

Molecular beam epitaxial growth, characterization and performance of high-detectivity GaInAsSb/GaSb PIN detectors operating at 2.0 to 2.6 m
pp. 1375-1378(4)
Authors: Li A.Z.; Zhong J.Q.; Zheng Y.L.; Wang J.X.; Ru G.P.; Bi W.G.; Qi M.

Enhanced electron transfer in real-space transfer devices using strained In_xGa_1-xAs (x = 0.15, 0.25) channel layers
pp. 1379-1383(5)
Authors: Lai J.-T.; Lee J.Y.-m.

Triangular-barrier optoelectronic switch by gas source molecular beam epitaxy
pp. 1384-1388(5)
Authors: Sakata H.; Utaka K.; Matsushima Y.

Resonant-tunneling triangular-barrier optoelectronic switch by gas source molecular beam epitaxy
pp. 1389-1394(6)
Authors: Sakata H.; Utaka K.; Matsushima Y.

Author index
pp. 1395-1415(21)

Subject index
pp. 1416-1420(5)