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Volume 149, Number 1, April 1995

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A study of surface cross-hatch and misfit dislocation structure in In0.15Ga0.85As/GaAs grown by chemical beam epitaxy
pp. 1-11(11)
Authors: Beanland R.; Joyce T.B.; Goodhew P.J.; Aindow M.; Kidd P.; Lourenco M.

Increase of overlayer critical thickness by off-angled substrates
pp. 12-16(5)
Authors: Sasaki A.; Noda S.; Tabuchi M.

Liquid phase epitaxial growth of elastically strained InxGa1-xP and InxGa1-xAsyP1-y solid solutions on GaAs substrates
pp. 17-22(6)
Authors: Bolkhovityanov Y.B.; Gilinsky A.M.; Nomerotsky N.V.; Trukhanov E.M.; Jaroshevich A.S.

p-Type nitrogen doped ZnSe epilayers by ionized cluster beam epitaxy
pp. 30-34(5)
Authors: Feng J.Y.; Zheng Y.; Zhang F.W.; Fan Y.D.

Vapor phase epitaxy of Hg1-xCdxTe on CdTe heteroepitaxial substrates
pp. 35-44(10)
Authors: Dieguez E.; Bernardi S.; Franzosi P.; Sochinskii N.V.; Kletskii S.V.

Effect of antimony-doping on the oxygen segregation coefficient in silicon crystal growth
pp. 59-63(5)
Authors: Huang X.; Terashima K.; Izunome K.; Kimura S.

Growth, morphology and superconducting properties of TmBa2Cu3O7-x single crystals
pp. 74-79(6)
Authors: Voronkova V.I.; Yanovskii V.K.; Zhukov A.A.; Klestov S.A.; Wolf T.; Seibt E.W.; Molchanov V.N.; Sorokina N.I.; Simonov V.I.

Preparation of KTa0.65Nb0.35O3 thin films by a sol-gel process
pp. 80-86(7)
Authors: Lu C.J.; Kuang A.X.; Huang G.Y.; Wang S.M.

Growth layers - I: Derivation of F-slices illustrated by sodium oxalate
pp. 96-106(11)
Authors: Strom C.S.; Grimbergen R.F.P.; Bennema P.; Hiralal I.D.K.; Koenders B.G.

Growth layers - II: Comparison of theoretical and experimental morphology of sodium oxalate
pp. 107-112(6)
Authors: Strom C.S.; Grimbergen R.F.P.; Bennema P.; Hiralal I.D.K.; Koenders B.G.

Impurity effect of chromium(III) on the growth and dissolution rates of potassium sulfate crystals
pp. 113-119(7)
Authors: Kubota N.; Fukazawa J.; Yashiro H.; Mullin J.W.

Kinetic self-stabilization of a stepped interface: Growth into a supercooled melt
pp. 120-130(11)
Authors: Coriell S.R.; Murray B.T.; Chernov A.A.

Growth of GaAs by molecular-beam epitaxy using trisdimethylaminoarsine
pp. 143-146(4)
Authors: Goto S.; Nomura Y.; Morishita Y.; Katayama Y.; Ohno H.

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