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Publisher: Elsevier

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Volume 148, Number 1, February 1995

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Characteristics of carbon doped InGaAs using carbontetrabromide by metalorganic molecular beam epitaxy
pp. 1-7(7)
Authors: Hamm, R.A.; Chandrasekhar, S.; Lunardi, L.; Geva, M.

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Sublinear impurity solubility in indium phosphide and gallium arsenide epitaxial layers
pp. 17-24(8)
Authors: Evtimova, S.; Amaudov, B.; Yanchev, I.; Arnaudov, B.

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Elaboration and characterization of InAsSb grown on GaSb and GaAs substrates
pp. 25-30(6)
Authors: Giani, A.; Podlecki, J.; Pascal-delannoy, F.; Bougnot, G.; Gouskov, L.; Catinaud, C.

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Characterization of beryllium-doped molecular beam epitaxial grown GaAs by photoluminescence
pp. 35-40(6)
Authors: Zhang, D.H.; Radhakrishnan, K.; Yoon, S.F.

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Influence of mercury pressure on liquidus temperature and composition of liquid phase epitaxial (Hg,Cd) Te
pp. 41-48(8)
Authors: Li, B.; Chu, J.H.; Cheng, X.Q.; Liu, K.; Chao, J.Y.; Tang, D.Y.

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Thermochemical model of physical vapor transport of cadmium-zinc telluride
pp. 49-55(7)
Authors: Palosz, W.; Lehoczky, S.L.; Szofran, F.R.

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Experimental studies on mass transport of cadmium-zinc telluride by physical vapor transport
pp. 56-62(7)
Authors: Palosz, W.; Lehoczky, S.L.; Szofran, F.R.

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Detection of ammonia, phosphine, and arsine gases by reversible modulation of cadmium selenide photoluminescence intensity
pp. 63-69(7)
Authors: Ellis, A.B.; Winder, E.J.; Moore, D.E.; Neu, D.R.; Kuech, T.F.; Geisz, J.F.

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Oxygen transport analysis in Czochralski silicon melt by considering the oxygen evaporation from the melt surface
pp. 70-78(9)
Authors: Togawa, S.; Huang, X.; Izunome, K.; Terashima, K.; Kimura, S.

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Modeling and identification of the liquid encapsulated Czochralski GaAs process for control
pp. 79-95(17)
Authors: Looze, D.P.; Azad, F.; Bernstein, B.; Collins, T.

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Theoretical study on the direct reaction between AsH3 and surface-adsorbed GaCl
pp. 96-105(10)
Authors: Mochizuki, Y.; Usui, A.; Handa, S.; Takada, T.

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Growth of 1212 phase Pb-Sr-Y-Ca-Cu-O single crystals
pp. 106-109(4)
Authors: Jin, H.; Chen, Z.J.; Cao, L.Z.; Zhou, G.E.; Mao, Z.W.

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Effect of boron incorporation on the lattice parameter and texture of diamond films deposited by chemical vapour deposition on silicon
pp. 110-115(6)
Authors: Chateigner, D.; Brunet, F.; Germi, P.; Pernet, M.; deneuville, A.; Gheeraert, E.; Gonon, P.

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Reduction of etch pits in heteroepitaxial growth of 3C-SiC on silicon
pp. 116-124(9)
Authors: Tin, C.C.; Hu, R.; Coston, R.L.; Park, J.

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Growth mode characterisation of CaF2, grown on vicinal Si(111) substrates by molecular beam epitaxy
pp. 133-139(7)
Authors: Mathet, V.; Olivier, J.; Galtier, P.; Nguyen-van-Dau, F.

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Growth of Cr4+-rich, chromium-doped forsterite single crystals by the floating zone method
pp. 140-147(8)
Authors: Dieckmann, R.; Higuchi, M.; Geray, R.F.; Park, D.G.; Burlitch, J.M.; Barber, D.B.; Pollock, C.R.

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Phase inhomogeneity of Pb2MoO5 single crystals
pp. 148-154(7)
Authors: Nihtianova, D.D.; Angelova, S.S.; Djonev, L.K.; Zheleva, T.S.; Tsukeva, E.A.; Petrov, K.P.

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Mathematical simulation of transport processes in modern sputter-deposition techniques of thin films
pp. 155-164(10)
Authors: Makarov, Y.N.; Fursenko, A.A.; Galjukov, A.O.; Lutovinov, D.S.; Ramm, M.S.

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A contribution to the kinetics of  -> αm transformation in Fe
pp. 165-171(7)
Authors: Bordone, E.E.; Caretti, J.C.

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Nonequilibrium partitioning during rapid solidification of Si?As alloys
pp. 172-182(11)
Authors: Aziz, M.J.; Kittl, J.A.; Brunco, D.P.; Thompson, M.O.

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Crystal growth of CuFeO2 by the floating-zone method
pp. 189-192(4)
Authors: Zhao T.-R.; Hasegawa, M.; Koike, M.; Takei, H.

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Flux growth of yttrium ortho-vanadate crystals
pp. 193-196(4)
Authors: Katsumata, T.; Takashima, H.; Ozawa, H.; Matsuura, K.; Nobe, Y.

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The effect of high-pressure gases on the solubility and crystallization of L-isoleucine
pp. 197-200(4)
Authors: Rousseau, R.W.; Teja, A.S.; Furuta, S.

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Surface observations of synthetic hydroxyapatite single crystal by atomic force microscopy
pp. 201-206(6)
Authors: Onuma, K.; Kameyama, T.; Ito, A.; Tateishi, T.

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Top-seeded growth of Nd:YAl3(BO3)4 from high temperature solution
pp. 207-210(4)
Authors: Chung, S.J.; Jung, S.T.; Choi, D.Y.; Kang, J.K.

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